Room temperature wide-spectrum photodetector based on two-dimensional cobalt selenide thin film and preparation method
A technology of photodetector and cobalt selenide, which is applied in the field of photoelectric detection at room temperature, can solve problems such as device instability and material oxidation, and achieve the effects of low cost, accelerated preparation, and stable room temperature environment
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Embodiment 1
[0029] Chemical vapor deposition growth of two-dimensional cobalt selenide thin film on silicon dioxide-silicon substrate, the specific steps are:
[0030] 1. Substrate cleaning: take a 300-nanometer silicon dioxide-silicon substrate as a growth substrate, place the substrate in an acetone solution with a concentration of 99.5%, and place it in isopropanol with a concentration of 99.5% after ultrasonic cleaning for 30 minutes The solution was ultrasonically cleaned for 30 minutes and then placed in deionized water. After ultrasonic cleaning for 30 minutes, it was taken out and blown dry with a nitrogen gun. A 5 nm cobalt film was deposited on the cleaned substrate at a rate of 2.5 nm / min by double ion beam deposition. The steps were as follows: (1) Stick the cleaned silica-silicon substrate on the On the metal sheet, open the vent valve, open the cavity, place the cobalt target and the metal sheet in the corresponding positions in the cavity, close the plate and the cavity; (2...
Embodiment 2
[0034] The chemical vapor deposition growth of two-dimensional cobalt selenide thin film on a sapphire substrate, the specific steps are:
[0035] 1. Substrate cleaning: take the sapphire substrate as a growth substrate, place the substrate in an acetone solution with a concentration of 99.5%, place it in an isopropanol solution with a concentration of 99.5% after ultrasonic cleaning for 30 minutes, and ultrasonically clean it for 30 minutes. After 30 minutes, it was placed in deionized water, and after 30 minutes of ultrasonic cleaning, it was taken out and blown dry with a nitrogen gun. A 3-nanometer cobalt film was deposited on the cleaned substrate at a rate of 2.5 nm / min by double ion beam deposition. The steps were as follows: (1) Stick the cleaned sapphire substrate on the Open the air valve, open the cavity, place the cobalt target and the metal sheet in the corresponding positions in the cavity, close the baffle plate and the cavity; (2) close the air release valve, s...
Embodiment 3
[0039] The preparation of two-dimensional cobalt selenide film-based room temperature wide-spectrum photodetector, taking the two-dimensional cobalt selenide film prepared in Example 1 as an example, the specific steps are as follows:
[0040] 1) Spin-coat polymethyl methacrylate on a silicon dioxide-silicon substrate with a cobalt selenide film using a spin coater at a rotational speed of 4000 rpm and a spin-coating time of 40 seconds;
[0041] 2) Place the coated polymethyl methacrylate cobalt selenide film substrate on the heating table to cure for 5 minutes, and the curing temperature is 150 degrees Celsius;
[0042] 3), using the electron beam exposure method to pattern the electrode on the solidified cobalt selenide thin film substrate;
[0043] 4) Put the exposed sample into the developing solution for 10-30 seconds, then put the developed sample into isopropyl alcohol to remove the developing solution, and then blow it dry with a nitrogen gun, and the electrode pattern...
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