Micro-through-hole Cu-based CVD diamond heat sink sheet and preparation method thereof

A technology of micro-vias and diamonds, which is applied in the field of micro-vias Cu-based CVD diamond heat sink and its preparation, can solve the problems of damage to electronic components and large thermal expansion coefficients, and achieve improved adhesion, excellent heat dissipation performance, The effect of increasing the nucleation density

Active Publication Date: 2020-01-14
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large thermal expansion coefficient of Ag, Cu, Al and other traditional heat dissipation materials for electronic packaging, thermal expansion after heating is easy to ca...

Method used

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  • Micro-through-hole Cu-based CVD diamond heat sink sheet and preparation method thereof
  • Micro-through-hole Cu-based CVD diamond heat sink sheet and preparation method thereof
  • Micro-through-hole Cu-based CVD diamond heat sink sheet and preparation method thereof

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preparation example Construction

[0053] A kind of preparation method of Cu base CVD diamond heat sink of the present invention, comprises the following steps:

[0054] S1, cleaning the Cu substrate surface;

[0055] see figure 2 , the purity of 99.99% to 99.999%, the oxygen-free copper substrate wire cutting diameter of 10 to 20mm into 0.5 to 1mm copper sheet as the Cu substrate.

[0056] The Cu substrate is washed with hydrochloric acid solution, acetone, alcohol, and deionized water in sequence for 3 to 5 minutes to remove the oxide film and organic matter on the surface of the Cu substrate, and then dried with nitrogen gas.

[0057] S2. Evaporation on the surface of the Cu substrate forms a carbide metal transition layer to improve the bonding force between the Cu substrate and the diamond.

[0058] Main process parameters: sputtering power 80~100W, air pressure 1.0~1.5Pa, temperature 300~400℃, Ar gas flow 20~30sccm, time 10~15min; metal transition layer materials include tungsten, molybdenum, titanium,...

Embodiment 1

[0073] S1. Cut the oxygen-free copper matrix with a purity of 99.99% and a diameter of 10mm into 0.5mm copper sheets as the Cu substrate, and then use hydrochloric acid solution, acetone, alcohol, and deionized water to clean the Cu substrate for 3 minutes to remove the oxide film and Cu. The organic matters on the surface of the substrate are blown dry with nitrogen;

[0074] S2. Control the sputtering power to 80W, air pressure to 1.0Pa, temperature to 300°C, Ar gas flow to 20sccm, time to 10min; metal transition layer materials include tungsten, molybdenum, titanium, iron, chromium, nickel, cobalt, hafnium, zirconium, neodymium, vanadium , tantalum, yttrium or aluminum, etc., are vapor-deposited on the surface of the Cu substrate to form a carbide metal transition layer;

[0075] S3. Electrostatically assembling diamond nanoparticles on the surface of the transition metal to increase the nucleation density of diamond on the metal transition layer. The diamond nanoparticles ...

Embodiment 2

[0083] S1. Cut the oxygen-free copper matrix with a purity of 99.99% and a diameter of 14mm into 0.6mm copper sheets as the Cu substrate, and then use hydrochloric acid solution, acetone, alcohol, and deionized water to clean the Cu substrate for 4 minutes to remove the oxide film and Cu. The organic matters on the surface of the substrate are blown dry with nitrogen;

[0084] S2. Control sputtering power 80-100W, air pressure 1.2Pa, temperature 340℃, Ar gas flow 24sccm, time 12min; metal transition layer materials include tungsten, molybdenum, titanium, iron, chromium, nickel, cobalt, hafnium, zirconium, neodymium , vanadium, tantalum, yttrium or aluminum, etc., are vapor-deposited on the surface of the Cu substrate to form a carbide metal transition layer;

[0085] S3. Electrostatically assembling diamond nanoparticles on the surface of the transition metal to increase the nucleation density of diamond on the metal transition layer. The diamond nanoparticles are spherical an...

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Abstract

The invention discloses a micro-through-hole Cu-based CVD diamond heat sink sheet and a preparation method thereof. The micro-through-hole Cu-based CVD diamond heat sink comprises a Cu substrate, a metal transition layer and a CVD diamond film which are arranged in order from bottom to top, and micro-through-holes with the diameter ranging from 0.3 mm to 0.5 mm and the spacing ranging from 2 mm to3 mm are distributed in the Cu substrate in an array mode; and diamond nanoparticles are electrostatically assembled on the surface of the metal transition layer. The heat dissipation effect of the heat sink sheet is better than that of traditional heat sink sheets such as Ag, Cu and Al, and the adhesion between a diamond film and a Cu metal substrate and the nucleation density of diamond are improved; and the heat dissipation performance of the micro-channel Cu-based diamond heat sink sheet is better.

Description

technical field [0001] The invention belongs to the technical field of diamond material application, and in particular relates to a Cu-based CVD diamond heat sink with micro-through holes and a preparation method thereof. Background technique [0002] With the rapid development of microelectronics integration technology and high-density assembly technology of air-core printed boards, the design and production of electronic components and electronic systems continue to develop in the direction of miniaturization, light weight, compactness, and high efficiency. The power density of electronic components and electronic systems is getting higher and higher, resulting in a large amount of heat generated during operation. If the heat is not removed in time, it will seriously affect the working stability, safety and reliability of electronic components and electronic systems. Therefore, , the problem of heat dissipation has become a key issue to be solved urgently in the field of e...

Claims

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Application Information

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IPC IPC(8): H01L23/373C23C28/04C23C14/24C23C14/06C23C16/27C23C16/02B81C1/00
CPCB81C1/00349B81C1/0069C23C14/0021C23C14/0635C23C14/24C23C16/0272C23C16/27C23C28/04H01L23/3732H01L23/3733H01L23/3736
Inventor 王进军
Owner SHAANXI UNIV OF SCI & TECH
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