Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving quality of perovskite thin film through solvent bath assisted heat treatment

A perovskite and thin-film technology, applied in coatings, photovoltaic power generation, electrical components, etc., can solve problems that restrict the promotion and application of heat treatment methods, difficult control of steam concentration, decomposition of perovskite materials, etc., and achieve heat treatment process optimization, Effect of improving crystal quality, reducing surface defects and component segregation

Inactive Publication Date: 2020-09-04
NORTHWESTERN POLYTECHNICAL UNIV
View PDF14 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, although there have been steam-assisted heat treatment methods such as polar solvents and ammonium halide salts to improve the quality of perovskite films, these methods are difficult to control the steam concentration, uneven distribution of steam, and excessive steam leads to decomposition of perovskite materials. Problems restrict the popularization and application of these heat treatment methods

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving quality of perovskite thin film through solvent bath assisted heat treatment
  • Method for improving quality of perovskite thin film through solvent bath assisted heat treatment
  • Method for improving quality of perovskite thin film through solvent bath assisted heat treatment

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0031]The concentrations of cesium iodide, formamidine iodide, methylamine bromide, lead bromide and lead iodide were respectively 0.07mol / L, 1.19mol / L, 0.21mol / L, 0.21mol / L and 1.29mol / L It is dissolved in a mixed solvent of dimethylformamide and dimethyl sulfoxide, and the volume ratio of the two solvents is 4:1. After stirring and dissolving, take 50 μL of perovskite solution and drop it evenly on the pre-deposited SnO 2 The transparent conductive glass surface of the electron transport layer was spin-coated at a speed of 5000 rpm for 30 seconds, and 100 μL of chlorobenzene was rapidly added 15 seconds before the end of the final spin-coating. After spin-coating, the glass sheet was placed on a heating table at 100°C for 30 minutes to obtain a perovskite film.

[0032] A mixed solvent of chlorobenzene and dimethylformamide was prepared, wherein the volume content of dimethylformamide was 1%, and it was stored in an open container with a lid. The perovskite film prepared b...

Embodiment 2

[0036] Both methylamine iodide and lead iodide were dissolved in a mixed solvent of dimethyl sulfoxide and γ-butyrolactone at a concentration of 1.3 mol / L, and the volume ratio of the two solvents was 3:7. After stirring and dissolving, take 40uL perovskite solution and drop it evenly on the pre-deposited SnO 2 The transparent conductive glass surface of the electron transport layer was spin-coated at a speed of 5000 rpm for 30 seconds, and 200 uL of toluene was rapidly added 15 seconds before the end of the final spin-coating. After spin coating, place the glass slide on a heating table at 100 °C for 40 min to obtain MAPbI 3 Perovskite thin films.

[0037] A mixed solvent of toluene and acetonitrile was prepared, wherein the volume content of acetonitrile was 2%, and it was stored in an open container with a lid. The perovskite film prepared by the above method is immersed in the prepared mixed solvent, so that the mixed solvent completely immerses the surface of the perovs...

Embodiment 3

[0039] The cesium iodide, lead bromide and lead iodide were dissolved into the dimethyl sulfoxide solution at the concentrations of 0.6 mol / L, 0.6 mol / L and 1.2 mol / L, respectively. After stirring and dissolving at 60 °C, 40uL of perovskite solution was taken and dropped evenly on the pre-deposited SnO. 2 The transparent conductive glass surface of the electron transport layer was spin-coated at 500 rpm and 2500 rpm for 3 s and 30 s, respectively. After spin-coating, heating at 42 °C for 4 min and 160 °C for 30 min was continuously performed to obtain CsPbI. 2 Br perovskite thin films.

[0040] A mixed solvent of diethyl ether and dimethyl sulfoxide is prepared, wherein the volume content of dimethyl sulfoxide is 0.5%, and it is stored in an open container with a lid. The perovskite film prepared by the above method is immersed in the prepared mixed solvent, so that the mixed solvent completely immerses the surface of the perovskite film, and then the open container is tight...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
conversion efficiencyaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for improving the quality of a perovskite thin film through solvent bath assisted heat treatment, and belongs to the technical field of new materials. The method comprises the following steps: firstly, preparing a perovskite thin film by adopting a spin-coating method; then, immersing the perovskite thin film in a mixed solvent of a polar solvent and a non-polar solvent, wherein the volume ratio of the polar solvent is 0.1%-10%; and finally, heating the mixed solvent in which the perovskite thin film is placed to 80-200 DEG C, keeping the temperature for 10-120minutes, taking out the perovskite thin film from the mixed solvent after the perovskite thin film is naturally cooled after heat preservation, cleaning the perovskite thin film with a non-polar solvent, blow-drying the perovskite thin film with inert gas, and placing the perovskite thin film on a heating table to heat and dry the perovskite thin film, thereby finally obtaining the improved perovskite thin film. The method can also be used for improving the surface characteristics of perovskite single crystals or microcrystals, reducing surface defects and component segregation and obtaininghigh-quality perovskite crystal surfaces.

Description

technical field [0001] The invention belongs to the technical field of new materials, and in particular relates to a method for improving the quality of perovskite thin films by solvent bath-assisted heat treatment. Background technique [0002] Metal halide perovskite material is a new type of optoelectronic functional material, which can be prepared by solution method at low temperature and has excellent optoelectronic properties, such as high light absorption coefficient, fewer defects, long carrier lifetime, etc., and is expected to be applied. It is widely used in solar cells, photoelectric sensors, radiation sensors, light-emitting diodes, semiconductor lasers and many other fields. [0003] At present, perovskite materials used to fabricate optoelectronic devices are usually polycrystalline thin films prepared by solution methods. The solution preparation methods for preparing perovskite thin films usually include one-step and two-step methods. The one-step method u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42C03C17/34
CPCC03C17/34C03C2217/211C03C2218/116C03C2218/32H10K71/12H10K85/30H10K30/00Y02E10/549Y02P70/50
Inventor 李祯杨磊李志浩郅冲阳刘萃丁晓刚
Owner NORTHWESTERN POLYTECHNICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com