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Preparation method for in-situ growth of boron carbide photocathode material on carbon substrate

An in-situ growth and cathode material technology, applied in the field of materials, can solve the problem of high energy consumption, and achieve the effects of simple preparation process, uniform shape, important scientific significance and application value

Active Publication Date: 2020-12-29
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, currently the industrial preparation of B 4 The main method of C is the carbothermal reduction method, but this method has high energy consumption and can only produce B with a larger particle size. 4 C powder

Method used

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  • Preparation method for in-situ growth of boron carbide photocathode material on carbon substrate
  • Preparation method for in-situ growth of boron carbide photocathode material on carbon substrate
  • Preparation method for in-situ growth of boron carbide photocathode material on carbon substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Preparation of Carbon Fiber Substrate Boron Carbide Photocathode Material

[0029] (1) Preparation of electroplating bright nickel solution: Weigh 42.0g of nickel sulfate hexahydrate, 6.0g of nickel chloride hexahydrate, 5.0g of boron oxide, and 1.0g of sodium lauryl sulfate, add them to the volumetric flask in turn, add ultrapure Dilute to volume with water, dissolve by ultrasonic vibration for 3 hours, add 10 drops of 36% hydrochloric acid after no visible solid in the bottle, dilute to volume again, and stir magnetically for 12 hours.

[0030] (2) Elemental nickel electroplating: take 5 pieces of carbon fiber cloth of 0.5×1.2 cm, soak them in the bright nickel electroplating solution mentioned above for 3 hours. A three-electrode system was adopted, the carbon substrate was used as the working electrode, the calomel electrode was used as the reference electrode, and the platinum electrode was used as the counter electrode. The charge transfer number is the only refe...

Embodiment 2

[0036] Preparation of Carbon Fiber Substrate Boron Carbide Photocathode Material

[0037] (1) Weigh 0.231g of Fe3O4 micropowder, add it to 100ml of ethanol, seal it and vibrate ultrasonically for 3 hours, take it out after the vibrating dispersion is complete.

[0038] (2) Use a pipette gun to evenly drop the dispersed iron ferric oxide-ethanol dispersion on a 0.5×1.2 cm carbon fiber cloth. After dropping 5 drops, place the sample in a drying oven to dry for 3 hours.

[0039](3) Place the carbon fiber cloth obtained in (2) on two thin tungsten wires, put it into a crucible covered with boron oxide at the bottom, and then put it into a vertical tube furnace, set the heating rate to 10°C / min, After raising the temperature to 600°C, change it to 5°C / min, heat it to 1450°C and keep it for 10 hours, then set the cooling rate to 5°C / min, and then cool it down to room temperature naturally after dropping to 600°C, that is, the following Boron carbide products based on carbon fiber c...

Embodiment 3

[0043] Preparation of Carbon Fiber Substrate Boron Carbide Photocathode Material

[0044] (1) Preparation of electroplating cobalt solution: Weigh 90.0g of cobalt sulfate, 12.0g of cobalt chloride, 10.0g of boric acid, 2.0ml of formaldehyde, 0.1g of cadmium sulfate, and 0.3g of saccharin, add them to the volumetric flask in turn, and add ultrapure water Dilute to volume, ultrasonically shake and dissolve for 3 hours, and when there is no visible solid in the bottle, dilute to volume again, and stir magnetically for 12 hours.

[0045] (2) Electroplating cobalt simple substance: Take 5 pieces of carbon fiber cloth with a size of 0.5×1.2 cm and soak them in the above cobalt electroplating solution for 3 hours. A three-electrode system is adopted, the carbon substrate is the working electrode, the calomel electrode is the reference electrode, and the platinum electrode is the counter electrode. The three are completely immersed in the cobalt electroplating solution, the bias volta...

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Abstract

The invention discloses a preparation method for in-situ growth of a boron carbide photocathode material on a carbon substrate. According to the method, a standing carbon material is used as a substrate, transition metal is electrodeposited on the carbon substrate, the carbon substrate is catalyzed to react with boron oxide in argon, a boron carbide photocathode material grows on the carbon substrate in situ, and the transition metal is removed through acid pickling, so that the carbon-based boron carbide photocathode, namely C / B4C, is obtained. The photoelectrode material comprises a carbon substrate and boron carbide. The carbon-based boron carbide photoelectrode has good photoelectrochemical response and can be applied to the fields of multifunctional carbon-based material construction,photoelectrochemical sensor construction, photoelectrocatalytic water decomposition hydrogen production, photoelectrocatalytic degradation of organic pollutants and the like.

Description

technical field [0001] The invention belongs to the technical field of materials, in particular to a preparation method for in-situ growth of boron carbide photocathode materials on various standable carbon substrates. Background technique [0002] Carbon materials have been widely used in the fields of electrochemical energy conversion and storage due to their excellent stability, good electrical conductivity, and rich morphology. Multifunctional carbon materials not only have the excellent properties of carbon materials, but also have special properties such as good self-lubrication, sealing, softness, anisotropy, etc., so they are applied to cutting-edge technology fields such as aviation, military industry, medical treatment, and catalysis . [0003] Boron carbide (B 4 C) It has the characteristics of low density, high temperature resistance, high hardness, chemical corrosion resistance, high stability and good catalytic activity, and has good photoelectrochemical resp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/02C25D3/12
CPCH01J9/027C25D3/12
Inventor 刘冀锴温丽苹尚志超罗和安
Owner XIANGTAN UNIV