Growing method for polycrystalline silicon carbide thin film

Abstract

The invention provides a growing method for a polycrystalline silicon carbide thin film, and relates to silicon carbide thin films. According to the growing method for the polycrystalline silicon carbide thin film, impurities and defects inside the silicon carbide thin film can be effectively reduced and overcome, the thin film rupture phenomenon caused by large tensile stress in the thin film is avoided, and the quality of the silicon carbide thin film is significantly improved. The growing method for the polycrystalline silicon carbide thin film comprises the steps that 1, a cleaned substrate is fed into a magnetron sputtering apparatus to be sputtered; 2, after sputtering is completed, cooling is conducted, so that an amorphous silicon carbide thin film sample is formed; and 3, after annealing is conducted, the polycrystalline silicon carbide thin film is obtained. A polycrystalline silicon carbide thin film sample is prepared on the aluminum-doped zinc oxide substrate through the magnetron sputtering apparatus. The silicon carbide thin film of uniform dimensions is obtained by controlling growth parameters. The preparation process is simple, the technology is stable, the repeatability is good and toxic or hazardous gases do not need to be used; in addition, the prepared polycrystalline silicon carbide thin film is high in deposition rate and good in compactness. The growing method for the polycrystalline silicon carbide thin film can be applied to the microelectronic industry and the photovoltaic industry and has the advantages of being low in cost, easy to produce in a large scale, free of pollution and the like.

Description

technical field [0001] The invention relates to a silicon carbide film, in particular to a method for growing a polycrystalline silicon carbide film. Background technique [0002] Silicon carbide powder has been widely used as abrasive since 1893. Sintering silicon carbide powder can produce hard ceramic-like silicon carbide particles, which can be used in materials that require high durability, such as automobile brake pads, clutches and bulletproof vests, in materials such as light-emitting diodes, early radio detectors, etc. It is also used in the manufacture of similar electronic devices. As a third-generation semiconductor material, silicon carbide has potential applications in high temperature, high frequency, high power, radiation resistance, and tool coating due to its wide band gap, high thermal conductivity, high critical breakdown electric field, and high hardness. And get the attention of photovoltaic, microelectronics, machinery industry [1-5] . When the dev...

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Problems solved by technology

However, due to high manufacturing costs and some manufacturing process problems, it has been delayed in large-scale industrial application

[0003] At present, the industry mainly uses plasma-enhanced chemical vapor deposition (PECVD) as the preparation method when preparing silicon carbide films, and silane, methane and other gases are the main raw materials. The safety control in the production process is extremely strict and the process is complicated. Silicon carbide thin film has poor structural density

Chinese patent CN101985743A introduces a method of using plasma enhanced chemical vapor deposition (PECVD) to make a silicon carbide film under high temperature conditions, but the silane used is highly toxic and grows slowly

Chinese patent CN101508569 introduces a method of heating a curable silicone composition to make a silicon carbide film under high temperature conditions, but the process is cumbersome and complex and requires a catalyst

Chinese patent CN102304701A introduces a method for preparing silicon carbide film by atomic layer deposition equipment, which can make the grown silicon carbide film structure have a complete lattice, but it needs to use carbon tetrachloride, silane and other toxic and harmful gases, and the growth is slow, high cost

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