Method for processing GaN epitaxial substrate

A processing method and substrate technology, which are applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of easy introduction of impurities, high production cost, increased stress, etc. The effect of reducing the processing cost

Inactive Publication Date: 2009-03-04
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the defects of complex process, easy introduction of impurities, increased stress, damage and contamination of the substrate, and high production cost in the prior art when processing graphic substrates, and provide a simple and ea

Method used

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  • Method for processing GaN epitaxial substrate
  • Method for processing GaN epitaxial substrate
  • Method for processing GaN epitaxial substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0029] Utilize the method of the present invention to prepare SiC substrate, comprise the following steps:

[0030] (1) Grinding the SiC single crystal rod cut by the wire saw to remove the knife marks on the wafer:

[0031] a. Use silicon carbide powder with a particle size of 20 μm, and mix it with water and suspending agent at a weight ratio of 1:1:0.1 to form a non-toxic grinding liquid with good fluidity, good suspending ability, and the suspending agent used is glycerin;

[0032] b Use a grinding machine to use a cast iron grinding disc and use the prepared grinding liquid to grind the SiC sheet in one or more stages until the knife marks on the wafer are removed, and the pressure on the wafer is 30g / cm 2 ;

[0033] (2) Carry out chemical mechanical polishing to the ground SiC wafer until the damaged layer of grinding is completely removed:

[0034] aUsing diamond micropowder with a particle size of 5 μm, the micropowder, water, dispersant and suspending agent are prep...

Embodiment 2

[0040] Adopt chemical mechanical polishing method of the present invention to prepare sapphire substrate, specific polishing method and polishing result are identical with embodiment 1, difference is, during grinding and chemical mechanical polishing, the pressure on the control wafer is 300g / cm 2, the suspending agent that adopts is ethylene glycol. When grinding, use boron carbide powder with a particle size of 40 μm, and the weight ratio of the powder, water and suspending agent in the grinding liquid is 1:100:200; during chemical mechanical polishing, use silicon carbide powder with a particle size of 10 μm, and the polishing disc uses a tin plate , the dispersant used is triethanolamine, and the weight ratio of micropowder, water, dispersant and suspending agent in the polishing liquid is 1:100:5:100. After chemical mechanical polishing, the annealing temperature of the wafer is 1500° C., and the holding time is 20 hours.

[0041] The surface morphology of the prepared s...

Embodiment 3

[0043] The present invention adopts the chemical mechanical polishing method to prepare the Si substrate. The specific polishing method and polishing result are the same as in Example 1, the difference is that during grinding and chemical mechanical polishing, the pressure on the control wafer is 500g / cm 2 , the suspending agent used is polyethylene glycol; when grinding, use alumina micropowder with a particle size of 50 μm, and the weight ratio of the micropowder, water and suspending agent in the grinding liquid is 1:200:100; during chemical mechanical polishing, use particle size It is 15μm boron carbide or alumina micropowder, the polishing disc is tin plate, the dispersant used is sodium silicate or sodium hexametaphosphate or ammonia water, the ratio of micropowder, water, dispersant and suspending agent in the polishing liquid is 1:1 :0.1:1. After chemical mechanical polishing, the annealing temperature of the wafer is 500° C., and the holding time is 10 hours.

[004...

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Abstract

The invention provides a processing method which is used for GaN epitaxial substrate, comprising the following steps of: carrying out grinding for a single crystal rod cut so as to remove the tool marks of the chip; (2) conducting chemical mechanical polishing to the chip grinded so as to remove a damage layer which is caused by grinding; (3) carrying out annealing to the chip after chemical mechanical polishing so as to remove the damage of near-surface atoms, with the annealing temperature from 500 DEG C to 1500 DEG C, and the temperature preserving time from 10 hours to20 hours; (4) cleaning the chip polished so as to remove residual particles and pollutants on the near-surface thereof. The invention can obtain required substrate by just conducting simple chemical mechanical polishing, does not conducting super-precision chemical mechanical polishing, reduces the processing cost of the substrate, and improves the processing efficiency. The method which is simple and feasible greatly improves the light extraction efficiency thereof as the stripes of the near-surface graphics of the single crystal substrate manufactured are irregular arbitrary scratches.

Description

technical field [0001] The invention relates to a method for processing a GaN epitaxy substrate, which is a method for processing a single crystal substrate with irregular stripes which is applied to the epitaxial growth of semiconductor materials. Background technique [0002] Group III nitride materials represented by GaN have the advantages of wide band gap, direct band gap, high breakdown electric field, high electron saturation drift rate, strong radiation resistance, excellent chemical stability and thermal stability, etc. The working requirements of high temperature, high frequency and high power semiconductor devices have important application value in microelectronic devices and short wavelength (blue-green light and ultraviolet band) optoelectronic devices. Due to the current lack of large-diameter GaN substrates, GaN epitaxial thin films can only be grown on single crystal substrates such as sapphire, SiC, and Si with large mismatches with them. Due to the lattice...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/02H01L21/302H01L21/304
Inventor 陈秀芳徐现刚胡小波
Owner SHANDONG UNIV
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