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Preparation method of zinc oxide/diamond-like surface acoustic wave device composite film

A surface acoustic wave device and diamond thin film technology, which is applied in the metal material coating process, vacuum evaporation plating, coating, etc., can solve the problem of the roughness of the diamond thin film, and the width of the interdigital transducer cannot be infinitely finer. and other issues, to achieve the effects of reduced loss, low cost, and simple preparation process

Inactive Publication Date: 2011-12-21
NANJING UNIV OF SCI & TECH
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Problems solved by technology

[0005] The purpose of the present invention is to provide a simple and reliable preparation method of zinc oxide / diamond-like surface acoustic wave device composite film, which solves the problem that the width of the interdigital transducer cannot be miniaturized without limit and the roughness of the diamond film is difficult to apply to practice The problem

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preparation example Construction

[0016] The diamond-like carbon film has a high elastic modulus and a smooth surface, which is suitable for the frequency increase of the surface acoustic wave device; the c-axis oriented ZnO film has piezoelectric properties and can be used for the surface acoustic wave device; the pulsed laser deposition method has a fast deposition rate, It has the advantages of low impurity content and high film growth quality, and can be used to prepare high-quality diamond-like films and ZnO films. A preparation method of a ZnO / DLC surface acoustic wave device composite film of the present invention adopts pulsed laser plasma deposition technology, uses graphite and zinc oxide as targets, and deposits a ZnO / DLC composite film on a silicon substrate by controlling growth conditions , including the following steps:

[0017] Step 1. Cleaning the surface of the silicon substrate; specifically: put the monocrystalline silicon wafer in acetone or alcohol for ultrasonic cleaning with an ultrason...

Embodiment 1

[0025] Using an excimer pulsed laser system with a wavelength of 248 nm to deposit a ZnO / DLC composite thin film structure on Si(100), the specific operation steps are:

[0026] Step 1. Select single crystal Si (100) as the substrate, put it into alcohol, use an ultrasonic cleaning machine to ultrasonically clean it for 15 minutes, and dry it with cold wind for use.

[0027] Step 2, fix the cleaned single crystal Si(100) substrate on the substrate table of the pulsed laser deposition system, use high-purity graphite and zinc oxide as targets and install them in the growth chamber; use mechanical The pump and the molecular pump evacuate the growth chamber until the background vacuum is equal to 1×10 -3 Pa.

[0028] Step 3. When the background vacuum is reached, open the gas valve to feed high-purity argon gas into the growth chamber, ablate the graphite target with pulsed laser, and deposit a diamond-like carbon film on the single crystal Si(100). The distance between the gra...

Embodiment 2

[0034] Using an excimer pulsed laser system with a wavelength of 248 nm to deposit a ZnO / DLC composite thin film structure on Si(100), the specific operation steps are:

[0035] Step 1. Select single crystal Si (100) as the substrate, put it into alcohol, use an ultrasonic cleaning machine to ultrasonically clean it for 10 minutes, and dry it with cold wind for use.

[0036] Step 2, fix the cleaned single crystal Si(100) substrate on the substrate table of the pulsed laser deposition system, use high-purity graphite and zinc oxide as targets and install them in the growth chamber; use mechanical The pump and the molecular pump evacuate the growth chamber until the background vacuum is equal to 1×10 -3 Pa.

[0037] Step 3. When the background vacuum is reached, open the gas valve to feed high-purity argon gas into the growth chamber, ablate the graphite target with pulsed laser, and deposit a diamond-like carbon film on the single crystal Si(100). The distance between the gra...

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Abstract

A diamond-like carbon (DLC) film has high sound velocity and smooth surface and is an ideal substrate material of the surface acoustic wave device; and the zinc oxide (ZnO) film with c-axis preferred orientation has piezoelectric property. The invention relates to a surface acoustic wave device and provides a preparation method of a ZnO / DLC surface acoustic wave device composite film structure which can be used in the field of surface acoustic wave devices with high frequency, electromechanical coupling coefficient and power. In the method, a pulse laser plasma deposition technology is utilized and uses graphite and ZnO as the target. The method comprises the following steps: depositing a DLC film on a silicon substrate, and further depositing a ZnO film with c-axis preferred orientation on the DLC film to obtain the ZnO / DLC composite film structure for the film surface acoustic wave device. The method is simple and practical in preparation technology; and the ZnO / DLC composite film structure can be used for preparing the surface acoustic wave device which has the advantages of low insertion loss, high frequency and high power.

Description

technical field [0001] The invention relates to a preparation method of a surface acoustic wave device, in particular to a preparation method of a composite film structure of a ZnO / DLC surface acoustic wave device which can be used in the field of high-frequency, low insertion loss, and high-power surface acoustic wave devices. Background technique [0002] In recent years, with the demand for large-capacity data transmission and the rapid development of satellite communications, mobile communications, and optical fiber communications, the demand for surface acoustic wave (SAW) devices has increased day by day, and the frequency of use has continued to increase. It has developed from the initial MHz level to the present The continuous development of these high-frequency application systems has increased the technical difficulty of high-frequency devices. The frequency of a SAW device is proportional to the sound propagation velocity of the material, and inversely proportiona...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/06C23C14/08C23C14/58
Inventor 邹友生杨皓苍凯周凯汪海鹏
Owner NANJING UNIV OF SCI & TECH
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