Method for preparing silicon carbide nano line

Abstract

The invention relates to a method for preparing silicon carbide nanowires, waster containing SiO2 such as silicon ore, quartz, waste fiber, waste quartz, biomass ash waste, and the like, are taken as the raw material, and carbon, charcoal, coal, waste activated carbon, coke and lignite, and the like, are taken as the reducing agent. The raw material and the reducing agent are mixed according to the ratio of 1:0.5 to 6; after vacuum carbothermal reduction at the vacuum control degree of 10<-2> to 10<-4> Pa, the temperature of 700 DEG C to 2000 DEG C, and the reduction reaction time of 10min to 2h, the mixture is naturally cooled to the room temperature, after ignition and washing, filtering and drying, SiC nanowires with the diameter of 30 to 120nm and the length at micron class are prepared.

Description

1. Technical field [0001] The invention relates to a method for preparing silicon carbide nanowires, which belongs to the technical field of producing silicon carbide materials by means of vacuum metallurgy. 2. Background technology [0002] Silicon carbide has a series of excellent characteristics such as wide band gap, high critical breakdown voltage, high thermal conductivity, and high carrier saturation drift velocity. Devices, ultraviolet detectors and short-wave light-emitting diodes have broad application prospects. As an important functional material, silicon carbide nanowires also have very high strength and toughness, and can be widely used as reinforcement materials for ceramics, metals, and polymers. Therefore, how to prepare silicon carbide nanowires on a large scale is very important. [0003] Based on the many excellent properties and wide applications of SiC nanowires, many scholars at home and abroad have done a lot of scientific research on the synthesis ...

AI Technical Summary

Problems solved by technology

Among them, the arc discharge method, chemical vapor deposition method and heating evaporation method need the help of catalysts, which inevitably results in low product purity and restricts their practical application.

Found through literature search, Dai et al. published the synthesis and characterization of silicon carbide nanowires in "Nature", 1995, (375): 769~772, (UK). The advantage of the method introduced in this paper is that it can be selected The diameter of the initial carbon nanotubes and the adjustment of the reaction temperature to control the shape and growth direction of SiC nanowires, the disadvantage is that the price of carbon nanotubes is higher and the cost is higher

Hao Yajuan and others published the article "Silicon carbide nanowires with different shapes prepared by carbothermal reduction" in "Journal of Inorganic Chemistry", 2006, (10): 1833-1837: using phenolic resin as the carbon source and ethyl orthosilicate as the Silicon source, lanthanum nitrate and surfactant are used as regulators, and SiC precursor xerogels with different compositions are prepared by sol-gel method through reasonable control of reaction conditions, and then under the protection of argon (50ml / min), Carbothermal reduction was carried out at 1300°C for 5 hours, and linear silicon carbide nanowires with a diameter of 50-70 nm and a length of tens of microns were prepared. This method has the advantages of low cost and simple process, but the disadvantage is that it is easy to form agglomeration, dispersibility and Poor crystallinity

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