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Method for preparing high-performance near-infrared perovskite thin film in air

A technology of perovskite and perovskite precursor, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of increasing cost, reducing the stability of luminous efficiency, and poor stability of perovskite, achieving Good stability, increased fluorescence intensity, and high fluorescence intensity

Pending Publication Date: 2022-05-10
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the poor stability of perovskite in the air, the working time of the device is much lower than that of similar products, such as silicon-based solar cells, OLEDs, etc.
[0006] (3) Most of the large-scale semiconductor processes are carried out in the air environment. If perovskite is introduced into commercial mass production, under the current conditions, if you want to obtain high-quality perovskite optoelectronic devices, you need to place the entire production line in nitrogen. In the environment, this undoubtedly increases the cost of commercialization, that is to say, it is imperative to prepare efficient and stable perovskite films in the air
However, the perovskite film prepared directly in the air without any treatment, compared with the film prepared in the glove box, both the luminous efficiency and stability will be greatly reduced. In a high humidity environment, the perovskite film prepared in the air The luminous intensity of the film is even only one-tenth of that prepared in the glove box

Method used

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  • Method for preparing high-performance near-infrared perovskite thin film in air
  • Method for preparing high-performance near-infrared perovskite thin film in air
  • Method for preparing high-performance near-infrared perovskite thin film in air

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Embodiment 1: under the condition of air humidity 40%, prepare perovskite film as follows:

[0046] Step 1: Prepare a square p-type silicon substrate with a size of 1cm×1cm, clean it with RCA cleaning method, and then dry it.

[0047] The second step: 48mg of methylamine iodide (CH 3 NH 3 I,MAI) and 138mg of PbI 2 The powder was dissolved in a mixed solution of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) at a volume ratio of 9:1, in which DMF was 635 μl and DMSO was 72 μl, and ultrasonically It dissolves rapidly, and the resulting methylamine lead iodide (CH 3 NH 3 PB 3 ,MAPbI 3 ) The concentration of the perovskite precursor solution is 0.3M.

[0048] Step 3: Add 0.5 mg of tetrabutylamine hexafluorophosphate (TBAPF-6) and 100 μl of 2% polymethyl methacrylate (PMMA) chlorobenzene solution into 1 ml of ethyl acetate, and stir by magnetic force Or ultrasonically mix them uniformly, and the doping concentrations of the obtained solutions are respectiv...

Embodiment 2

[0053] Embodiment 2: under the condition of air humidity 70%, prepare perovskite film as follows:

[0054] Step 1: Prepare a square ITO conductive glass substrate with a size of 1cm×1cm, clean it with RCA cleaning method, and then dry it.

[0055] The second step: 112mg of methyl ammonium bromide MABr and 367mg of PbBr 2 The powder was dissolved in a mixed solution of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) at a volume ratio of 9:1, in which DMF was 635 μl and DMSO was 72 μl, and ultrasonically It dissolves quickly, and the resulting methylamine lead bromide (CH 3 NH 3 PbBr 3 ,MAPbBr 3 ) The concentration of the perovskite precursor solution is 1M.

[0056] Step 3: Add 0.5 mg of tetrabutylammonium hexafluorophosphate and 100 μl of 2% PMMA chlorobenzene solution into 1 ml of ethyl acetate, and mix them uniformly by magnetic stirring or ultrasound, and the doping concentration of the resulting solution They are: tetrabutylamine hexafluorophosphate 0.5mg / m...

Embodiment 3

[0061] Embodiment 3: all the other are identical with embodiment 1, and difference is: prepare perovskite film under the condition of air humidity 60%, p-type silicon substrate can be arbitrarily replaced by FTO conductive glass, n-type silicon, One of silicon dioxide, flexible substrates such as PET or PEN materials, or graphene, none of this substitution affected the final perovskite crystal formation. Figure 9 For undoped MAPbI deposited on different substrates 3 perovskite thin film.

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Abstract

The invention discloses a method for preparing a high-performance near-infrared perovskite thin film in air. The method comprises the following four steps: (1) preparing a perovskite precursor solution; (2) doping and preparing an anti-solvent; (3) spin-coating perovskite on a substrate by using a spin-coating method; the general formula of the perovskite material is ABX3, A is a monovalent cation, B is a divalent metal cation, and X is a halogen anion; tetrabutylamine hexafluorophosphate (TBAPF-6) and polymethyl methacrylate (PMMA) are mixed and doped in an anti-solvent, and the two materials are co-doped, so that the fluorescence intensity of the perovskite thin film can be improved to 15 times of that of an untreated perovskite thin film under the condition that the air humidity is 40%.

Description

technical field [0001] The invention relates to the technical field of photoluminescence, in particular to a method for preparing a high-performance near-infrared perovskite film in air. Background technique [0002] Perovskite is a highly efficient luminescent material. It has excellent properties such as high color purity, tunable emission wavelength covering the entire visible light region, and ultra-high photoluminescence quantum yield. It is widely used in the field of optoelectronic devices by researchers, and It has the advantages of high performance and easy preparation. [0003] However, the current perovskite active layer, which is the core of perovskite photoelectric devices, has the following problems: [0004] (1) The perovskite active layer is very sensitive to water vapor and oxygen, and will degrade when exposed to humid air for a long time. Therefore, almost all perovskite thin films are prepared in a nitrogen atmosphere glove box, which undoubtedly increa...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/12H10K71/40H10K85/30H10K30/00Y02E10/549
Inventor 徐骏许筱晓肖科朱挺朱钰陈坤基
Owner NANJING UNIV
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