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High-resistivity monocrystalline ZnO based radiation detection device and preparation method and application thereof

A radiation detector and high resistivity technology, applied in the field of radiation detectors, can solve problems such as difficult to guarantee the stability and reliability of device performance, limit the application of detector devices, weak anti-radiation ability, etc., and achieve good promotion and application prospects , The thickness of the film is uniform and controllable, and the manufacturing process is simple

Active Publication Date: 2017-03-29
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, both silicon and germanium are sensitive to ambient temperature and have weak radiation resistance due to their narrow band gaps, so their use in systems working in space environments is greatly limited.
On the other hand, for compound semiconductors, such as III-V group compounds GaAs, InGaAs, GaN, II-VI group compounds CdTe (energy resolution 0.3%@662keV gamma rays, requires Peltire cooling), CdZnTe, VII-B group II Halogen compounds HgI2, PbI2, TlBr and their ternary compounds HgCdTe, etc. Most of these materials have the disadvantages of low melting point, easy decomposition, and weak radiation resistance. Based on the stability and reliability of the device performance It is difficult to ensure that these problems greatly limit the application of related detection devices in harsh environments such as nuclear power plants and space

Method used

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  • High-resistivity monocrystalline ZnO based radiation detection device and preparation method and application thereof
  • High-resistivity monocrystalline ZnO based radiation detection device and preparation method and application thereof
  • High-resistivity monocrystalline ZnO based radiation detection device and preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] 1. Preparation of high resistivity ZnO single crystal

[0060] (1) In an argon-filled glove box at room temperature, press a 10 cm square high-quality low-resistance zinc oxide wafer into a figure 1 The sequence shown was assembled into a commercial CR 2032 battery case, where the electrolyte used was a 1M LiPF6 solution dispersed in a mixed solution of ethylene carbonate, ethyl methyl carbonate, and diethyl carbonate at a volume ratio of 4:3:3 , using Celgard 2400 polyethylene microporous membrane as the electronic diaphragm.

[0061] The implantation of lithium in the ZnO single crystal was achieved by constant current discharge treatment at room temperature through the LAND BT2013A multi-channel battery test system.

[0062] The thickness of the high-quality low-resistance zinc oxide wafer used in this embodiment is 0.3 mm, the constant current discharge current is set to 3 microamperes, and the discharge time is set to 15 hours.

[0063] (2) Place the lithium-impr...

Embodiment 2

[0075] 1. Prepare a high-resistivity ZnO single crystal, the method is the same as in Example 1.

[0076] 2. Preparation of high-resistivity single-crystal ZnO-based radiation detectors

[0077] Using the thermal / electron beam evaporation method, follow e.g. Figure 4 In the sequence shown, a double-layer metal electrode of 35nm titanium and 20nm gold was evaporated on one side of the high-resistivity ZnO wafer.

[0078] Then a thick metal indium electrode is plated on the other side of the ZnO wafer.

[0079] Both electrodes made good electrical contact.

[0080] The die is bonded to the circuit board using molten indium by heating the device. And the chip is connected to the circuit board by gold wire.

[0081] 3. Test

[0082] The obtained high-resistance ZnO-based detector device is placed in a vacuum, thereby reducing the energy loss of alpha particles during flight. Detector response tests are performed from 243 Am- 244 The Cm dual-energy radiation α-ray source i...

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Abstract

The invention discloses a high-resistivity monocrystalline ZnO based radiation detection device and a preparation method and application thereof. The preparation method comprises the following steps that S1) a high-resistivity monocrystalline ZnO wafer is prepared; S2) metal electrode layers are vapor-plated in the two sides of the high-resistivity monocrystalline ZnO wafer; and S3) the wafer processed by the S2) is combined onto a circuit board, and is connected to the circuit board via a gold thread. The device performance is tested via an alpha source, and the device has effective radiation response. The radiation detection device is prepared by the high-resistivity ZnO material of higher irradiation resistance, wider band gap and higher breakdown electric field intensity, and the device is simple in structure, simple in manufacture technology, low in cost and high in repeatability and quality, and has higher practicality and good popularization and application prospects.

Description

technical field [0001] The invention belongs to the technical field of radiation detectors. More specifically, it relates to a high-resistivity single-crystal ZnO-based radiation detection device and its preparation method and application. Background technique [0002] In many military, national defense, aerospace and other fields, detectors need to have high sensitivity, miniaturization, and strong radiation resistance. Compared with the average radiation energy (~30eV) required by traditional gas radiation detectors to generate detection signals through gas ionization, the average radiation energy required by semiconductor materials to generate a pair of electron-hole pairs is <10eV, so at the same radiation energy Especially for weak signals, the sensitivity of semiconductor materials is higher than that of gases; at the same time, because semiconductor materials are denser than gases, a very thin layer of semiconductor materials (a few microns) can effectively conver...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224H01L31/0296H01L31/08
CPCH01L31/0224H01L31/0296H01L31/085H01L31/1828C30B29/16H01L31/08H01L31/18Y02P70/50
Inventor 黄丰季旭董美严崐
Owner SUN YAT SEN UNIV
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