A preparation method of transparent conductive oxide film-nanowire network

Abstract

The invention relates to a preparation method of a transparent conductive oxide film-nanowire network. The method comprises the steps of (1) growing a transparent conductive oxide film on the surfaceof a clean substrate by using a pulse laser deposition method; (2) taking out the substrate with the transparent conductive oxide film deposited on the surface and depositing a gold catalyst film in aspecified area on the surface of the transparent conductive oxide film; and (3) growing transparent conductive nanowires on the surface of the gold catalyst film by using the pulse laser deposition method. A multistage branching nanowire network is obtained through repeating the steps (2) and (3). The invention provides a method for designing an artificial nanowire network in the micro-nano scale. According to the preparation method, growth of multiple transparent conductive oxide nanowires, including indium tin oxide and fluorine and antimony-doped tin oxide, in the specified area of the transparent conductive substrate can be achieved, and self-assembled growth, including branching growth in each step, of the nanowires can be finely adjusted.

Description

technical field [0001] The invention belongs to the field of photoelectric technology and new energy materials, and in particular relates to a method for preparing a transparent conductive oxide film-nanowire network. Background technique [0002] Transparent conductive oxides (TCO), represented by indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and antimony-doped tin oxide (ATO), have both visible light transmittance, electrical conductivity and good Thermal and chemical stability, in the field of optoelectronics such as transparent display, touch screen, light-emitting diodes, construction fields such as smart windows, energy conversion fields such as solar photovoltaic devices, photolysis of water to produce hydrogen, and lithium / sodium ion batteries, supercapacitors and other energy There are important applications in the field of storage. The cost-effective advantages of transparent conductive oxide thin films have also promoted the rapid development of related ...

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Problems solved by technology

Although in a special ITO system, In-Sn alloy can be used as a catalyst to self-catalyze the growth of ITO nanowires, and since the gaseous In-Sn source acts as both the source of nanowire growth and the catalyst particles, it can be used in a single growth Branched ITO nanowire structures were observed, such as by electron beam evaporation [Journal of AppliedPhysics, 83(1995)1998], molecular beam epitaxy [Nature Nanotechnology 4(2009) 239], pulsed laser deposition [Materials Letters66(2012) 280 ] methods have obtained bifurcated ITO nanowires, but self-catalysis growth has the following disadvantages: First, self-catalysis cannot independently control the position and size of the catalyst, so it is not easy to control the growth area of ​​the nanowires (the entire substrate will be growth) and the length of the main and bifurcated nanowires (in parallel); secondly, in order to ensure that the In-Sn liquid alloy can continuously guide the growth of the nanowires, the growth of the ITO nanowires needs to be at a lower oxygen partial pressure (to prevent In-Sn Oxidation into a solid state), there are many oxygen defects in nanowires; third, self-catalysis is only applied in a few systems, and other transparent conductive oxides FTO and ATO cannot be applied

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