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Polyimide nano fiber composite film, and preparation method and application thereof

A technology of polyimide membrane and nanofiber membrane, which is applied in the direction of spinning solution preparation, chemical instruments and methods, and printed circuit manufacturing. The amine synthesis method is complex and not suitable for large-scale application, etc., to achieve excellent electrical characteristics, lower dielectric constant, and good thermal stability

Inactive Publication Date: 2014-04-23
上海洁晟环保科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the above-mentioned methods all have some problems, such as the high cost of raw material preparation, the difficulty in controlling the shape, size and porosity of the air pores; the dielectric constant of the soluble polyimide porous membrane prepared by the supercritical carbon dioxide method can be reduced to 1.77, but the synthesis method of soluble polyimide is complicated and expensive, which is not suitable for large-scale application

Method used

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  • Polyimide nano fiber composite film, and preparation method and application thereof
  • Polyimide nano fiber composite film, and preparation method and application thereof
  • Polyimide nano fiber composite film, and preparation method and application thereof

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preparation example Construction

[0055] see figure 2 , figure 2 A preparation method 200 of a polyimide nanofiber composite membrane provided by the present invention comprises the following steps:

[0056] Step S210: preparing a polyimide film;

[0057] see image 3 , image 3 The flow chart of the steps for preparing polyimide membrane provided by a preferred embodiment of the present invention comprises the following steps:

[0058] Step S211: providing a polyamic acid solution;

[0059] Specifically, dianhydride and diamine monomers are added into a polar organic solvent at a molar ratio of 1:1, and stirred and reacted at 15-30° C. for 10-24 hours to obtain a polyamic acid solution. Among them, the dianhydride monomer is preferably pyromellitic dianhydride or 3,3,4,4-biphenyltetracarboxylic dianhydride, and the diamine monomer is preferably p-phenylenediamine or 4,4-diaminodiphenyl ether ; The polar organic solvent is any one of N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, an...

Embodiment 1

[0081]Dissolve 9.153g of 4,4-diaminodiphenyl ether in a 250ml three-necked flask filled with 140g of N,N-dimethylacetamide, and stir it with a mechanical stirring bar under the condition of blowing nitrogen. When 4,4-di After the aminodiphenyl ether is completely dissolved, add 10.075g of pyromellitic dianhydride to start the reaction, use a refrigerator to control the reaction temperature not to exceed 25°C, and react for 10 hours under the condition of sufficient stirring to obtain a transparent shallow Brown viscous polyamic acid solution.

[0082] The above polyamic acid solution was vacuum defoamed at room temperature for 2 hours to obtain a film-making solution and an electrospinning solution with a concentration of 10 wt%. A glass plate or a mirror stainless steel plate is used as the substrate. Scrape the above-mentioned film-making liquid on the substrate to form a liquid film with a thickness of 80 μm. After staying for 10 minutes, put it in an oven for imidization. ...

Embodiment 2

[0088] The commercially available polyamic acid solution was used as the raw material for the film-making solution and the electrospinning solution. The concentration of the purchased polyamic acid solution was 20 wt%, and N,N-dimethylacetamide was used as the solvent. The polyamic acid solution with this concentration is used as the film-making solution, and it is vacuum degassed at normal temperature for 5 hours. Under the conditions of temperature of 30°C and relative humidity of 50%, the substrate is made of PEO-treated glass plate or mirror stainless steel plate. , scrape the above-mentioned film-making liquid on the substrate to form a liquid film with a thickness of 150 μm, and put it in an oven for imidization after staying for 10 minutes. 200°C and keep it warm for 2 hours, then raise the temperature to 300°C and keep it warm for 5 hours. After imidization, a polyimide film with a thickness of 45 μm was obtained. Put the film together with the substrate into water, b...

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Abstract

The invention provides a polyimide nano fiber composite film which is of a sandwich structure composed of an upper polyimide film layer, a lower polyimide film layer and an intermediate polyamide acid nano fiber film layer. Compared with a common film, the material of the sandwich structure has excellent electrical properties of a polyimide film and has a low dielectric constant and good thermal stability, does not affect the following process and can be used in a flexible printed circuit or other electrical components; and meanwhile, as the polyimide nano fiber composite film has a low dielectric constant, electrical component density improvement and wiring spacing reduction are made possible. In addition, the invention further provides a preparation method and an application of the polyimide nano fiber composite film.

Description

technical field [0001] The invention relates to the technical field of polymer dielectric materials, in particular to a polyimide nanofiber composite film and its preparation method and application. Background technique [0002] With the continuous development of the electronics and microelectronics industry, the large-scale integrated circuit preparation technology has entered below 100nm, the size of electronic and electrical equipment and its components is getting smaller and smaller, and the power is getting bigger and bigger, resulting in an increase in device density and connection density. The reduction of line width increases resistance-capacitance coupling, signal or energy transmission delay, line loss, and interference noise of signals or energy between different lines, and the speed and energy loss caused by resistance-capacitance delay (RCdelay) are greatly increased. Offset the improvement of the performance of large-scale integrated circuits caused by the prog...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K1/02H05K3/00B32B27/08B32B37/00D01D1/02D04H1/728
Inventor 张秀芳李申初方渡飞张宇辉李虎敏赵炯心沈曦
Owner 上海洁晟环保科技有限公司
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