Preparation method of photo anode material of battery prepared through photocatalytic decomposition of water into hydrogen
A technology of photolysis of water to produce hydrogen and photoanode, applied in the direction of electrodes, nanotechnology for materials and surface science, electrode shape/type, etc., can solve the problems of limited photoelectric conversion efficiency, limited surface area, low photocatalytic activity, etc. , to achieve the effects of good diffusion, good size uniformity and large specific surface area
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[0035] Example 1
[0036] A preparation method of photoanode material for photohydrogen production battery. Firstly, InP wafer is used as the substrate, and the copper source and carboxylic acid are Cu 2 The precursor of O is prepared by electrochemical anodic etching and wet etching to prepare a one-dimensional InP nanopore array, and then using the one-dimensional InP nanopore array as a template, the Cu is deposited by electrochemical deposition. 2 O nanoparticles are loaded in the InP nanopore array to construct InP / Cu 2 O nanoheterojunction array composite structure.
[0037] Such as figure 1 As shown, InP / Cu 2 The preparation of O nano-heterojunction arrays can be divided into two steps. First, the two-step etching method is used to prepare the ordered InP nanohole array, and then the InP / Cu is constructed by electrochemical deposition technology. 2 O nano heterojunction array.
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[0038] Example 2
[0039] A preparation method of photoanode material for photodegradation of water for hydrogen production, the steps are as follows:
[0040] (1) Cut the n-InP wafer into samples of the same size, and then put the cut InP samples in acetone and absolute ethanol for ultrasonic cleaning for more than 5 minutes to remove the oil on the surface of the InP samples, and then use deionized water Rinse the InP sample three times, then dry it for later use;
[0041] (2) Use the DC magnetron sputtering method to sputter the indium film on the back of the InP sample in step 1, and then put the InP sample in a completely dried quartz boat, and place it in a chemical vapor deposition furnace with a controlled heating rate. N 2 In an atmosphere, the temperature is increased at a rate of 2 to 5°C / minute and maintained at 350°C for 1 minute to form a good ohmic contact between the InP and the indium film, and then the InP sample is placed on the back side with a high-purity conduc...
Example Embodiment
[0052] Example 3
[0053] A preparation method of photoanode material for photodegradation of water for hydrogen production, the steps are as follows:
[0054] (1) Cut the n-InP wafer into samples of the same size, and then put the cut InP samples in acetone and absolute ethanol for ultrasonic cleaning for more than 5 minutes to remove the oil on the surface of the InP samples, and then use deionized water Rinse the InP sample three times, then dry it for later use;
[0055] (2) Use the DC magnetron sputtering method to sputter the indium film on the back of the InP sample in step 1, and then put the InP sample in a completely dried quartz boat, and place it in a chemical vapor deposition furnace with a controlled heating rate. N 2 In the atmosphere, the temperature is increased at a rate of 2-5°C / minute and maintained at 350°C for 1 minute to form a good ohmic contact between the InP and the indium film. Then use high-purity conductive silver paste to connect the back of the InP s...
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