ZnMgO ultraviolet detector and preparation method thereof

A technology of ultraviolet detectors and interdigitated electrodes, which is applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of unstable devices, poor performance, high dark-state current, etc., and reach the absorption cut-off edge Steep, flat surface, low dark current effect

Inactive Publication Date: 2020-06-05
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the Mg component in the ZnMgO material is low, although the crystal structure is close to a single hexagonal phase, and the optical absorption cut-off edge is close to the near-ultraviolet band, the dark state current of the device prepared from the material is high, and the device is not stable when exposed to air. , the performance deteriorates after being placed for a long time, which has become an important shackle in the application of ultraviolet detectors

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  • ZnMgO ultraviolet detector and preparation method thereof
  • ZnMgO ultraviolet detector and preparation method thereof
  • ZnMgO ultraviolet detector and preparation method thereof

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preparation example Construction

[0091] The present invention also provides a kind of preparation method of ZnMgO ultraviolet detector, comprises the following steps:

[0092] 1) Under the condition of excess oxygen, after the organic zinc source and the organic magnesium source are carried out chemical vapor deposition on the heating substrate, the substrate with ZnMgO thin film is obtained;

[0093] 2) On the ZnMgO film obtained in the above steps, an interdigitated electrode mask is first formed, and then a metal layer is formed, and then the mask is removed to form an interdigitated electrode layer;

[0094] 3) Composite the polymer layer on the interdigitated electrode of the interdigitated electrode layer obtained in the above steps, and press In particles on the non-interdigitated electrodes to obtain the ZnMgO ultraviolet detector.

[0095] In the above-mentioned preparation method of the present invention, the structure, composition, parameters and optimization principles of the ZnMgO ultraviolet det...

Embodiment 1

[0115]Put the cleaned sapphire substrate into the MOCVD growth chamber, adjust the growth temperature to 500°C, and the pressure to 2x10 3 Pa. Diethyl zinc was used as the zinc source, dimethylmagnesocene was used as the magnesium source, the carrier gas flow rate of the zinc source was 10 sccm, and the carrier gas flow rate of the magnesium source was 1 sccm. The flow rate of oxygen is 200 sccm, which is much greater than the flow rate of zinc source and magnesium source. After growing for 2 hours, turn off the organic source and oxygen, and lower the substrate temperature to room temperature at 0.2°C / s to obtain a ZnMgO thin film.

[0116] On the ZnMgO thin film material, 50 pairs of interdigitated electrode masks with a pitch of 10 μm and a length of 500 μm were formed using negative resist lithography. The obtained sample was put into a small coating machine, and metal gold was sputtered under the condition of a pressure of 4Pa and a current of 8mA. The colloidal mask i...

Embodiment 2

[0134] Put the cleaned sapphire substrate into the MOCVD growth chamber, adjust the growth temperature to 700°C, and the pressure to 2x10 3 Pa. Diethyl zinc was used as the zinc source, dimethylmagnesocene was used as the magnesium source, the carrier gas flow rate of the zinc source was 10 sccm, and the carrier gas flow rate of the magnesium source was 1 sccm. The flow rate of oxygen is 200 sccm, which is much greater than the flow rate of zinc source and magnesium source. After growing for 2 hours, turn off the organic source and oxygen, and lower the substrate temperature to room temperature at 0.2°C / s to obtain a ZnMgO thin film.

[0135] The ZnMgO thin film prepared in Example 2 of the present invention was characterized.

[0136] see Figure 7 , Figure 7 The SEM scanning electron micrograph of the surface morphology of the ZnMgO thin film prepared in Example 2 of the present invention.

[0137] Depend on Figure 7 It can be seen that the ZnMgO thin film prepared b...

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Abstract

The invention provides a ZnMgO ultraviolet detector. The ZnMgO ultraviolet detector comprises a substrate, a ZnMgO thin film layer which is compounded on the substrate, an interdigital electrode layerwhich is compounded on the ZnMgO thin film layer, and a polymer layer which is compounded on the surface of the interdigital electrode of the interdigital electrode layer. According to the ZnMgO ultraviolet detector with the specific structure, which is provided by the invention, the advantages of the ZnMgO thin film layer are fully exerted through the cooperation and sequence of all the layers,so that the ZnMgO ultraviolet detector prepared by the invention has relatively low dark current and good device stability; and the preparation method provided by the invention has the advantages of simple steps, mild conditions, good repeatability and controllable process, and is beneficial to large-scale popularization and application.

Description

technical field [0001] The invention belongs to the technical field of semiconductor ultraviolet detection, relates to a ZnMgO ultraviolet detector and a preparation method thereof, in particular to a ZnMgO thin film ultraviolet detector with a single hexagonal phase crystal structure with a steep absorption cut-off edge and a preparation method thereof. Background technique [0002] Solar radiation is one of the energy sources for maintaining human daily activities. Although ultraviolet light only accounts for 7% of the solar spectrum, it plays a very important role in human life. In recent years, due to the aggravation of the destruction of the ozone layer in the atmosphere, the ultraviolet radiation on the earth's surface has gradually increased. Excessive ultraviolet radiation can cause skin cancer, cataracts, and the reduction of immune system functions. It can also reduce crop production and cause a series of environmental problems. Therefore, the detection technology ...

Claims

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Application Information

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IPC IPC(8): H01L31/0296H01L31/036H01L31/108H01L31/18
CPCH01L31/02966H01L31/036H01L31/1085H01L31/1832Y02P70/50
Inventor 刘可为侯其超陈星张振中李炳辉申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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