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Pressure sensor based on organic field effect transistor and preparation method thereof

A pressure sensor and effect tube technology, which is applied in the field of organic field effect tube-based pressure sensors and their preparation, can solve problems such as environmental pollution and complex manufacturing processes, and achieve the effects of excellent adsorption performance, improved adhesion, and improved pressure sensing response.

Active Publication Date: 2018-06-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the current organic field effect tube pressure sensor is complicated in manufacturing process and the materials used cause pollution to the environment, and to provide an organic field effect tube pressure sensor using a bio-mixed material dielectric layer and a bio-material doped semiconductor layer. Sensor and its preparation method

Method used

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  • Pressure sensor based on organic field effect transistor and preparation method thereof
  • Pressure sensor based on organic field effect transistor and preparation method thereof
  • Pressure sensor based on organic field effect transistor and preparation method thereof

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preparation example Construction

[0040] A preparation method based on an organic field effect tube pressure sensor, comprising the steps of:

[0041] Step 1. Clean the substrate with detergent, acetone solution, deionized water and isopropanol solution, and dry it with nitrogen after cleaning;

[0042]Step 2, by a method in vacuum thermal evaporation, magnetron sputtering, plasma-enhanced chemical vapor deposition, screen printing, printing and spin coating, metal nanowire grid electrodes, metal nanowires are prepared on the substrate surface For iron nanowires, copper nanowires, silver nanowires, gold nanowires, aluminum nanowires, nickel nanowires, cobalt nanowires, manganese nanowires, cadmium nanowires, indium nanowires, tin nanowires, tungsten nanowires and platinum one of the nanowires;

[0043] Step 3, ultrasonically mix bamboo cellulose and biodielectric material in proportion, and pass the mixed bamboo cellulose and biodielectric material solution through one of spin coating, roller coating, drop fi...

Embodiment 1

[0049] A pressure sensor based on an organic field effect tube, such as figure 1 The bottom-gate-top-contact structure is shown. The material and thickness of each layer are as follows: the gate electrode, source electrode and drain electrode are all silver nanowires, and the dielectric layer is made of a mixed material of bamboo cellulose and gelatin, with a thickness of 200nm. Bamboo cellulose accounts for 60%, the semiconductor layer is formed by mixing indigo and bamboo fiber (10%), the thickness is 50nm, and the shellac encapsulation layer has a thickness of 300nm. A field-effect transistor pressure sensor with high sensitivity and high stability can be realized with this structure, and its preparation method is as follows:

[0050] 1. Clean the substrate with detergent, acetone solution, deionized water and isopropanol solution, and dry it with nitrogen after cleaning;

[0051] 2. Preparation of silver nanowire grid electrodes on the surface of the substrate;

[0052] ...

Embodiment 2

[0057] Such as figure 1 The bottom gate top contact structure is shown, the material and thickness of each layer are: the gate electrode, source electrode and drain electrode are all gold nanowires, the dielectric layer is made of a mixed material of bamboo cellulose and silk protein, and the thickness is 500nm. Wherein the bamboo cellulose accounts for 70%, the semiconductor layer is composed of carotene and bamboo fiber (50% in content), the thickness is 70nm, and the thickness of the shellac encapsulation layer is 200nm. A field-effect transistor pressure sensor with high sensitivity and high stability can be realized with this structure, and its preparation method is as follows:

[0058] 1. Clean the substrate with detergent, acetone solution, deionized water and isopropanol solution, and dry it with nitrogen after cleaning;

[0059] 2. Preparation of gold nanowire grid electrodes on the surface of the substrate;

[0060] 3. Ultrasonic mixing of bamboo cellulose and silk...

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Abstract

The invention discloses a pressure sensor based on an organic field effect transistor and a preparation method thereof. The pressure sensor based on the organic field effect transistor comprises a substrate arranged at the lowest layer, wherein a gate electrode is arranged on the surface of the substrate, a dielectric layer is arranged on the upper surface of the substrate and the gate electrode,a semiconductor layer is arranged on the upper surface of the dielectric layer, a source electrode and a drain electrode are arranged on the semiconductor layer respectively, and an encapsulation layer is also arranged on the substrate and wraps the gate electrode, the dielectric layer, the semiconductor layer, the source electrode and the drain electrode inside, wherein the dielectric layer is made from a mixed material of bamboo cellulose and a biological dielectric material, content of bamboo cellulose is 50-75%, the semiconductor layer is made from a mixed material of bamboo fibers and a soluble biological semiconductor material, and cellulose content is 5-15%. The pressure sensor disclosed by the invention has the advantages that the bamboo cellulose can detect pressure with high sensitivity and high response, the dielectric layer doped with the bamboo cellulose and an organic semiconductor layer enable device stability to be higher and the pressure sensor device to be more environment-friendly, the preparation method and technology are easy to realize, a biological material functional layer can be well compatible, and environmental pollution in a preparation process is reduced.

Description

technical field [0001] The invention belongs to the technical field of pressure sensors, and in particular relates to a pressure sensor based on an organic field effect tube and a preparation method thereof. Background technique [0002] The application fields of sensors are very broad. It can be said that from space to the ocean, from various complex engineering systems to people's daily necessities of life, all kinds of sensors are inseparable. Sensing technology plays an increasingly important role in the development of the national economy. Huge effect. Among them, pressure sensors are widely used in water conservancy, astronomy, meteorology, chemical industry, and medical and health industries because they can detect pressure, acceleration, height, flow rate, pressure, etc. Compared with traditional resistive devices, organic field-effect transistor pressure sensors have the advantages of high sensitivity, room temperature operation, easy integration, and independent m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14G01L1/16H01L41/113H01L41/22H01L51/05H10N30/01H10N30/30
CPCG01L1/14G01L1/16H10N30/302H10N30/01H10K10/00
Inventor 于军胜庄昕明张大勇侯思辉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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