Double-gate organic thin film transistor and preparation method thereof

Abstract

The invention belongs to the field of organic thin film transistor preparation, and particularly discloses a double-gate organic thin film transistor and a preparation method thereof. The preparationmethod comprises the steps of: preparing a bottom gate electrode, a bottom gate dielectric layer and an active layer on a substrate in order; adopting an electrofluid jet printing process to perform jet print of a polymer with dielectric properties on the active layer to obtain a plurality of polymer fibers with circular sections, and forming a latticed fiber array on the active layer; then performing hot stamping of the latticed fiber array to change the sections of the polymer fibers from the circular shape to an oval shape; and preparing a metal conductive film on the active layer and the latticed fiber array to form a top gate electrode, and finally coating a conductive medium on the top gate electrode in a dripping manner to lead out the conductive medium, thereby completing the preparation of the double-gate organic thin film transistor. The double-gate organic thin film transistor and the preparation method thereof combine the electrofluid jet printing process and the hot stamping process, get rid of the dependence of the traditional complex processes such as masking, photoetching and the like on precise instruments, and ensure the performance and the quality of the prepareddouble-gate organic thin film transistor.

Description

technical field [0001] The invention belongs to the field of preparation of organic thin film transistors, and more specifically relates to a double-gate organic thin film transistor and a preparation method thereof. Background technique [0002] Organic thin-film transistor (OTFT) is the key driving electronic component of the next generation of display technology and multifunctional sensors in the future, and it is one of the research hotspots in the field of organic semiconductor materials and functional devices. Organic thin-film transistors can be divided into single-gate organic thin-film transistors and double-gate organic thin-film transistors according to the difference between the gate electrodes. Compared with single-gate organic thin-film transistors, double-gate organic thin-film transistors can significantly improve the organic thin-film transistors. Many performance parameters such as carrier mobility and switch ratio have the advantages of faster actual opera...

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Problems solved by technology

Patent CN102222770A discloses a method for preparing an organic thin film transistor using near-field electrofluid electrospinning technology, that is, a submicron fiber of an organic water-soluble material is spray-printed at the groove position on the substrate, and the cured fiber can just make the source The electrode and the drain electrode are blocked and separated, and then the submicron fiber is dissolved to obtain an organic thin film transistor; although this method simplifies the preparation process of the thin film transistor, in the process of removing the water-soluble fiber, the solvent for dissolving the fiber It will also cause damage to semiconductor materials; the patent CN105742500A discloses a method of directly obtaining a grid-shaped fiber layer prepared by an electrofluid direct writing process, so that an organic film with a circular cross-section of the gate dielectric layer can be directly obtained The transistor structure avoids the problems of traditional process methods such as photolithography and etching; however, this method has extremely strict requirements on the fiber cross-sectional size in the fiber manufacturing process. , so that the height of the top gate dielectric layer is too high, the capacitance effect is extremely poor, and the performance of the transistor cannot be displayed, and if the fiber circular cross-sectional size is controlled in a small range (such as: nanoscale), the fiber height and the source electrode and drain electrode film If the thickness is close, it can not play the role of source electrode and drain electrode patterned mask, then it cannot form an effective transistor channel, and it is more difficult to prepare an organic thin film transistor device with a double gate structure.

[0005] In summary, double-gate organic thin film transistors can be prepared layer by layer using traditional photolithography, etching and other processes, but are limited by the alignment accuracy and the impact of chemical reagents on the destruction of organic semiconductor materials during the process; and The existing electrofluid printing technology has the disadvantage of extremely low yield and cannot guarantee the performance of double-gate organic thin film transistors. Therefore, a more advanced double-gate organic thin film transistor preparation process is urgently needed for future industrial applications

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