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Particle dispersion toughening aluminum nitride ceramic substrate and preparation method thereof

A technology of aluminum nitride ceramics and particles, which is applied in the field of nitride ceramics, can solve the problems of undisclosed W, Mo particles, poor density of AlN ceramics, and unsatisfactory comprehensive performance, and achieve comprehensive performance improvement, high density, and economical processing cost effect

Active Publication Date: 2014-02-05
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The AlN ceramic is at 1500°C-2000°C, N 2 Sintered under atmosphere protection, its relative density exceeds 81%. The AlN ceramics prepared by this method have the problems of poor density and low thermal conductivity. The comprehensive performance cannot meet the requirements of high-power LED and IGBT modules for AlN ceramic packaging substrates, and The patent does not disclose the influence of W and Mo particles on the mechanical properties of the matrix
[0005] The existing AlN ceramic substrates are generally prepared by adding sintering aids and aluminum nitride powder together, then undergoing molding processes such as dry pressing or tape casting, and then sintering. The AlN ceramic substrates prepared by this method have High thermal conductivity and good electrical properties, but it has poor mechanical properties, such as fracture toughness, low bending strength and poor thermal shock resistance

Method used

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  • Particle dispersion toughening aluminum nitride ceramic substrate and preparation method thereof
  • Particle dispersion toughening aluminum nitride ceramic substrate and preparation method thereof
  • Particle dispersion toughening aluminum nitride ceramic substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Add 4wt% of Y 2 o 3 Sintering aid, 3wt.% Mo as toughening phase, 93wt.% AlN powder. Use absolute ethanol as the medium to ultrasonically disperse for 20 minutes, roll the mixed slurry for 24 hours, and the ball milling speed is 150 rpm; dry the mixed slurry after ball milling with a rotary evaporator, sieve and put it into a graphite mold for pre-treatment. Compression molding, the pressure is 5MPa; use graphite paper to separate the powder from the inner wall of the graphite mold, and evenly spray BN mold release agent on the graphite paper, hot press sintering under the protection of nitrogen atmosphere, sintering temperature 1800 ℃, holding time 3h, pressure is 25MPa.

[0044] The properties of the prepared AlN ceramic samples are as follows:

[0045] density 3.362 g / cm 3 Relative density 99.5% Thermal conductivity 181w / m.k Fracture toughness 3.15±0.032MPa.m 1 / 2 Three point flexural strength 464MPa volume resistivity ...

Embodiment 2

[0047] Add 4wt% of Y 2 o 3 Sintering aid, 5wt.% Mo as toughening phase, 91wt.% AlN powder. Use absolute ethanol as the medium to ultrasonically disperse for 20 minutes, roll the mixed slurry for 24 hours, and the ball milling speed is 150 rpm; dry the mixed slurry after ball milling with a rotary evaporator, sieve and put it into a graphite mold for pre-treatment. Compression molding, the pressure is 5MPa; use graphite paper to separate the powder from the inner wall of the graphite mold, and evenly spray BN mold release agent on the graphite paper, hot press sintering under the protection of nitrogen atmosphere, sintering temperature 1800 ℃, holding time 3h, pressure It is 25MPa, and its X-ray diffraction pattern is as follows image 3 , SEM picture as Figure 4 .

[0048] The properties of the prepared AlN ceramic samples are as follows:

[0049] density 3.369g / cm 3 Relative density 98.5% Thermal conductivity 180w / m.k Fracture toughness 3...

Embodiment 3

[0051] Add 4wt% of Y 2 o 3 Sintering aid, 3wt.% of W is the toughening phase, 93wt.% of AlN powder. Use absolute ethanol as the medium to ultrasonically disperse for 20 minutes, roll the mixed slurry for 24 hours, and the ball milling speed is 150 rpm; dry the mixed slurry after ball milling with a rotary evaporator, sieve and put it into a graphite mold for pre-treatment. Compression molding, the pressure is 5MPa; use graphite paper to separate the powder from the inner wall of the graphite mold, and evenly spray BN mold release agent on the graphite paper, hot press sintering under the protection of nitrogen atmosphere, sintering temperature 1800 ℃, holding time 3h, pressure is 25MPa.

[0052] The properties of the prepared AlN ceramic samples are as follows:

[0053] density 3.487 g / cm 3 Relative density 100% Thermal conductivity 171 w / m.k Fracture toughness 2.98±0.033MPa.m 1 / 2 Three point flexural strength 372MPa volume resi...

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Abstract

The invention discloses a particle dispersion toughening aluminum nitride ceramic substrate for the illumination packaging of a high-power LED (Light-Emitting Diode) and a preparation method thereof. The particle dispersion toughening aluminum nitride ceramic substrate comprises the following components in percentage by weight: 80%-95% of AIN (Aluminum Nitride) powder, 2%-8% of sintering auxiliary agents and 3%-12% of toughening phases, wherein the sintering auxiliary agents are one or mixtures of any combination of a rare-earth metal oxide, a weak base oxide and a rare-earth fluoride or a weak base fluoride; the toughening phases are one or mixtures of any combination of molybdenum, tungsten, niobium, molybdenum carbide, tungsten carbide and niobium carbide. According to the invention, the fracture toughness of The AIN substrate disclosed by the invention is effectively enhanced in fracture toughness through crack deflexion and bending, crack bridging and a residual stress toughening mechanism, can meet the requirements for high heat conductivity and excellent electric property due to good chemical compatibility of the added toughening phases and the aluminum nitride base body, enhances the comprehensive property of aluminum nitride and has excellent mechanical property, heat-conducting property and electrical property.

Description

technical field [0001] The invention relates to the field of nitride ceramics, more specifically, to an aluminum nitride ceramic substrate with particle dispersion toughening, high thermal conductivity and excellent electrical properties and a preparation method thereof. Background technique [0002] Aluminum nitride (AlN) ceramic materials have the characteristics of high thermal conductivity, low dielectric constant, low dielectric loss, excellent insulation performance, corrosion resistance and thermal expansion coefficient matching silicon, and are ideal for high power density circuits, LED lighting and IGBT fields. Ideal encapsulation material. [0003] The research of AlN mainly focuses on the improvement of thermal conductivity. Generally, rare earth metal oxides, alkaline earth metal oxides, rare earth metal fluorides, alkaline earth metal fluorides and their composite formulations are used as sintering aids to obtain sintered bodies with high thermal conductivity. ...

Claims

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Application Information

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IPC IPC(8): C04B35/74C04B35/78C04B35/58C04B35/622
Inventor 伍尚华付君宇程艳玲付常露邬若军卢忠勇
Owner GUANGDONG UNIV OF TECH
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