High temperature oxidation resistant film sensor and production method thereof

A thin film sensor, high temperature oxidation resistance technology, applied in metal material coating process, superimposed layer plating, coating and other directions, can solve the problem of ITO thin film resistivity increase, affecting performance stability, reliability and measurement accuracy, The problem of carrier concentration decline, etc., achieves excellent anti-oxidation and insulating properties, good blocking of sodium ions, and high chemical stability.

Inactive Publication Date: 2013-08-28
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF3 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this kind of thin film sensor has the following defects in its work: in high temperature environment, Al 2 o 3 Ceramic insulating layer and Al 2 o 3 Al in protective layer 2 o 3 It will decompose and generate oxygen atoms, so that the functional layer of the thin film sensor is in an oxidizing environment; while the common thin film sensor functional layer materials are very sensitive to oxidation, such as common thin film thermocouple functional layer materials, ITO (indium tin oxide) thermoelectric Take even thin film as an example, ITO thin film is an n-type semiconductor, and the carriers mainly come from the donor Sn 4+ Substitution of In in Indium Oxide 3+ One electron released and two electrons released by the oxygen vacancies of indium oxide in the reduced state, and when the ITO film is oxidized, the oxygen vacancies existing in the ITO film will also be filled by oxygen atoms, making the resistance of the ITO film The rate rises sharply, the carrier concentration decreases, and the conductivity deteriorates, which seriously affects important parameters such as the Seebeck coefficient of the thin-film thermocouple; among the common thin-film strain gauge functional layer materials, NiCr material in the metal thin film is taken as an example, its conductivity The mechanism is that the valence electrons are not bound by atoms and move freely in the metal. When some metal atoms combine with oxygen to form oxides, the conductivity will become poor and will affect the TCR (temperature coefficient of resistance) of the thin film strain gauge to a certain extent. ) and GF factor (gauge factor)
[0004] In the patent document with the publication number CN102212823A, the "Method of Setting a Thin Film Sensor on an Alloy Substrate" is disclosed. After a certain thickness of aluminum (Al) is deposited in the NiCrAlY transition layer, the method of the invention is directly sputtered by magnetron sputtering. Sputtering a layer of metal aluminum (Al), so that the sputtered layer of metal aluminum (Al) and the precipitated aluminum (Al) are fused into one, and evenly distributed on the surface of the NiCrAlY transition layer, and then the metal aluminum (Al) layer Oxidation treatment to generate Al 2 o 3 Connect the transition layer, and then in the Al 2 o 3 Preparation of Al on the connecting transition layer 2 o 3 Ceramic insulating layer, thin film sensor functional layer and A

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High temperature oxidation resistant film sensor and production method thereof
  • High temperature oxidation resistant film sensor and production method thereof
  • High temperature oxidation resistant film sensor and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0033] Example 1: A nickel (Ni)-based alloy plate is used as the alloy substrate to be tested 1. An ITO thermocouple thin film sensor is prepared on it, and silicon nitride is selected as the protective layer material as an example:

[0034] 1) Surface treatment of alloy substrate: use (length×width×thickness) 30×95×5mm nickel (Ni)-based alloy plate as the test alloy substrate 1, and then use acetone and ethanol to perform the surface of the test alloy substrate. After cleaning, dry it under nitrogen atmosphere;

[0035] 2) Depositing NiCrAlY alloy transition layer on the alloy substrate: Put the cleaned Ni-based alloy substrate 1 in a vacuum of 6.0×10 -4 In a Pa vacuum (ie, background vacuum) environment, NiCrAlY alloy is used as the target material, and argon gas with a purity of 99.999% (volume percentage) is input as the sputtering medium. The temperature is 500℃, the power is 300W, and the sputtering pressure (working pressure) ) Under the condition of 0.6 Pa, the NiCrAlY allo...

