Preparation and application of porous silicon nanowire-cadmium sulfide quantum dot composite photocatalytic material with core-shell structure

A technology of composite photocatalysis and core-shell structure, which is applied in the field of preparation of core-shell structure porous silicon nanowire-cadmium sulfide quantum dot composite photocatalytic materials, can solve the problems of low photocatalytic activity and easy surface oxidation, and achieves photocatalytic performance. The effect of high catalytic activity, high photocatalytic activity and catalytic efficiency, and simple preparation method

Inactive Publication Date: 2018-11-06
FUZHOU UNIV
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Problems solved by technology

In the field of photocatalysis, silicon nanowires are also widely used in the degradation of pollutants and the development of new energy sources, but single-component silicon nanowires also have defects such as low photocatalytic activity and easy surface oxidation.

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  • Preparation and application of porous silicon nanowire-cadmium sulfide quantum dot composite photocatalytic material with core-shell structure
  • Preparation and application of porous silicon nanowire-cadmium sulfide quantum dot composite photocatalytic material with core-shell structure
  • Preparation and application of porous silicon nanowire-cadmium sulfide quantum dot composite photocatalytic material with core-shell structure

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preparation example Construction

[0038] A method for preparing a core-shell structure porous silicon nanowire-cadmium sulfide quantum dot composite photocatalytic material, comprising the following steps:

[0039](1) After cutting the boron-doped silicon wafer into a specified size, perform ultrasonic impregnation with acetone, ethanol and deionized water in order to remove impurities on the surface of the boron-doped silicon wafer, and then use a volume mixing ratio of 3: After washing the surface with a mixture of concentrated sulfuric acid and hydrogen peroxide in 1, wash it with deionized water, and then soak the boron-doped silicon wafer in a hydrofluoric acid solution with a mass concentration of 5% to remove its surface adhesion. oxide, and then put it into a mixed solution with a concentration of 0.01mol / L silver nitrate and a concentration of 4mol / L hydrofluoric acid and stir to make the surface of the boron-doped silicon wafer adhere to Ag nanoparticles, then take it out and use it After washing wit...

Embodiment 1

[0050] (1) The cut silicon wafer (10mm×20mm×0.3mm) is ultrasonically treated with acetone, ethanol and deionized water in sequence, then soaked in a 3:1 mixed solution of concentrated sulfuric acid and hydrogen peroxide for washing, and then taken out for use Rinse it repeatedly with deionized water, and then soak the cleaned silicon wafer in AgNO 3 (0.01mol / L) and HF (4mol / L)) solution for 1min to make the surface loaded with Ag particles, then put it into deionized water to suck out the excess Ag ions, and then place the silicon wafer deposited with Ag nanoparticles on HF and H 2 o 2 Etching treatment in the mixed solution for 1h, after the treatment, soak it in concentrated HNO 3 In order to remove residual Ag particles, it was taken out and rinsed with deionized water and 5% HF in sequence, and finally dried with nitrogen to obtain nanowires.

[0051] (2) Soak the silicon nanowire sheet in 50mL of deionized water, then add 2mL of BPEI solution (86mg / mL), and pass throug...

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Abstract

The invention discloses preparation and application of a porous silicon nanowire-cadmium sulfide quantum dot composite photocatalytic material with a core-shell structure. The preparation comprises the following steps of taking boron-doped silicon wafer, cadmium chloride, sodium sulfate nonahydrate, thioglycollic acid and dendritic polyethyleneimine as raw materials, obtaining a SiNWs@CdS composite material with a core-shell structure through the methods of metal-assisted chemical etching, reflux condensation and electrostatic self-assembly. The prepared SiNWs@CdS composite photocatalytic material has a good one-dimensional core-shell structure and remarkable visible-light response characteristics, the photocatalytic reduction of paranitroaniline and the photocatalytic decomposition of water for hydrogen production can be performed under visible light, the preparation method of the catalyst is simple, and the catalyst is easy to separate and recycle after reaction, rich in raw materials, low in price and environmentally friendly.

Description

technical field [0001] The invention belongs to the field of material technology, and in particular relates to the preparation and application of a core-shell structure porous silicon nanowire-cadmium sulfide quantum dot composite photocatalytic material, which can be used for photocatalytic reduction of p-nitroaniline and photocatalytic decomposition of aquatic products under visible light. hydrogen. Background technique [0002] With the continuous development of society, the demand for energy and environmental damage are increasing. How to solve these two problems has become a major research topic in today's society. Semiconductor photocatalysis technology is a green technology that uses natural sunlight as the driving force to carry out a series of important chemical reactions, and has the advantages of economy, simple reaction conditions and no secondary pollution. It is considered to fundamentally solve global energy and environmental problems. one of the ideal ways. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24C07C209/36C07C211/51C01B3/04C02F1/30C02F101/38
CPCB01J27/24C01B3/042C01B2203/0277C01B2203/1041C02F1/30C02F2101/38C02F2305/10C07C209/36C07C211/51Y02E60/36
Inventor 徐艺军林新唐紫蓉
Owner FUZHOU UNIV
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