Growth method of germanium-doped SiC body single-crystal material

A single crystal material and growth method technology, which is applied in the growth of polycrystalline materials, single crystal growth, single crystal growth, etc., can solve the problem of the inability to obtain germanium-doped SiC bulk single crystal materials, the limited implantation depth of ion implantation, and the inability to obtain thick It can reduce the defects and internal stress, reduce the stress, and reduce the single crystal defects.

Inactive Publication Date: 2016-05-11
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In recent years, a variety of techniques such as ion implantation and chemical vapor deposition (CVD) have achieved the goal of SiC doping germanium, but they all have different defects, so that it is impossible to obtain a real germanium-doped SiC bulk single crystal material.
The ion implantation method has limited implantation depth and serious damage to the atomic structure of the implanted layer; the CVD method can only epitaxially layer a thin film material, the growth rate is slow, and thick bulk materials cannot be obtained.

Method used

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  • Growth method of germanium-doped SiC body single-crystal material

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Embodiment 1

[0047] A method for growing a germanium-doped SiC bulk single crystal material, the growth steps are as follows:

[0048](1) Adjust the relative position of the graphite crucible and the induction coil so that the bottom of the graphite crucible is at the center of the induction coil, so that the top of the graphite crucible obtains a flat temperature field;

[0049] (2) Place the SiC powder source in the graphite crucible, fix the 2-inch 4H-SiC seed crystal on the top of the graphite crucible, cover the crucible lid and place it in the growth chamber of the single crystal growth furnace, and use low vacuum conditions to remove water and oxygen and other harmful impurities.

[0050] (3) Vacuumize the growth chamber of the single crystal growth furnace to make the vacuum degree reach 10 -5 Pa, the growth chamber is heated by induction heating for crystal growth, and the temperature of the top of the growth chamber is measured at the same time, and the temperature of the top is...

Embodiment 2

[0056] A kind of growth method of germanium-doped SiC bulk single crystal material, with embodiment 1, difference is:

[0057] In step (2), the seed crystal used is a 2-inch 6H-SiC seed crystal, so the grown crystal is a 2-inch 6H-SiC single crystal;

[0058] In step (3), the vacuum degree of the growth chamber is 10 -2 Pa, the top temperature is controlled at 2200°C, the axial temperature gradient is controlled at 30°C / cm, the growth pressure is 70mbar, the nucleation rate is 100μm / h, the crystal growth time is 80h, and the argon flow rate is 30sccm.

[0059] In step (5), the total amount of pure metal germanium powder is 10% of the weight of the SiC powder source, and the mass ratio of the dopant in the high temperature zone and the low temperature zone is 5:1.

[0060] In step (6), the cooling rate is controlled at 0.5°C / min.

[0061] The germanium-doped SiC single crystal grown in this embodiment has no defects such as germanium drop voids, small internal stress in the c...

Embodiment 3

[0063] A kind of growth method of germanium-doped SiC bulk single crystal material, with embodiment 1, difference is:

[0064] In step (2), the seed crystal used is a 3-inch 4H-SiC seed crystal, so the grown crystal is a 3-inch 4H-SiC single crystal;

[0065] In step (3), the vacuum degree of the growth chamber is 10 -3 Pa, the top temperature is controlled at 2000°C, the axial temperature gradient is controlled at 10°C / cm, the growth pressure is 50mbar, the nucleation rate is 50μm / h, the crystal growth time is 60h, and the argon flow rate is 20sccm.

[0066] In step (5), the total amount of pure metal germanium powder is 0.5% by weight of the SiC powder source, and the mass ratio of the dopant in the high temperature zone and the low temperature zone is 2:1.

[0067] In step (6), the cooling rate is controlled at 0.4°C / min.

[0068] The germanium-doped SiC single crystal grown in this embodiment has no defects such as germanium drop voids, small internal stress in the cryst...

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Abstract

The invention provides a growth method of a germanium-doped SiC body single-crystal material. The method adopts a sublimation method to make germanium-doped single crystals grow in a high-temperature single-crystal growth furnace and comprises the specific growth steps that the positions of high and low temperature zones are determined according to the shape of a residual material left at the bottom of the inside of a crucible after crystal growth; a dopant is put at the corresponding positions of the high and low temperature zones respectively to make the crystals grow; cooling is performed to reach room temperature, and high-quality germanium-doped SiC single crystals are obtained. The method enables the germanium element to be put in the high and low temperature zones respectively according to the temperature field distribution characteristics of induction heating, achieves uniform doping in the whole crystal growth process, controls the vapor pressure of the germanium at a preliminary growth stage, prevents germanium atom agglomeration on the growth face and achieves uniform doping in the radial and axial directions. The crystal defects and internal stress are reduced. Obtained single-crystal defects are few, the single-crystal quality is high, and the stress is small.

Description

technical field [0001] The invention relates to a growth method of a high-quality germanium-doped SiC bulk single crystal material, belonging to the technical field of artificial crystal materials. Background technique [0002] As the third-generation semiconductor material, silicon carbide (SiC) single crystal material has the characteristics of wide band gap, high critical breakdown electric field, high thermal conductivity, low dielectric constant, high carrier saturation concentration, etc., and has become a high temperature resistant, high power It is the preferred material for semiconductor devices with high pressure resistance and radiation resistance, which can meet the new requirements of modern electronic devices for high temperature, high frequency, high voltage, high power and radiation resistance. It is one of the most promising materials in the field of semiconductor materials at present. It is used in lighting, aviation, aerospace exploration, nuclear energy e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/02
CPCC30B29/36C30B23/02
Inventor 陈秀芳张福生徐现刚胡小波
Owner SHANDONG UNIV
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