NiO/ZnO nano-rod based heterojunction diode and preparation method thereof

A nanorod and diode technology, applied in the field of semiconductor photodetection, can solve the problems of high temperature and expensive production

Inactive Publication Date: 2017-05-31
上海芯石微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Metal oxide semiconductors have a high potential in the production of new-generation electronic devices, optoelectronic devices and photovoltaic devices. Among them, ZnO has a good Carrier limitation, wide forbidden band width and high light transmittance in the regulatory region have attracted great attention. These new properties make the material have great potential in detectors, electronics industry, ultraviolet detection, solar cells, and photohydrolysis. In addition, low-temperature preparation, high crystallinity, and easy synthesis also make ZnO more economical in device fabrication. The p-n junction is the basic building block of many optoelectronic devices. However, due to the oxide-based homojunction in The low solubility in dopants and the self-compensation effect in p-type oxides make the development of this structure still challenging, and one way to overcome this limitation is to grow heterojunctions, so people began to pay attention to using The different components of the two materials and their optimal properties form a p-n heterojunction. Among the p-type materials paired with ZnO, NiO is due to its 3.6eV band gap, stable electrochemical performance, high durability, and low cost. cost, making it an excellent pairing material. In the past, the methods used to make ZnO / NiO heterojunction devices, such as electron beam evaporation, thermal evaporation sputtering, molecular beam epitaxy, pulsed laser deposition, etc., mostly existed at relatively low temperatures. High, expensive to make and other issues

Method used

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  • NiO/ZnO nano-rod based heterojunction diode and preparation method thereof
  • NiO/ZnO nano-rod based heterojunction diode and preparation method thereof
  • NiO/ZnO nano-rod based heterojunction diode and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0021] The FTO substrate was submerged in soapy water for several minutes, then ultrasonically treated in acetone, ethanol, and deionized water for 30 minutes, and finally, the FTO substrate was dried at 90ᵒC.

[0022] Dissolve 0.4M zinc acetate in ethylene glycol and stir for 45 minutes. When the solution turns milky white, add a few drops of diethanolamine as a stabilizer until the solution becomes transparent again, then spin-coat the solution and place it on a hot plate Drying on the air for 10 minutes, where the rotation speed was 3000 rpm, and the drying temperature was 300ᵒC, respectively dissolved 0.1M hexamethylphosphoric acid triamide and zinc nitrate in deionized water, and stirred for 1 hour, then the two solutions were mixed, and Stir for 1 hour, immerse the substrate with the seed layer face down in the solution, and heat in the furnace for 3 hours at a heating temperature of 90ᵒC. After the reaction, wash the substrate covered with nanorods with deionized water ...

Embodiment 2

[0025] The FTO substrate was submerged in soapy water for several minutes, then ultrasonically treated in acetone, ethanol, and deionized water for 30 minutes, and finally, the FTO substrate was dried at 90ᵒC.

[0026] With a molar ratio of 1:1, 0.1 solution of monoethanolamine was dissolved in nickel acetate tetrahydrate in methanol, the solution was stirred at 90ᵒC for 5 hours, and the solution was spin-coated on the surface of the substrate on which ZnO nanorods were grown. The rotation speed is 3000rpm, the time is 30 seconds, and then the substrate is dried at 300ᵒC for 10 minutes. Finally, the sample is annealed at 550ᵒC for 2 hours, and the device is completed.

[0027] After the pure nanostructured NiO device was fabricated, it was tested for photoelectric properties, such as figure 1 As shown by the black dotted line in the middle, the light transmission of the device is above 80%, and the absorption edge is around 355nm, as shown in figure 2 , the device forms an o...

Embodiment 3

[0029] The FTO substrate was submerged in soapy water for several minutes, then ultrasonically treated in acetone, ethanol, and deionized water for 30 minutes, and finally, the FTO substrate was dried at 90ᵒC.

[0030] Dissolve 0.4M zinc acetate in ethylene glycol and stir for 45 minutes. When the solution turns milky white, add a few drops of diethanolamine as a stabilizer until the solution becomes transparent again, then spin-coat the solution and place it on a hot plate Drying on the air for 10 minutes, where the rotation speed was 3000 rpm, and the drying temperature was 300ᵒC, respectively dissolved 0.1M hexamethylphosphoric acid triamide and zinc nitrate in deionized water, and stirred for 1 hour, then the two solutions were mixed, and Stir for 1 hour, immerse the substrate with the seed layer face down in the solution, and heat in the furnace for 3 hours at a heating temperature of 90ᵒC. After the reaction, wash the substrate covered with nanorods with deionized water ...

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PUM

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Abstract

The invention aims to provide a preparation method of a NiO / ZnO nano-rod based heterojunction diode. According to the preparation method, FTO (fluorine-doped tin oxide) conductive glass is used as a substrate, and a method for sol-gel spin coating is adopted to obtain a ZnO nano-rod heterojunction diode with a NiO nano structure for surface modification. The preparation method is simple and feasible, can achieve film forming at a low temperature, has good film-forming property and good device performance, and has broad application prospects in the field of photoelectric devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetection, and in particular relates to a NiO / ZnO nanorod-based heterojunction diode and a preparation method thereof. Background technique [0002] Metal oxide semiconductors have a high potential in the production of new-generation electronic devices, optoelectronic devices and photovoltaic devices. Among them, ZnO has a good Carrier limitation, wide forbidden band width and high light transmittance in the regulatory region have attracted great attention. These new properties make the material have great potential in detectors, electronics industry, ultraviolet detection, solar cells, and photohydrolysis. In addition, low-temperature preparation, high crystallinity, and easy synthesis also make ZnO more economical in device fabrication. The p-n junction is the basic building block of many optoelectronic devices. However, due to the oxide-based homojunction in The low solubility in do...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/109
CPCH01L31/109H01L31/18Y02P70/50
Inventor 王国锋
Owner 上海芯石微电子有限公司
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