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Aluminum-doped zinc oxide film coating and nano-rod array material as well as preparation method thereof

An aluminum-doped zinc oxide, nanorod array technology, applied in nanostructure manufacturing, nanotechnology, nanotechnology and other directions, to achieve the effect of reducing cost, improving transmittance and reducing resistivity

Inactive Publication Date: 2012-09-12
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are occasional reports on the preparation of ZnO nanorod arrays by hydrothermal method at home and abroad, but there are no reports on the preparation of highly oriented Al-doped ZnO nanorod arrays by this method.

Method used

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  • Aluminum-doped zinc oxide film coating and nano-rod array material as well as preparation method thereof
  • Aluminum-doped zinc oxide film coating and nano-rod array material as well as preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0028]Embodiment 1: take by weighing zinc acetate dihydrate 65.853g, aluminum nitrate nonahydrate 5.418g, be dissolved in it completely in the organic solvent and be made into 250 milliliters of solutions, organic solvent can select ethylene glycol methyl ether for use, evaporate to reflux, heat and stir, Add 3.5 milliliters of stabilizer ethanolamine to the solution after reflux, heat and stir in a water bath at 60°C for 1 hour, then add an organic reagent absolute ethanol to set the volume to 500 milliliters, and obtain a transparent homogeneous sol with a concentration of 0.6mol / L. The concentration [Al / Zn] is 2.0%; use glass slides as the substrate, and the substrate should be cleaned. The cleaning method is to wash away the stains on the substrate with washing powder and tap water; soak in 10% NaOH dilute solution to remove oil stains; Soak in potassium dichromate solution; rinse with deionized water; then soak in deionized water, formaldehyde solution, absolute ethanol so...

Embodiment 2

[0029] Embodiment 2: take by weighing zinc acetate dihydrate 43.902g, aluminum nitrate nonahydrate 5.586g, be dissolved in it completely in the organic solvent and be made into 250 milliliters of solutions, organic solvent can select Virahol for use, evaporate and reflux, heat and stir, in reflux Add 4.5 milliliters of stabilizer acetylacetone to the final solution, heat and stir in a water bath at 70°C for 1 hour, then add organic reagent formamide to set the volume to 500 milliliters, and obtain a transparent homogeneous sol with a concentration of 0.4mol / L and a doping concentration of [ Al / Zn] 3.1%; Make substrate with glass slide, substrate should be cleaned up, and cleaning method is with embodiment 1. The spin coating method was used to form the film. First, the glue was dripped at 1000r / min for 20 seconds, and then the glue was homogenized at 3000r / min for 25 seconds. Dry at 100°C for 10 minutes; then pretreat at 300°C for 10 minutes; repeat coating 5-10 times after co...

Embodiment 3

[0030] Embodiment 3: adopt the method for embodiment 1 to prepare aluminum-doped zinc oxide (ZAO) seed layer and make it adhere on the glass sheet that is coated with indium tin oxide (ITO), weigh zinc acetate dihydrate 2.195g and nitric acid nonahydrate respectively 0.1806g of aluminum was dissolved in distilled water respectively, and then the two solutions were mixed, 15g of hexamethylenetetramine was added, and 8 ml of surfactant polyethyleneimine was added, stirred evenly, the volume was set to 500 ml, and stirred evenly to obtain a precursor solution . Wash the ZAO seed layer repeatedly with distilled water, then tilt it into the hydrothermal reaction kettle; pour the precursor solution into the reaction kettle to 60% of the volume, seal the reaction kettle; put the reaction kettle in a vacuum drying oven at 95°C for hydrothermal Reaction, the reaction time is 6h; after the reaction is completed and the reaction kettle is cooled, take out the ITO glass sheet and rinse it...

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Abstract

The invention discloses an aluminum-doped zinc oxide film coating and nano-rod array material as well as a preparation method thereof. The aluminum-doped zinc oxide film coating and nano-rod array material comprises the components based on the weight percentage: 95-99% of zinc oxide and 1-5% of aluminum-doped quantity. The preparation method adopts a sol-gel method, zinc acetate and aluminium nitrate are added with organic solvent according to the proportion for heating under reflux; the mixed solution is then added with certain quantity of stabilizing agent for water bath heating at certain temperature and added with organic reagents such as absolute ethyl alcohol, methanamide or methanol and the like to prepare sol according to the need; after that, a spin coating method is adopted to form a film, and the aluminum-doped zinc oxide nano film coating material can be obtained by the processes such as drying, pretreating, repeatedly spin coating, annealing, secondary annealing under theatmosphere of hydrogen and nitrogen and the like; then, a hydrothermal method is adopted for preparing highly oriented aluminum-doped zinc oxide nano-rod and array thereof. The invention has high utilization rate of the raw materials, low cost and simplified preparation technique, and can control the performance and the particle size of the material from the molecular design level.

Description

technical field [0001] The invention belongs to the technical field of thin films, and relates to an aluminum-doped zinc oxide coating film and a nanorod array material and a preparation method thereof. Background technique [0002] Metal oxide transparent conductive films have broad application prospects and have been widely used in flat panel displays, electromagnetic shielding, thermal barriers, gas sensors, solar cells and other fields. Representative metal oxide transparent conductive film materials mainly include In 2 o 3 , SnO 2 and ZnO three major systems. [0003] At present, the most widely used metal oxide transparent conductive materials are In 2 o 3 :Sn(ITO) thin film, which has the advantages of high light transmittance, good conductivity, strong substrate adhesion and high hardness, based on the commercial production of magnetron sputtering technology, ITO thin film has been widely used in flat panel display devices . However, due to the small reserves ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/23C03C17/34B82B3/00
Inventor 段学臣刘扬林李海斌朱协彬刘梓旗
Owner CENT SOUTH UNIV
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