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Anti-reflection coating composition containing self-crosslinking sulfydryl melamine polymer, and preparation method and pattern forming method of composition

A technology of mercaptomelamine and anti-reflection coating, which is applied in the direction of anti-reflection coating, coating, photoplate making process of patterned surface, etc., can solve the problems of high refractive index, extinction coefficient and etching rate, etc., Achieve the effect of stable coating performance and high refractive index

Active Publication Date: 2022-01-14
XIAMEN HENGKUN NEW MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the defects that the existing bottom anti-reflective coating composition using isocyanurate compounds as film-forming substances cannot have high refractive index, extinction coefficient and etching rate, and to provide a simultaneous Anti-reflective coating composition having high refractive index, extinction coefficient and etching rate, its preparation method and pattern forming method

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  • Anti-reflection coating composition containing self-crosslinking sulfydryl melamine polymer, and preparation method and pattern forming method of composition
  • Anti-reflection coating composition containing self-crosslinking sulfydryl melamine polymer, and preparation method and pattern forming method of composition
  • Anti-reflection coating composition containing self-crosslinking sulfydryl melamine polymer, and preparation method and pattern forming method of composition

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Effect test

preparation example Construction

[0061] The preparation method of the anti-reflection coating composition provided by the invention comprises uniformly mixing a self-crosslinkable mercaptomelamine polymer, an acid generator, an organic solvent and an optional surfactant. Wherein, the homogeneous mixing method and conditions can be conventional choices in the art, which are well known to those skilled in the art, and will not be repeated here.

[0062] The pattern forming method provided by the present invention comprises: coating the antireflection coating composition on the substrate and performing thermal curing to form an antireflection coating on the substrate; forming a photoresist layer on the antireflection coating; The photoresist layer is exposed and developed to form a photoresist pattern.

[0063] The substrate can be silicon, silicon dioxide or aluminum-alumina microelectronic wafers, gallium arsenide, silicon carbide, ceramic, quartz or copper substrates, and suitably used in liquid crystal displ...

preparation example 1

[0067] Preparation Example 1: Preparation of Prepolymer S1

[0068] Add 15g (28.5mmol) tris(1,3-oxathiolane-2-thionyl-5-methyl) isocyanurate, 10.5g (71.25mmol) 1 in a 250mL round bottom flask, 8-Diamino-3,6-dioxa-octane and 167.73g of dimethylformamide (DMF), stirred and reacted at room temperature for 24h, then added the polymer solution dropwise to the In a large amount of mixed solution of isopropanol and n-heptane (volume ratio of isopropanol and n-heptane is 7:3), the solid polymer was obtained by filtration, and vacuum-dried at 40°C for 3 hours to obtain prepolymer S1, which has the formula (4) The structure shown, the weight average molecular weight Mw is 4052, and the dispersion index PDI is 1.75.

[0069]

[0070] R in formula (4) 1 and R in formula (1) 1 Same definition.

preparation example 2

[0071] Preparation Example 2: Preparation of self-crosslinkable mercaptomelamine polymer J1

[0072] Add 60 g of 2-hydroxyisobutyrate (HBM) to the prepolymer S140 g obtained in Preparation Example 1 and stir until completely dissolved to obtain a prepolymer solution, and then add the prepolymer solution to a 500 mL three-necked flask under nitrogen gas , then heated to 45 ° C, then added 9.8g (25.1mmol) hexamethoxymethylmelamine (dissolved with HBM into a solution with a solid content of 20%) and 0.48g (2.5mmol) pTSA (p-toluenesulfonic acid ), reacted for 2 hours under stirring at 45°C, then added 0.28g (2.75mmol) triethylamine to the reaction solution, and then added 180g of HBM solvent to dilute to obtain a polymer solution.

[0073] The above-mentioned polymer solution is added dropwise in the mixed solution of isopropanol and n-heptane (volume ratio of isopropanol and n-heptane 7:3) by volume ratio of 1:10, and the solid polymer is obtained by filtration, and then the soli...

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Abstract

The invention belongs to the field of semiconductor materials, and particularly relates to an anti-reflection coating composition containing a self-crosslinking sulfydryl melamine polymer, and a preparation method and a pattern forming method of the composition. The anti-reflection coating composition contains a self-crosslinking sulfydryl melamine polymer, an acid generator, an organic solvent and an optional surfactant. The coating formed by baking and curing the anti-reflection coating composition provided by the invention has high refractive index, extinction coefficient and excellent etching rate.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and in particular relates to an antireflection coating composition containing a self-crosslinkable mercaptomelamine polymer, a preparation method and a pattern forming method thereof. Background technique [0002] In semiconductor manufacturing, microfabrication has traditionally been achieved by photolithography of photoresists. Photoresists, also known as photoresists, are used to transfer images to substrates. After forming the coating of photoresist on the substrate, the photoresist layer is exposed through a photomask to a source of activating radiation. After exposure, a chemical modification reaction occurs on the photoresist layer, and the photomask has radiation-transmissive and opaque regions, so the pattern of the photomask is transferred to the photoresist coating. Thereafter, the photolithographic resist coating is developed to form a patterned image that can be selectively p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D179/04C09D5/00C08G73/06G03F7/004G03F7/09G03F7/00
CPCC09D179/04C09D5/006C08G73/0638C08G73/0644G03F7/004G03F7/091G03F7/00C08G2150/00
Inventor 曾成财王静
Owner XIAMEN HENGKUN NEW MATERIAL TECH