Method for processing GaN epitaxial substrate

A processing method and substrate technology, which are applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of easy introduction of impurities, high production cost, increased stress, etc. The effect of reducing the processing cost
CN101378002AInactive Publication Date: 2009-03-04SHANDONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANDONG UNIV
Publication Date
2009-03-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a processing method which is used for GaN epitaxial substrate, comprising the following steps of: carrying out grinding for a single crystal rod cut so as to remove the tool marks of the chip; (2) conducting chemical mechanical polishing to the chip grinded so as to remove a damage layer which is caused by grinding; (3) carrying out annealing to the chip after chemical mechanical polishing so as to remove the damage of near-surface atoms, with the annealing temperature from 500 DEG C to 1500 DEG C, and the temperature preserving time from 10 hours to20 hours; (4) cleaning the chip polished so as to remove residual particles and pollutants on the near-surface thereof. The invention can obtain required substrate by just conducting simple chemical mechanical polishing, does not conducting super-precision chemical mechanical polishing, reduces the processing cost of the substrate, and improves the processing efficiency. The method which is simple and feasible greatly improves the light extraction efficiency thereof as the stripes of the near-surface graphics of the single crystal substrate manufactured are irregular arbitrary scratches.
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Description

technical field

[0001] The invention relates to a method for processing a GaN epitaxy substrate, which is a method for processing a single crystal substrate with irregular stripes which is applied to the epitaxial growth of semiconductor materials. Background technique

[0002] Group III nitride materials represented by GaN have the advantages of wide band gap, direct band gap, high breakdown electric field, high electron saturation drift rate, strong radiation resistance, excellent chemical stability and thermal stability, etc. The working requirements of high temperature, high frequency and high power semiconductor devices have important application value in microelectronic devices and short wavelength (blue-green light and ultraviolet band) optoelectronic devices. Due to the current lack of large-diameter GaN substrates, GaN epitaxial thin films can only be grown on single crystal substrates such as sapphire, SiC, and Si with large mismatches with them. Due to the lattice...

Claims

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