Method for preparing silicon carbide nano line

A silicon carbide nanowire and carbonaceous technology is applied in the field of preparing silicon carbide nanowires, which can solve the problems of poor dispersion and crystallization, high price of carbon nanotubes, restricting practical application, etc., and achieves low environmental pollution, cheap raw materials, low cost effect

Inactive Publication Date: 2009-03-18
KUNMING UNIV OF SCI & TECH
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Problems solved by technology

Among them, the arc discharge method, chemical vapor deposition method and heating evaporation method need the help of catalysts, which inevitably results in low product purity and restricts their practical application.
Found through literature search, Dai et al. published the synthesis and characterization of silicon carbide nanowires in "Nature", 1995, (375): 769~772, (UK). The advantage of the method introduced in this paper is that it can be selected The diameter of the initial carbon nanotubes and the adjustment of the reaction temperature to control the shape and growth direction of SiC nanowires, the disadvantage is that the price of carbon nanotubes is higher and the cost is higher
Hao Yajuan and others published the article "Silicon carbide nanowires with diffe

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  • Method for preparing silicon carbide nano line

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Example Embodiment

[0015] Example 1: Lignite with a fixed carbon content of 92% and silica ore with a purity of 99% or more are used as raw materials. After crushing, they are ground into a powder with a size of 20 mesh or less with a ball mill, and then the raw powder is classified and sieved to obtain a particle size of below 50 mesh. Powder; SiO 2 Powder and carbon powder are mixed at a molar ratio of 1:1, and the mixed powder is placed in the graphite crucible of the vacuum induction furnace. After the system is closed, vacuum 10 -2 ~10 -4 Pa, the temperature is raised to 1200°C at a rate of 100°C / min, the reaction is stopped after 20 minutes of reaction, and then cooled to room temperature naturally to obtain the primary reaction product, which is burned at 800°C for 1 hour, and the excess in the product is removed with hydrofluoric acid The silicon dioxide is washed, filtered, and dried to prepare SiC nanowires with a diameter of 90-110nm and a length of micrometers.

Example Embodiment

[0016] Example 2: Bamboo charcoal with a purity of 99% and silica ore with a purity of 99% or more are used as raw materials. After crushing, they are ground into a powder with a size of 20 mesh or more with a ball mill. After crushing, they are ground into a powder with a size of 20 mesh or less with a ball mill. The raw material powder is classified and sieved to obtain a powder with a particle size of 100 mesh. SiO 2 Powder and carbon powder are mixed at a molar ratio of 2:1, and the mixed powder is placed in the corundum crucible of the vacuum induction furnace. After the system is closed, vacuum 10 -2 ~10 -4 Pa, the temperature is raised to 1400°C at a rate of 100°C / min, the reaction is stopped after 30 minutes of reaction, and then naturally cooled to room temperature to obtain the primary reaction product, which is burned at 700°C for 3h, and the excess in the product is removed with hydrofluoric acid The silicon dioxide is washed, filtered, and dried to prepare the SiC nan...

Example Embodiment

[0017] Example 3: Activated carbon with a purity of 98% or more and waste quartz with a purity of 99.9% or more are used as raw materials. After crushing, they are ground into a powder with a size of 20 mesh or less by a ball mill, and then the raw powder is classified and sieved to obtain a powder with a particle size of 150 mesh. SiO 2 The powder and activated carbon powder are mixed at a molar ratio of 3:1. The mixed powder is placed in the graphite crucible of the vacuum induction furnace. After the system is closed, the system is vacuumed to remove the air in the system, and the temperature is raised to 1600°C at a rate of 100°C / min. After 40 minutes, stop the reaction, and then cool to room temperature to obtain the primary reaction product, burn it at 900°C for 1 hour, remove excess silica in the product with hydrofluoric acid, and then wash, filter, and dry to prepare SiC nanowires The diameter is 40-120nm, and the length is in the micron range.

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Abstract

The invention relates to a method for preparing silicon carbide nanowires, waster containing SiO2 such as silicon ore, quartz, waste fiber, waste quartz, biomass ash waste, and the like, are taken as the raw material, and carbon, charcoal, coal, waste activated carbon, coke and lignite, and the like, are taken as the reducing agent. The raw material and the reducing agent are mixed according to the ratio of 1:0.5 to 6; after vacuum carbothermal reduction at the vacuum control degree of 10<-2> to 10<-4> Pa, the temperature of 700 DEG C to 2000 DEG C, and the reduction reaction time of 10min to 2h, the mixture is naturally cooled to the room temperature, after ignition and washing, filtering and drying, SiC nanowires with the diameter of 30 to 120nm and the length at micron class are prepared.

Description

1. Technical field [0001] The invention relates to a method for preparing silicon carbide nanowires, which belongs to the technical field of producing silicon carbide materials by means of vacuum metallurgy. 2. Background technology [0002] Silicon carbide has a series of excellent characteristics such as wide band gap, high critical breakdown voltage, high thermal conductivity, and high carrier saturation drift velocity. Devices, ultraviolet detectors and short-wave light-emitting diodes have broad application prospects. As an important functional material, silicon carbide nanowires also have very high strength and toughness, and can be widely used as reinforcement materials for ceramics, metals, and polymers. Therefore, how to prepare silicon carbide nanowires on a large scale is very important. [0003] Based on the many excellent properties and wide applications of SiC nanowires, many scholars at home and abroad have done a lot of scientific research on the synthesis ...

Claims

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Application Information

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IPC IPC(8): C01B31/36
Inventor 马文会杨斌王华刘大春戴永年朱文杰伍继君罗晓刚汪镜福魏奎先徐宝强秦博
Owner KUNMING UNIV OF SCI & TECH
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