Example Embodiment

[0042] Embodiment 2: A nickel (Ni)-based alloy plate is used as the alloy substrate to be tested, and a K-type NiCr-NiSi thermocouple thin film sensor is prepared on it:

[0043] This embodiment specifically implements steps 1), 2), 3), 4), 5), and 6) and the process conditions and parameters of A, B, C, D, E, and F in the specific implementation in the disclosure specification of invention patent application CN102212823A Correspond to the same;

[0044] 7) Set up the functional layer of thin film sensor and its Si 3 N 4 Isolation layer: first place the composite substrate prepared in step 6) on the background and the vacuum degree is 6.0×10 -4 SiH is used in Pa CVD processing equipment 4 / NH 3 (The flow ratio is SiH 4 : NH 3 =1: 9) As the gas source, the background vacuum degree is 6.0×10 -4 Pa, working pressure is 60Pa, deposition temperature is 270℃, radio frequency power is 20W, the Si 3 N 4 Deposited on the composite substrate to obtain Si with a thickness of 1μm 3 N 4 The base...

Example Embodiment

[0046] Example 3: A nickel (Ni)-based alloy plate is used as the alloy substrate to be tested, and a K-type NiCr-NiSi thermocouple thin film sensor is prepared on it:

[0047] This embodiment specifically implements steps 1), 2), 3), 4), and 5) and the specific embodiments disclosed in the disclosure specification CN101894904A of the invention patent application in 1), 2), 3), 4), 5) process conditions and The parameters correspond to the same;

[0048] 6) Set up the functional layer of the thin film sensor and its Si 3 N 4 Isolation layer: First, the vacuum on the background is 6.0×10 -4 Pa, with argon as the reaction medium, Ni90Cr10 and Ni97Si3 as the target materials, under the conditions of room temperature, power of 100W, and working pressure of 0.4Pa, the conventional magnetron sputtering method is used to deposit sequentially on the surface of the AlN ceramic insulating layer 4 Two NiCr-NiSi thermocouples with a thickness of 1μm are used as the (thin film) sensor functional...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to a high temperature oxidation resistant film sensor and a production method thereof. The film sensor comprises a to-be-tested alloy substrate and a NiCrAlY alloy transition layer adhered on the top surface of the substrate, an aluminum oxide/aluminum nitride transition layer, an aluminum oxide/aluminum nitride ceramic insulating layer, a sensor function layer composed of electrodes, a Si3N4 isolating layer and an aluminum oxide protective layer arranged on the insulating layer are orderly arranged above the transition layer; the production method comprises surface treatment of alloy substrate, NiCrAlY alloy transition layer settling on the alloy substrate, precipitation, oxidation or nitriding treatment of metal aluminum, setting of Al2O3/AlN ceramic insulating layer, setting of film sensor function layer and Si3N4 isolating layer thereof, and setting of Al2O3 protective layer. The Si3N4 isolating layer in the invention can be used for effectively resisting the oxygen atom dissolved from the insulating layer and aluminum oxide protective layer at high temperature environment to diffuse to the function layer, the stability and reliability of the sensor at high temperature high pressure working environment can be improved, and relative and more accurate basic data is provided for the study and design of a turbine engine.

Description

technical field [0001] The invention belongs to the technical field of thin-film sensor design and production, in particular to an alloy material such as the turbine engine blade to be tested and the inner wall of the combustion chamber as a substrate, and is directly provided with a high-temperature oxidation resistance sensor on the surface of the turbine engine blade to be tested, the inner wall of the combustion chamber, and the like. The thin-film sensor method, such sensors can be widely used in the measurement of temperature, strain and other state parameters on the surface of structural parts such as turbine engine blades and combustion chamber walls, and provide more accurate basic data for the research and design of turbine engines. Background technique [0002] When modern aero-engines are working, because the turbine blades and combustion chamber are in the harsh environment of high temperature and high pressure generated by gas combustion, the surface temperature...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C28/00
Inventor 蒋洪川吴勐陈寅之蒋书文刘兴钊张万里
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap