Silicon-based solar cell and its preparation method
A solar cell and silicon-based technology, applied in the field of solar cells, can solve the problems of high input cost and complex preparation process, and achieve the effects of low equipment investment cost, simple preparation process and reduced parasitic absorption
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[0046] The method for preparing a silicon-based solar cell provided by the present invention, when an n-type silicon wafer 11 is used as a substrate, comprises the following steps: performing texture cleaning or polishing on the n-type silicon wafer 11; The first passivation layer 21; the hole transport layer 31 is prepared on the side of the first passivation layer 21 away from the n-type silicon wafer 11; the material of the hole transport layer 31 is selected from cuprous iodide, cuprous chloride, One or both of cuprous bromide, nickel oxide, cobalt oxide, vanadium oxide, tungsten oxide, and molybdenum oxide are used to prepare the positive electrode 50 connected to the hole transport layer 31; to prepare the negative electrode 60 connected to the n-type silicon wafer 11 .
[0047] Preferably, the preparation method comprises the following steps: performing texturing cleaning or polishing on the n-type silicon wafer 11; preparing a first passivation layer 21 on one side of ...
Embodiment 1
[0057] see figure 2 As shown, in this embodiment, the n-type silicon wafer 11 is used as the substrate, and the n-type silicon wafer 11 is subjected to texturing treatment, which can be sequentially cleaned by organic solvent acetone, absolute ethanol, deionized water, silicon wafer standard RCA, and hydrogen fluoride. Acid and deionized water treatment to remove impurities and oxide layers on the surface of the silicon wafer; prepare hydrogenated amorphous silicon layers with a thickness of 5-7 nm as the first passivation layer 21 and the second passivation layer by PEVCD method on both sides of the n-type silicon wafer 11. The second passivation layer 22'; on the side of the first passivation layer 21 far away from the n-type silicon wafer 11, a nickel oxide layer with a thickness of 20 nm is prepared as a hole transport layer by spin-coating and heating at a speed of 3500 r / s by sol-gel method 31. On the side of the second passivation layer 22 far away from the n-type sili...
Embodiment 2
[0060] Solar cells are prepared in the same manner as in Example 1, the difference being that the side of the n-type silicon is irradiated with ultraviolet ozone, and a layer of 1.5nm ultra-thin silicon dioxide is grown as the second passivation layer 22, and the first passivation layer 21 is far away from the n-type silicon. One side of type silicon wafer 11 is thermally evaporated to The rate of evaporation is 60nm, and the conductivity is 80(Ω·cm) -1 Cuprous bromide is used as the hole transport layer 31. On the side of the second passivation layer 22 away from the n-type silicon wafer 11, it is evaporated by an electron beam at a voltage of 9KV to A 2nm hafnium oxide electron transport layer 41 was grown at a rate of 2000 Å; a solar cell A2 was produced.
[0061] Solar cell A3 was tested in the same manner as in Example 1, and the results are shown in Table 1.
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