Ultra-high-purity carbon nanotube conductive paste and preparation method thereof

A carbon nanotube and ultra-high-purity technology, applied in the field of preparation and modification of nanomaterials, can solve the problem of not seeing carbon nanotubes, etc., and achieve the effects of improving the utilization rate of raw materials, improving the catalytic efficiency, and eliminating potential safety hazards.

Active Publication Date: 2017-03-22
HUAZHONG UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above technical problems, there is no complete, effective and convenient method for preparing carbon nanotubes by the fixed bed method. How to solve the above technical difficulties, design a set of feasible and effective

Method used

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  • Ultra-high-purity carbon nanotube conductive paste and preparation method thereof
  • Ultra-high-purity carbon nanotube conductive paste and preparation method thereof
  • Ultra-high-purity carbon nanotube conductive paste and preparation method thereof

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preparation example Construction

[0042] Another aspect of the present invention provides a method for preparing the above-mentioned ultra-high-purity carbon nanotube conductive paste, which includes the following steps:

[0043] (a) Select a single-sided polished silicon wafer, clean the surface of the silicon wafer and dry it, and deposit a layer of aluminum oxide film on the surface of the silicon wafer by reactive magnetron sputtering, the thickness of the aluminum oxide film is 10nm-60nm , the main component is aluminum oxide;

[0044] (b) using DC magnetron sputtering to deposit a layer of iron thin film catalyst on the surface of the aluminum oxide film, and the thickness range of the iron thin film catalyst is 1nm-3nm;

[0045] (c) Using water-assisted super growth method, the silicon chip with the iron thin film catalyst is put into a tube furnace for annealing, and the iron thin film catalyst on the surface of the silicon chip forms uniform iron nanoparticles, and under the assistance of moisture, th...

Embodiment 1

[0057] (1) Sonicate the silicon wafer polished on one side for 30 minutes in acetone to remove surface organic matter, then sonicate in ethanol for 30 minutes to remove surface particles, and finally dry it with nitrogen. At 25°C, set the RF sputtering power of 200w, the sputtering pressure of 11sccm, the ratio of argon to oxygen at 10, and react for 180s to obtain a 30nm thick aluminum oxide film.

[0058] (2) After reactive magnetron sputtering alumina, at 25°C, set 20w DC sputtering power, 12sccm sputtering pressure, and react for 15s to obtain a 1nm thick iron film.

[0059] (3) At an annealing temperature of 750° C., anneal for 5 minutes, put the silicon wafer with the catalyst system in a tube furnace, anneal the iron film to form uniform nanoparticles, and have a moisture value of 150 ppm and an ethylene flow rate of 100 sccm , under the hydrogen flow rate of 700 sccm, grow for 15 minutes, and generate 100 μm arrayed carbon nanotubes on the surface of iron nanoparticles...

Embodiment 2

[0064] Example 1 was repeated with the same steps described above, the difference being that the sputtering time in step (2) was 20s.

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Abstract

The invention belongs to the field of preparation and modification of nano materials, and particularly discloses ultra-high-purity carbon nanotube conductive paste. A preparation method of the ultra-high-purity carbon nanotube conductive paste comprises the following steps of firstly depositing an aluminum oxide film on the surface of a silicon wafer and sputtering an iron film on the aluminum oxide film; annealing the silicon wafer to which the iron film is attached and obtaining array carbon nanotubes by using a water-assisted super growth method; and finally stripping the carbon nanotubes and dispersing the carbon nanotubes into a solvent N-methylpyrrolidone by using ultrasonic and ball-mixing dispersion method to obtain the ultra-high-purity carbon nanotube conductive paste. The invention further discloses an application of the ultra-high-purity carbon nanotube conductive paste in a lithium battery. The ultra-high-purity carbon nanotube conductive paste is prepared by optimizing a preparation technology of the carbon nanotube, the acidizing graphitization process before the carbon nanotubes are used is reduced, and the paste has more excellent rate capability and cycling stability when used for a positive electrode of a lithium iron phosphate battery.

Description

technical field [0001] The invention belongs to the field of preparation and modification of nanomaterials, and more particularly, relates to an ultra-high-purity carbon nanotube conductive slurry and a preparation method thereof, which can avoid catalyst poisoning and improve the catalytic efficiency of the catalyst. Background technique [0002] Carbon nanotubes are a new conductive agent that has been gradually tried to be applied in recent years. Compared with the previous common conductive agents, such as carbon black, acetylene black, conductive graphite, etc., it has some significant advantages. First, carbon nanotubes have high theoretical electronic conductivity, and the conductivity of purified carbon nanotubes at room temperature exceeds 5 × 10 5 S / m, while the conductivity of carbon black is 10 3 -10 4 between S / m. Secondly, carbon nanotubes have a huge aspect ratio, generally above 1000, and a low addition amount can reach the percolation threshold similar to...

Claims

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Application Information

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IPC IPC(8): H01B1/24H01B13/00H01M4/62
CPCH01B1/24H01B13/00H01M4/62Y02E60/10
Inventor 徐鸣杜轩
Owner HUAZHONG UNIV OF SCI & TECH
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