Particle dispersion toughening aluminum nitride ceramic substrate and preparation method thereof

A technology of aluminum nitride ceramics and particles, which is applied in the field of nitride ceramics, can solve the problems of undisclosed W, Mo particles, poor density of AlN ceramics, and unsatisfactory comprehensive performance, and achieve comprehensive performance improvement, high density, and economical processing cost effect

Active Publication Date: 2014-02-05
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The AlN ceramic is at 1500°C-2000°C, N 2 Sintered under atmosphere protection, its relative density exceeds 81%. The AlN ceramics prepared by this method have the problems of poor density and low thermal conductivity. The comprehensive performance cannot meet the requirements of high-power LED and IGBT modules for AlN ceramic packaging substrates, and The patent does not disclose the influence of W and Mo particles on the mechanical properties of the mat

Method used

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  • Particle dispersion toughening aluminum nitride ceramic substrate and preparation method thereof
  • Particle dispersion toughening aluminum nitride ceramic substrate and preparation method thereof
  • Particle dispersion toughening aluminum nitride ceramic substrate and preparation method thereof

Examples

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Example Embodiment

[0042] Example 1

[0043] Add 4wt% Y 2 O 3 Sintering aid, 3wt.% Mo is the toughening phase, and 93wt.% AlN powder. Use anhydrous ethanol as a medium to ultrasonically disperse for 20 minutes, ball mill the mixed slurry for 24 hours at a speed of 150 rpm; dry the mixed slurry after ball milling with a rotary evaporator, sieving, and load it into a graphite mold. Press molding, the pressure is 5MPa; the powder is separated from the inner wall of the graphite mold with graphite paper, and the BN release agent is evenly sprayed on the graphite paper, and the sintering temperature is 1800℃, the holding time is 3h, and the pressure It is 25MPa.

[0044] The properties of the prepared AlN ceramic samples are as follows:

[0045] density3.362 g / cm 3 Relative density 99.5% Thermal conductivity 181w / m.k Fracture toughness3.15±0.032MPa.m 1 / 2 Three-point bending strength 464MPa Volume resistivity2.6×10 12 Ω.cm Dielectric constant 8.7 (1MHz, room temperature) Dielectric loss8.0×1...

Example Embodiment

[0046] Example 2

[0047] Add 4wt% Y 2 O 3 Sintering aid, 5wt.% Mo is the toughening phase, 91wt.% AlN powder. Use anhydrous ethanol as a medium to ultrasonically disperse for 20 minutes, ball mill the mixed slurry for 24 hours at a speed of 150 rpm; dry the mixed slurry after ball milling with a rotary evaporator, sieving, and load it into a graphite mold. Press molding, the pressure is 5MPa; the powder is separated from the inner wall of the graphite mold with graphite paper, and the BN release agent is evenly sprayed on the graphite paper, and the sintering temperature is 1800℃, the holding time is 3h, and the pressure Is 25MPa, and its X-ray diffraction pattern is as image 3 , SEM picture such as Figure 4 .

[0048] The properties of the prepared AlN ceramic samples are as follows:

[0049] density3.369g / cm 3 Relative density 98.5% Thermal conductivity 180w / m.k Fracture toughness3.24±0.026MPa.m 1 / 2 Three-point bending strength 488MPa Volume resistivity1.7×10 12 Ω....

Example Embodiment

[0050] Example 3

[0051] Add 4wt% Y 2 O 3 Sintering aid, 3wt.% W is the toughening phase, and 93wt.% AlN powder. Use anhydrous ethanol as a medium to ultrasonically disperse for 20 minutes, ball mill the mixed slurry for 24 hours at a speed of 150 rpm; dry the mixed slurry after ball milling with a rotary evaporator, sieving, and load it into a graphite mold. Press molding, the pressure is 5MPa; the powder is separated from the inner wall of the graphite mold with graphite paper, and the BN release agent is evenly sprayed on the graphite paper, and the sintering temperature is 1800℃, the holding time is 3h, and the pressure It is 25MPa.

[0052] The properties of the prepared AlN ceramic samples are as follows:

[0053] density3.487 g / cm 3 Relative density 100% Thermal conductivity 171 w / m.k Fracture toughness2.98±0.033MPa.m 1 / 2 Three-point bending strength 372MPa Volume resistivity2.1×10 12 Ω.cm Dielectric constant 8.9 (1MHz, room temperature) Dielectric loss9.087×...

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Abstract

The invention discloses a particle dispersion toughening aluminum nitride ceramic substrate for the illumination packaging of a high-power LED (Light-Emitting Diode) and a preparation method thereof. The particle dispersion toughening aluminum nitride ceramic substrate comprises the following components in percentage by weight: 80%-95% of AIN (Aluminum Nitride) powder, 2%-8% of sintering auxiliary agents and 3%-12% of toughening phases, wherein the sintering auxiliary agents are one or mixtures of any combination of a rare-earth metal oxide, a weak base oxide and a rare-earth fluoride or a weak base fluoride; the toughening phases are one or mixtures of any combination of molybdenum, tungsten, niobium, molybdenum carbide, tungsten carbide and niobium carbide. According to the invention, the fracture toughness of The AIN substrate disclosed by the invention is effectively enhanced in fracture toughness through crack deflexion and bending, crack bridging and a residual stress toughening mechanism, can meet the requirements for high heat conductivity and excellent electric property due to good chemical compatibility of the added toughening phases and the aluminum nitride base body, enhances the comprehensive property of aluminum nitride and has excellent mechanical property, heat-conducting property and electrical property.

Description

technical field [0001] The invention relates to the field of nitride ceramics, more specifically, to an aluminum nitride ceramic substrate with particle dispersion toughening, high thermal conductivity and excellent electrical properties and a preparation method thereof. Background technique [0002] Aluminum nitride (AlN) ceramic materials have the characteristics of high thermal conductivity, low dielectric constant, low dielectric loss, excellent insulation performance, corrosion resistance and thermal expansion coefficient matching silicon, and are ideal for high power density circuits, LED lighting and IGBT fields. Ideal encapsulation material. [0003] The research of AlN mainly focuses on the improvement of thermal conductivity. Generally, rare earth metal oxides, alkaline earth metal oxides, rare earth metal fluorides, alkaline earth metal fluorides and their composite formulations are used as sintering aids to obtain sintered bodies with high thermal conductivity. ...

Claims

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Application Information

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IPC IPC(8): C04B35/74C04B35/78C04B35/58C04B35/622
Inventor 伍尚华付君宇程艳玲付常露邬若军卢忠勇
Owner GUANGDONG UNIV OF TECH
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