Method for preparing graphene material based on chemical deposition

A chemical deposition method and chemical deposition technology, which are applied in the field of batch preparation of graphene, can solve the problems of many surface defects of graphene materials, unable to realize batch preparation, and fail to realize batch production, etc., and achieve fewer defects, complete crystal structure, Realize the effect of mass production

Inactive Publication Date: 2011-07-20
HARBIN ENG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, although graphene has many of the above advantages, it has not yet achieved mass production, and the current preparation methods are limited to laboratory preparations, including mechanical exfoliation, redox and chemical vapor deposition.
For example, Geim et al. (Novoselov K S, Geim A K, Morozov S V, et al.Science, 2004, 306: 666), professors of physics at the University of Manchester, have prepared graphene using the tape stripping method, but this method cannot achieve batch production
Patent application numbers 200910070735.0; 200910054919.8; 200910184202.5 and other patent documents disclose the p

Method used

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Embodiment 1

[0022] With the quartz substrate as the substrate, put it into the reactor, raise the temperature to 800 °C under the nitrogen atmosphere, and put the CoCl 2 Mix it with polypropylene and acetone at a ratio of 0.001:1:1 and pass it into the reactor for 30 minutes. After cooling, take out the substrate, put it in dilute hydrochloric acid and ultrasonically wash it thoroughly, filter and wash it until neutral, and dry the obtained graphene material.

Embodiment 2

[0024] Based on the ceramic ball whose main composition is zirconia, put it into the reactor, raise the temperature to 1000℃ under the argon atmosphere, and put the NiCl 2 Mix it with polyethylene and ethyl acetate in a ratio of 10:1:100 and pass it into the reactor for 2 minutes. After cooling, take out the substrate, put it in dilute hydrochloric acid and ultrasonically wash it thoroughly, filter and wash it until neutral, and dry the obtained graphene. Material.

Embodiment 3

[0026] Based on the ceramic ball whose main composition is Al2O3, it is put into the reactor, and the temperature is raised to 500 ° C under the helium atmosphere, and the FeSO 4 Mix it with polystyrene and benzene at a ratio of 0.01:1:50 and pass it into the reactor for 1 hour of reaction. After cooling, take out the substrate, place it in dilute hydrochloric acid and ultrasonically wash it thoroughly, filter and wash it until neutral, and dry the obtained graphene material. .

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Abstract

The invention aims at providing a method for preparing a graphene material based on chemical deposition. The method comprises the following steps of: (1) uniformly mixing a soluble salt of a graphite catalyst, a polymer and an organic solvent; (2) adding a substrate in a reactor, heating the reactor to 450-1000 DEG C under the protection of inert gas; (3) introducing the mixture obtained by the step (1) into the reactor under the protection of inert gas to be subjected to chemical deposition; and (4) cooling and taking out the substrate, and removing catalyst particles by ultrasonic processing and acid pickling, thus the graphene material is obtained. In the invention, an organic solvent and a soluble polymer are adopted as the carbon sources, and a floating catalyst is used for cracking the carbon sources under the protective gas atmosphere, thus a single-layer or multi-layer graphene material is grown on the substrate, the graphene material is prepared in batch by chemical deposition, and the graphene material prepared by the method has the advantages of complete crystal form, low oxygen content and less defects.

Description

technical field [0001] The invention relates to a method for preparing nanomaterials, in particular to a method for preparing graphene in batches. Background technique [0002] Graphene material is a nano-scale graphite material composed of single-layer graphite. Due to its excellent electrical conductivity, thermal conductivity and mechanical properties, it has great potential application value in the fields of nano-devices, heat conduction, electrical conduction and energy storage. The theoretical specific surface area is as high as 2600m 2 / g, with outstanding thermal conductivity (3000W / (m K)) and mechanical properties (1060GPa), as well as high-speed electron mobility at room temperature (15000cm 2 / (V·s)). Graphene's special structure makes it have a series of properties such as perfect quantum tunneling effect, half-integer quantum Hall effect, and never-disappearing electrical conductivity, which has aroused great interest in the scientific community. However, alt...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/56
Inventor 范壮军魏彤闫俊赵乾坤
Owner HARBIN ENG UNIV
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