Polycrystal material with sulvanite structure and application thereof
A polycrystalline and copper ore technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of low photoelectric conversion efficiency, limited working temperature range, pollution in production and recycling process, etc., to achieve improved photoelectric conversion Efficiency, improved electrical stability, and good electrical conductivity
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specific Embodiment 1
[0018] Specific embodiment one: Cu 3 vs. 4 Preparation of polycrystalline powder:
[0019] Weigh 2.0618g, 0.5510g, 1.3872g analytically pure copper powder, vanadium powder and sulfur powder respectively, put them into a glass test tube, evacuate to 1.4Pa, seal the glass tube, put it in a muffle furnace, the heating process is : (1) 120 minutes from room temperature to 440 ℃, heat preservation 60 minutes; (2) temperature to 550 ℃, heat preservation 24 hours; (3) after cooling, take out the sample, put it into a glass tube after grinding, and evacuate to 1.4Pa Sealing; (4) repeating the first two heating processes, and keeping the temperature at 550° C. for 144 hours to obtain black powder. Adopt X-ray powder diffraction technique (XRD) to carry out phase analysis to product (such as figure 1 As shown in the figure below), the results show that the obtained product is Cu 3 vs. 4 .
specific Embodiment 2
[0020] Specific embodiment two: Cu 3 vs. 4 Preparation of polycrystalline thin films:
[0021] Will Cu 3 vs. 4 Polycrystalline powder is molded by uniaxial pressure to obtain flaky, high-density, hard-to-break Cu 3 vs. 4 target. Put the target material and the glass substrate cleaned ultrasonically with ethanol into a vacuum chamber, and adjust the distance between the target material and the substrate to be 5 cm. Turn on the mechanical pump, evacuate to below 1Pa, then turn on the molecular pump, evacuate to 10 -5 pa. The substrate is heated to 500°C, the laser is preheated, and the laser parameters are adjusted: the laser frequency is 5 Hz, and the single pulse energy is 120 mJ. The coating time is 40 minutes. Adopt X-ray powder diffraction technique to carry out phase analysis to the thin film of gain (such as figure 1 As shown in the figure above), the results show that the obtained film is Cu 3 vs. 4 polycrystalline film. The cross-sectional morphology of the...
specific Embodiment 3
[0022] Specific embodiment three: Cu 3 vs. 4 The relationship between the absorption coefficient of polycrystalline thin film and photon energy:
[0023] Cu prepared by UVISELER ellipsometer (HORIBA Jobin Yvon company) 3 vs. 4 The optical properties of polycrystalline thin films were measured. The incident angle of the laser beam is 70°. The obtained data was fitted with Deltapsi2 software to obtain Cu 3 vs. 4 Reflection coefficient n and extinction coefficient κ of polycrystalline film at different wavelengths. Calculate Cu by the formula α=4πκ / λ and E=hc / λ 3 vs. 4 The relationship between absorption coefficient and photon energy of polycrystalline thin films. The experimental results show that when the wavelength is less than 720nm, Cu 3 vs. 4 Polycrystalline thin films have absorption coefficients as high as 10 5 cm -1 .
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