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Preparation method and application method of silicon-containing rapidly-patterned block copolymer

A block copolymer and patterning technology, which is applied in the photolithographic process of patterned surface, optical mechanical equipment, instruments, etc., can solve problems such as thermal annealing, achieve high etching contrast, large difference in etching resistance, The effect of simple preparation method

Pending Publication Date: 2021-12-07
上海雅天微电纳刻材料科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Although the present invention can form nano-patterns with ultra-high resolution (3-10nm) for existing partial block copolymers used in photoresist, and some organic-inorganic block copolymer systems have higher etching contrast , but most block copolymer systems require a long time or high temperature thermal annealing in order to achieve a microphase separation equilibrium state, providing a class of ultra-high resolution, high etching contrast and fast at low temperature Self-assembled silicon-containing rapid patterning block copolymer containing silicon-directed self-assembly technology, and the preparation method of the silicon-containing rapid patterning block copolymer and its application as a composite patterning material

Method used

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  • Preparation method and application method of silicon-containing rapidly-patterned block copolymer
  • Preparation method and application method of silicon-containing rapidly-patterned block copolymer
  • Preparation method and application method of silicon-containing rapidly-patterned block copolymer

Examples

Experimental program
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Effect test

Embodiment 1

[0063] Synthesis of Styrene Derivative Monomer Containing POSS Side Chain

[0064]

[0065] Heptaisobutylaminopropyl POSS (NH2-POSS, 9.59 g, 10 mmol) was dissolved in dichloromethane (DCM, 50 mL), then 1-hydroxybenzotriazole (HOBT, 1.86 g, 10 mmol) was added, 4 - Vinylbenzoic acid (1.48g, 10mmol), N,N-diisopropylethylamine (3.10g, 20mmol), 1-(3-dimethylaminopropyl)-3-ethylcarbodiimide salt salt (EDCI, 1.86g, 10mmol). The reaction system was reacted at room temperature for 10 h, then dichloromethane (50 mL) was added for appropriate dilution, and distilled water (3×100 mL) was used to wash three times. After washing, put an appropriate amount of anhydrous magnesium sulfate into the organic phase to dry and remove water, and let it stand for 2-3 hours. After filtration, the solvent was removed by rotary evaporation to obtain 6.40 g of a white solid product (StNPOSS), with a yield of 64%.

Embodiment 2

[0067] PStNPOSS-b-PHFBMA silicon-containing fast patterned block copolymer and preparation method thereof

[0068]

[0069] In a dry 100mL polymerization tube, add 1H,1H-perfluorobutyl methacrylate (HFBMA, 9.17g, 34.20mmol), cyanoisopropyl dithiobenzoate (CPDB, 378.8mg, 1.71mmol ), azobisisobutyronitrile (AIBN, 14mg, 0.086mmol) and hexafluoroisopropanol (HFIP, 25mL). Freeze-thaw cycles were performed three times to remove oxygen in the reaction system, and the polymerization tube was placed in an oil bath at 70° C. to seal the tube for 8 h. After the reaction, the polymerization tube was quickly placed in liquid nitrogen to quench, and then an appropriate amount of HFIP was added to the polymerization tube for dilution. The diluted solution was dropped into a large amount of n-hexane, and the precipitate was suction-filtered, and this was repeated three times. The obtained product was vacuum-dried at room temperature for 24 h to obtain 4.40 g of a pink powdery solid. The...

Embodiment 3

[0078] Self-assembly performance test of silicon-containing fast patterned block copolymer S1.

[0079] Figure 4 Schematic diagram of thermal assembly annealing. Such as Figure 4As shown, the obtained silicon-containing rapid patterning block copolymer S1 was dissolved in toluene to obtain a solution with a concentration of 0.5% mass fraction, which was spin-coated on a clean silicon wafer by a spin coater (4000rpm / min, 1min), and then dried in a vacuum. The solvent was removed by drying in the oven under vacuum for 2 h. The silicon chip is baked on a hot plate at 120°C, quenched with a cold plate after rapid annealing, and the obtained sample is further measured by SEM (scanning electron microscope). SEM measurement results such as Figure 5 As shown, the scale bar is 100 nm.

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Abstract

The invention relates to the technical field of high polymer materials, and in particular, relates to a silicon-containing rapidly-patterned block copolymer which is highly controllable in assembly size and assembly morphology and small in PDI, a preparation method of the silicon-containing rapidly-patterned block copolymer and an application of the silicon-containing rapidly-patterned block copolymer as a composite patterned material. The invention designs and synthesizes a silicon-containing DSA rapidly-patterned block copolymer which has ultrahigh resolution and high etching contrast ratio and can be rapidly self-assembled at low temperature; the silicon-containing rapidly-patterned block copolymer can form a stable ultrahigh nano structure only through 1 min annealing at the temperature of 80 DEG C, and due to the existence of a silicon-containing component, the silicon-containing rapidly-patterned block copolymer also has relatively high etching resistance selectivity.

Description

technical field [0001] The invention relates to the technical field of polymer materials, in particular to a silicon-containing rapid patterning block copolymer with highly controllable assembly size and assembly morphology and a small PDI, and the preparation of the silicon-containing rapid patterning block copolymer Methods and applications as composite patterned materials. Background technique [0002] Integrated circuit (integrated circuit, IC) is one of the most critical technologies in the information age. From daily life to industrial production, all devices related to electronic computing are inseparable from chips. Only with advanced chips can personal computers become able to integrate more and more powerful functions, and mobile phones can enter the era of 3G and 4G. In the manufacture of integrated circuits, photolithography is an important key technology. The function of the chip can be continuously improved, which is inseparable from the development of photol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F293/00G03F7/075
CPCC08F293/00G03F7/0758
Inventor 邓海周家诺
Owner 上海雅天微电纳刻材料科技有限公司
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