P type doping method for cubic boron nitride thin film

A cubic boron nitride and thin film technology, applied in chemical instruments and methods, diffusion/doping, electrical components, etc., can solve the difficult p-type doping of c-BN thin films, low impurity activation rate, and difficult simultaneous preparation BN thin film and other problems, to achieve the effect of high repeatability and good doping uniformity

Inactive Publication Date: 2008-05-07
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the nucleation and growth conditions of c-BN thin films deposited by low-pressure vapor phase are very harsh.
If the in-situ doping method used in the HTHP method is directly transplanted, in-situ impurities will be introduced during the preparation process, which will inhibit the nucleation of the BN cubic phase, and it is difficult to prepare a BN film containing a cubic phase at the

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0024] 1. Intrinsic c-BN thin films were prepared in a radio frequency (13.56 Hz) sputtering system. The sputtering system uses a high-purity h-BN (99.99%) hot-pressed target with a diameter of 100mm. We take the most commonly used monocrystalline silicon wafer in the semiconductor industry as an example, and use n-type polished silicon wafer as the substrate (resistivity 2-4Ωcm, thickness 0.3mm). Before deposition, the substrates were ultrasonically cleaned with toluene, acetone, ethanol, 25% hydrofluoric acid solution and deionized water. The pre-vacuum degree of the system is 1.33×10 -3 Below Pa. The specific growth process parameters of the film in this example are listed in Table 1.

[0025] Table 1 Parameters of cubic boron nitride thin films prepared by RF sputtering system

[0026]

Example

pre-sputtering stage

Film forming stage

first step

second step

time (min)

10～20

15～30

45～90

...

example 2

[0033] 1. The intrinsic c-BN thin film is prepared by vapor deposition, the thickness is about 450nm, and the cubic phase content is 40%. The conductivity is 2×10 -11 Ω -1 cm -1 .

[0034] 2. After routine surface cleaning of the prepared c-BN film, put it into an ion implanter and implant metal beryllium. The implant energy is 100KeV, and the implant dose is 5×10 15 ion / cm 2 .

[0035] 3. Slow annealing. After keeping the temperature at 900°C for 60 minutes, the temperature was naturally lowered to room temperature, and high-purity nitrogen protection was continued throughout the process.

[0036] 4. Make the film temperature rapidly reach 1050° C. by laser irradiation and keep it for 20 seconds. The conductivity of the obtained p-type c-BN film is 1.2×10 -5 Ω -1 cm -1 .

example 3

[0038]1. The intrinsic c-BN thin film is prepared by vapor deposition, the thickness is about 200nm, and the cubic phase content is 95%. The conductivity is 1.3×10 -11 Ω-1cm-1.

[0039] 2. The implantation energy for implanting metal beryllium is 80KeV, and the implantation dose is 1×10 17 ion / cm 2 .

[0040] 3. Slow annealing. After keeping the temperature at 600°C for 45 minutes, the temperature was naturally lowered to room temperature, and the protective gas of high-purity nitrogen was continuously passed through the whole process.

[0041] 4. Make the film temperature rapidly reach 1000° C. by laser irradiation and keep for 40 seconds. The available conductivity is 8.5×10 -5 Ω -1 cm -1 p-type c-BN film.

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Abstract

The invention relates to a p-type doping method of heteroepitaxial cubic boron nitride thin film, belonging to the wide band-gap semiconductor thin film doping field. The invention overcomes the difficulty that wide band-gap superhard material c-BN thin film is difficult to realize the p-type doping, and realize the effective p-type doping of the c-BN thin film. The invention comprises the following steps: firstly, low pressure gas phase thin film is used to deposit a layer of intrinsic c-BN thin film on growth equipment, the thickness of the intrinsic c-BN thin film is 200 to 800 nm, the content of cubic phase is 40 to 95 percent, the electrical conductivity is 10<-9> to 10<-11> ohm<-1> cm<-1>; secondly, metal beryllium ions are chosen as p-type dopant, the energy range of the ion-implanted beryllium is 80 to 200 kiloelectronvolt; the dosage range of the ion-implanted beryllium is 5 x 10<15> to 1 x 10<17>ion/cm<2>; secondly, slow rate annealing: the slow rate annealing temperature is 600 to 900 DEG C; the constant temperature time is 40 to 60 minutes; fourthly, the thin film which is annealed through the step three is irradiated by laser and the second impurity activation process is operated to the thin film, the annealing temperature is1000 to 1050 DEG C, and the annealing time is 20 to40 minutes. The invention leads the electrical conductivity of the c-BN thin film with above 40 percent of the cubic phase content is increased by about hundred thousand times.

Description

technical field [0001] The invention relates to a method for preparing a p-type thin film of cubic boron nitride (c-BN), a semiconductor material with wide band gap and high hardness. The p-type semiconductor film will be used in high-power, high-voltage-resistant, and high-frequency electronic devices, and belongs to the field of compound semiconductor materials. Background technique [0002] Boron nitride (BN) belongs to the third generation of semiconductor materials, following the first generation of semiconductor materials (represented by silicon-based semiconductors) and the second generation of semiconductor materials (represented by gallium arsenide (GaAs) and indium phosphide (InP) Represents) a new type of wide bandgap semiconductor material developed later. In the BN system, cubic boron nitride (c-BN) has outstanding physical, chemical and mechanical properties. Therefore, the research on its material preparation and characteristics, and the exploration of devic...

Claims

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Application Information

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IPC IPC(8): H01L21/18H01L21/265H01L21/24H01L21/324H01L21/268C30B31/22
Inventor 邓金祥陈光华何斌张晓康陈浩
Owner BEIJING UNIV OF TECH
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