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Storage material without tellurium, preparation method and application

A storage material and memory technology, applied in the field of storage materials, can solve the problems that hinder the development and research of tellurium-containing phase change memory, the threat of semiconductor production line, memory data loss, etc., and achieve the effect of perfect data retention, superior performance and easy processing

Active Publication Date: 2010-01-20
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although Ge 2 Sb 2 Te 5 It has outstanding performance in terms of thermal stability and reading and writing speed, but it also faces severe problems: First, the crystallization temperature of the material is relatively low (about 165°C), although the Ge 2 Sb 2 Te 5 The memory data can be kept at 110°C for 10 years, but the memory still faces the risk of data loss at high temperatures; secondly, the tellurium in the material has a negative impact on the human body and the environment, which is incompatible with the current environmental protection policy advocated by the country; in addition Because of its low melting point and low vapor pressure, tellurium is easy to volatilize in the high-temperature preparation process. Its pollution to the semiconductor process is still unknown at present, and it poses a certain threat to the semiconductor production line, so it greatly limits and hinders Development and research of tellurium-containing phase change memory; finally, Ge-Sb-Te material is an alloy of three elements, each element has different chemical and physical properties, which brings inconvenience to subsequent processes such as microfabrication

Method used

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  • Storage material without tellurium, preparation method and application
  • Storage material without tellurium, preparation method and application
  • Storage material without tellurium, preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0022] 1. Prepare silicon-antimony thin films on thermally oxidized silicon substrates by magnetron sputtering co-sputtering method. The argon gas pressure during sputtering is 0.2Pa, and the power on the silicon target and the antimony target is 200 watts of radio frequency respectively. and DC 30 W, the thickness of the prepared film is 200 nm. Energy spectrum analysis shows that the composition of the material is Si 43 Sb 57 .

[0023] 2. Si will be obtained 43 Sb 57 The thin-film storage material was annealed for 5 minutes in a high-purity nitrogen atmosphere.

[0024] 3. Si after annealing 43 Sb 57 The material is tested for resistivity, and the test results are as follows: image 3 As shown, Si 43 Sb 57 When the material is annealed below 300°C, the resistivity does not drop but rises, but when the annealing temperature exceeds 350°C, the resistivity drops rapidly. Differential thermal analysis showed that Si 43 Sb 57 The crystallization temperature of the ma...

Embodiment 2

[0026] 1. Magnetron sputtering 100 nm of Au-doped Si on the substrate 16 Sb 82 Thin films, the specific conditions are: the power on the silicon target, the antimony target and the gold target is 100 watts of radio frequency, 30 watts of direct current and 20 watts of direct current respectively, and the argon gas pressure during sputtering is 1Pa.

[0027] 2. The crystallization temperature of the material tested by differential thermal analysis is 225°C.

[0028] 3. The comparison between the gold-doped material and the undoped material is that the crystallization temperature of the material is not much different, but the melting point drops a lot after doping, which is about 550°C, which reduces the energy required to melt it, that is, The power consumption of the storage device is reduced, but the storage device still has a good data retention capability.

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Abstract

This invention relates to a method for preparing a Te-free memory material, which is a Si-Sb mixture, SixSb100-x, wherein x is within 0-90, preferential 5-70. The Te-free memory material can be driven by electricity, laser pulse or electron beam. Te-free memory material with adjustable crystallization temperature, melting point and crystallization activation energy can be obtained by changing the ratio of the two compositions. The Te-free memory material has such advantages as high adjustability, strong data-memory ability, simple formula, simple process, no contamination to semiconductor devices, high processability, no pollution and wide applications, and is an ideal memory medium used in memories.

Description

technical field [0001] The invention relates to a storage material, a preparation method and an application for a memory, and more specifically relates to a tellurium-free storage material, a preparation method and an application. It belongs to the field of storage materials. Background technique [0002] The research of phase-change memory is a hot spot in memory research at present, and has a broad market prospect. At present, phase-change memory can be roughly divided into two categories, one is the commercialized multimedia data disc (DVD), and the other is under research and development. Chalcogenide random access memory (C-RAM, Chalcogenide random access memory). C-RAM has the advantages of high speed, high density, simple structure, low cost, radiation resistance, and non-volatility. It is currently the most powerful competitor of the next-generation memory that is widely expected, and has a broad market prospect. It will replace the currently widely used flash memo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/06C23C14/35C23C14/06G11B7/24G11B7/2433
Inventor 张挺宋志棠刘波刘卫丽封松林陈邦明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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