A kind of method for preparing three-dimensional structure electrode material of Al collector
A technology of electrode material and three-dimensional structure, which is applied in the field of preparation of electrode materials, can solve the problems of high interface resistance and small specific surface area, and achieve the effect of reducing interface resistance, large specific surface area and simple method
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specific Embodiment approach 1
[0021] Embodiment 1: This embodiment is a method for preparing an electrode material with a three-dimensional structure from an Al collector, which is specifically completed as follows:
[0022] 1. The Al collector is first ultrasonically cleaned with acetone solution as ultrasonic cleaning solution for 1 min to 5 min, and then with propanol solution as ultrasonic cleaning solution for 1 min to 5 min to obtain a clean Al substrate;
[0023] 2. The clean Al substrate is imprinted with a silicon template to obtain an imprinted Al substrate. The surface of the silicon template is uniformly distributed with nanopillars vertically and the height of the nanopillars is 150nm-250nm;
[0024] 3. Inject phosphoric acid electrolyte into the oxidation device, and then place the imprinted Al substrate as the anode in the oxidation device, using graphite rods as the counter electrode, adjusting the voltage to 100V~300V, and the anodic oxidation time being 30min~300min to obtain Anodized Al substra...
specific Embodiment approach 2
[0030] Embodiment 2: The difference between this embodiment and the specific embodiment is: the Al collector in step one is obtained according to the following steps:
[0031] ①. Use acetone solution, absolute ethanol and distilled water as the ultrasonic cleaning liquid for the Al base material respectively, and ultrasonically clean for 5 minutes in sequence. After cleaning, place it in a vacuum drying oven and dry at a temperature of 60°C to obtain cleaned Al. Base material
[0032] ②. Place the Al base material cleaned in step ① in a plasma chemical vapor deposition vacuum device. After evacuating, hydrogen gas is introduced at a flow rate of 20 sccm, and argon is introduced at a flow rate of 40 sccm. The pressure in the plasma chemical vapor deposition vacuum device is 200 Pa, and the temperature in the plasma chemical vapor deposition vacuum device is increased to 550°C under the conditions of a hydrogen gas flow rate of 20 sccm, an argon gas flow rate of 40 sccm and a pressur...
specific Embodiment approach 3
[0034] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the thickness of the Al collector described in step 1 is 5 μm-50 μm. Others are the same as the first or second embodiment.
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