Polymer semi-conductive photoresist with side chain containing azide group as well as preparation method and application of polymer semi-conductive photoresist
A polymer and group technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, photosensitive materials for optomechanical equipment, etc., can solve the problem of lack of semiconducting photoresist and achieve excellent carrier transport Performance and solubility characteristics, efficient cross-linking reaction, convenient and easy-to-obtain raw materials
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Embodiment 1
[0062] Synthesis of compound shown in formula II (in its formula II, R 1 is 2-decyltetradecyl, N 3 group at the end of the alkyl side chain)
[0063]
[0064] Concrete reaction step condition is as follows:
[0065] chemical reaction flow chart figure 1 shown. Dissolve compound 1 (0.96mmol) in 30mL DMF, add compound 2NaN 3 (3.83mmol), reacted at room temperature for 7 hours, and stopped the reaction. Multiple extractions were performed with copious amounts of water and dichloromethane. The organic phase was removed by rotary evaporation, and the product 3 (0.48mmol, yield: 49.9%) was obtained by separation with a silica gel column; the structural confirmation data were as follows: 1 H NMR (400MHz, CDCl 3 ): δ=8.63(d, J=4.4Hz, 2H), 7.22(d, J=4.0Hz, 2H), 3.92(d, J=8.0Hz, 4H), 3.25(t, J=6.8Hz, 4H ), 1.88(m,2H), 1.60-1.55(m,4H), 1.30-1.21(m,76H), 0.88(t,6H); HR-MS: Calculated for C 62 h 101 Br 2 N 8 o 2 S 2 (M + ): 1211.5850, mass spectrum peak: 1211.5858.
Embodiment 2
[0067] The synthesis of polymkeric substance shown in formula I (wherein, R 1 with R 2 is 2-octyldodecyl, N 3 group at R 1 The end of the alkyl main chain; Ar is a substituent of dithiophene; when x:y=1:0, the defined polymer is PDPP4T-N 3 ):
[0068]
[0069] chemical reaction flow chart figure 2 As shown, the product 3 (0.050mmol) obtained in Example 1 of the present invention and 5,5'-bis(trimethylstannyl)-2,2'-bithiophene 4 (0.050mmol) were dissolved in anhydrous toluene , blow nitrogen for 10 minutes, add 1.48 μmol of catalyst tris(dibenzylideneacetone) dipalladium and 5.93 μmol of ligand o-tricresylphosphine, react at 100°C for 3 hours under the protection of nitrogen, then cool to room temperature, and the reaction system Poured into 100mL methanol, precipitated solid, filtered. The obtained solid was removed by a Soxhlet extractor with methanol, n-hexane and acetone in order to remove the catalyst, unreacted raw materials and oligomers, and finally the target...
Embodiment 3
[0071] The specific steps for realizing patterning based on the polymer described in Formula I of the present invention are: the PDPP4T-N prepared in Example 2 of the present invention 3 Polymer (structural formula such as Figure 5 shown in ) dissolved in chloroform solution at room temperature, wherein PDPP4T-N 3 The concentration is 3 mg / ml. Then, the solution was spin-coated on the silicon wafer by a homogenizer at a speed of 3000 rpm, and the film thickness was about 20 nanometers. Then cover the mask plate on the film, and irradiate it with a 365-nanometer ultraviolet LED lamp for 400 seconds, and the lamp power is 85 milliwatts per square centimeter. Then soak the lighted film in chloroform for 30 seconds, take it out and rinse it twice with 5 ml of isopropanol, and blow dry the silicon wafer with nitrogen to realize patterning. Figure 8 shown.
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