Copper-titanium corrosive liquid for integrated circuit and production process of copper-titanium corrosive liquid

An integrated circuit and etching solution technology, applied in the field of microelectronic chemical reagents, can solve problems such as unfavorable process production, operating environment pollution, environmental pollution, etc., and achieve the effects of increasing etching rate, increasing oxidation rate, and reducing unevenness

Active Publication Date: 2021-10-29
JIANGYIN RUNMA ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to increase the etching rate, fluorine ions are often added, but fluorine ions will corrode silicon devices under acidic conditions, which is very unfavorable to process production, causes certain pollution to the operating environment, and is not conducive to the health of operators. Without correct treatment, it will also cause serious pollution to the environment, and with the progress of the corrosion process, more copper ions and titanium ions enter the corrosion solution, resulting in more metal ions in the corrosion solution, which affects the stability of the corrosion solution properties, to affect the etching effect

Method used

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  • Copper-titanium corrosive liquid for integrated circuit and production process of copper-titanium corrosive liquid
  • Copper-titanium corrosive liquid for integrated circuit and production process of copper-titanium corrosive liquid
  • Copper-titanium corrosive liquid for integrated circuit and production process of copper-titanium corrosive liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] The sorbent is made by the following steps:

[0044] Step 1. Add 2.5mL of n-pentanol, 5.6mL of tetraethyl orthosilicate and 30mL of n-hexane into a three-necked flask, stir for 5min, then add 3.1g of cetyltrimethylammonium bromide, 0.6g of urea and 30mL of distilled water , after magnetically stirring for 40 minutes, transfer the reaction product to a polytetrafluoroethylene reactor, and place it in an oven at 120°C for 4 hours. Centrifuge at a speed of 15min for 15min, and dry the obtained precipitate in an oven at 60°C for 12h, and finally bake it in a muffle furnace at 550°C for 6h to obtain a mesoporous carrier;

[0045] Step 2. Add 0.2 mol of 2-pyridinecarbaldehyde into 100 mL of absolute ethanol, add 0.2 mol of 2-picolylamine under stirring conditions, stir for 2 hours at room temperature, add 0.37 mol of sodium borohydride, and stir for 3 hours After the reaction, filter, and cool the filtrate to 0°C, add a hydrochloric acid solution with a mass fraction of 37 t...

Embodiment 2

[0052] The sorbent is made by the following steps:

[0053] Step 1. Add 2.5mL of n-pentanol, 7.9mL of tetraethyl orthosilicate and 30mL of n-hexane into a three-necked flask, stir for 5min, then add 3.9g of cetyltrimethylammonium bromide, 0.6g of urea and 30mL of distilled water , after magnetically stirring for 40 minutes, transfer the reaction product to a polytetrafluoroethylene reactor, and place it in an oven at 120°C for 4 hours. Centrifuge at a speed of 15min for 15min, and dry the obtained precipitate in an oven at 60°C for 12h, and finally bake it in a muffle furnace at 550°C for 6h to obtain a mesoporous carrier;

[0054] Step 2. Add 0.2mol of 2-pyridinecarbaldehyde into 100mL of absolute ethanol, add 0.2mol of 2-picolylamine under stirring conditions, stir at room temperature for 2h, add 0.41mol of sodium borohydride, and stir for 3h , after the reaction, filter, and cool the filtrate to 0°C, add a hydrochloric acid solution with a mass fraction of 37 to adjust the...

Embodiment 3

[0067] A copper-titanium corrosion solution for integrated circuits, comprising the following raw materials in mass percentage: 10% of sulfuric acid, 5% of nitric acid, 28% of acetic acid, 2% of potassium persulfate, 2% of hydrogen peroxide, 0.05% of the adsorbent in Example 1, and the balance for pure water;

[0068] The production process of the copper-titanium etching solution for integrated circuits comprises the following steps:

[0069] First add the required pure water to the batching tank, add potassium persulfate and hydrogen peroxide under stirring, and stir for 2 hours at a speed of 100r / min; then add sulfuric acid, nitric acid, and acetic acid to the batching tank in turn, and stir for 2 hours at a speed of 60r / min to obtain a mixture Pass the mixture into the filter and filter for more than 2 times, then add the adsorbent of Example 1, stir at constant speed for 20min, and obtain the copper-titanium etching solution for integrated circuits.

[0070] Wherein, the ...

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PUM

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Abstract

The invention discloses a copper-titanium corrosive liquid for an integrated circuit, and belongs to the technical field of microelectronic chemical reagents. The copper-titanium corrosive liquid comprises, by mass, 10-19% of sulfuric acid, 5-8% of nitric acid, 28-33% of acetic acid, 2-5% of potassium persulfate, 2-4% of hydrogen peroxide, 0.05-0.1% of adsorbent and the balance pure water. The invention also discloses a production process of the corrosive liquid. The corrosion liquid is uniform in corrosion to a copper-titanium composite metal layer and stable in performance, due to the fact that the adsorbent is added, the corrosive liquid can be purified, the generation of waste corrosive liquid is reduced, the service life of the corrosive liquid is prolonged, the corrosive liquid does not contain fluorine, a silicon base material, silicon nitride and non-crystalline silicon cannot be corroded, meanwhile, the product yield, safety and environmental friendliness are considered, the risk of defects after reworking is reduced, and the production process can be widely applied to the fields of the preparation of integrated circuit industry, flat panel displays, color filters, touch panels, organic light-emitting diodes and the like.

Description

technical field [0001] The invention belongs to the technical field of microelectronic chemical reagents, and in particular relates to a copper-titanium corrosion solution for integrated circuits and a production process thereof. Background technique [0002] The existing copper / titanium metal thin film etching solution is usually hydrogen peroxide and other acid solutions, the copper / titanium metal is oxidized with hydrogen peroxide, and then the oxide is dissolved with the acid solution to achieve the purpose of etching. Although a hydrogen peroxide stabilizer is added, hydrogen peroxide is still unstable and easy to decompose, and copper ions have a catalytic effect on the decomposition of hydrogen peroxide, which will further accelerate the decomposition of hydrogen peroxide, so the copper-titanium laminated film etching process Unstable, while shortening the life of the etchant. In order to increase the etching rate, fluorine ions are often added, but fluorine ions wil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/26
Inventor 戈烨铭何珂汤晓春
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
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