N-type buried-channel silicon carbide metal oxide semiconductor field effect transistor (DEMOSFET) device and preparation method thereof

An N-type, buried technology, applied in the field of microelectronics, can solve the problems of weakening the withstand voltage capability of devices, and achieve the effects of increasing breakdown voltage, reducing on-resistance, and increasing area

An N-type, buried technology, applied in the field of microelectronics, can solve the problems of weakening the withstand voltage capability of devices, and achieve the effects of increasing breakdown voltage, reducing on-resistance, and increasing area

CN102194885AActive Publication Date: 2011-09-21SEMICON MFG ELECTRONICS (SHAOXING) CORP
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  • N-type buried-channel silicon carbide metal oxide semiconductor field effect transistor (DEMOSFET) device and preparation method thereof
  • N-type buried-channel silicon carbide metal oxide semiconductor field effect transistor (DEMOSFET) device and preparation method thereof
  • N-type buried-channel silicon carbide metal oxide semiconductor field effect transistor (DEMOSFET) device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Step 1, at N + Epitaxial growth of N on SiC substrate - drift layer, such as image 3 a.

[0037] First to N + Type silicon carbide substrate 11 is cleaned by RCA standard; and then epitaxially grown on the front surface with a low-pressure hot-wall chemical vapor deposition method with a thickness of 9 μm and a nitrogen ion doping concentration of 5×10 15 cm -3 N - For the epitaxial drift layer 10, the epitaxial process conditions are as follows: the temperature is 1600° C., the pressure is 100 mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0038] Step 2, at N - Epitaxial growth of the current spreading layer on the drift layer, such as image 3 b.

[0039] On the N-type drift layer 10, the epitaxial growth thickness is 0.6 μm and the nitrogen ion doping concentration is 5×10 by the low pressure hot wall chemical vapor deposition method. 16 cm -3 The epitaxial process conditions of...

Embodiment 2

[0071] Step 1, at N + Epitaxial growth of N on SiC substrate - drift layer, such as image 3 a.

[0072] First to N + Type silicon carbide substrate 11 is cleaned by RCA standard; and then epitaxially grown on the front surface with a low-pressure hot-wall chemical vapor deposition method with a thickness of 9.5 μm and a nitrogen ion doping concentration of 8×10 15 cm -3 N - For the epitaxial drift layer 10, the epitaxial process conditions are as follows: the temperature is 1600° C., the pressure is 100 mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0073] Step 2, at N - Epitaxial growth of the current spreading layer on the drift layer, such as image 3 b.

[0074] On the N-type drift layer 10, the epitaxial growth thickness is 0.55 μm and the doping concentration of nitrogen ions is 8×10 by low pressure hot wall chemical vapor deposition method. 16 cm -3 The epitaxial process conditions...

Embodiment 3

[0106] Step A, at N + Epitaxial growth of N on SiC substrate - drift layer, such as image 3 a.

[0107] First to N + Type silicon carbide substrate 11 is cleaned by RCA standard; and then epitaxially grown on the front surface with a low-pressure hot-wall chemical vapor deposition method with a thickness of 10 μm and a nitrogen ion doping concentration of 1×10 16 cm -3 N - For the epitaxial drift layer 10, the epitaxial process conditions are as follows: the temperature is 1600° C., the pressure is 100 mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the impurity source is liquid nitrogen.

[0108] Step B, at N - Epitaxial growth of the current spreading layer on the drift layer, such as image 3 b.

[0109] On the N-type drift layer 10, the epitaxial growth thickness is 0.5 μm and the nitrogen ion doping concentration is 1×10 by the low pressure hot wall chemical vapor deposition method. 17 cm -3 The epitaxial process conditions o...

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Abstract

The invention discloses an N-type buried-channel silicon carbide metal oxide semiconductor field effect transistor (DEMOSFET) device and a preparation method thereof and mainly solves the problems of low inversion layer electron mobility of the silicon carbide (MOSFET) device and contradiction between reduction in on resistance and improvement on breakdown voltage in the prior art. The device is characterized in that: an N- buried channel layer (3) which has the thickness of 0.1 mu m and the nitrogen ion doped concentration of 5*10<15>cm<-3> is introduced between a SiO2 isolation medium (2) and a P<-> layer (7A) of the traditional vertical double-diffusion metal oxide semiconductor (VDMOS) device structure; an N-type current diffusion layer (8) which has the thickness of 0.5 to 0.6 mu m and the nitrogen ion doped concentration of between 5*10<16>cm<-3> and 1*10<17>cm<-3> is introduced between a P<+> layer (7B) and an N<-> epitaxial layer (10); a P well is divided into two layers, namely the P<-> layer (7A) and the P<+> layer (7B); the P<-> layer (7A) has the thickness of 0.5 mu m and the aluminum ion doped concentration of between 1*10<15>cm<-3> and 5*10<15>cm<-3>; and the P<+> layer (7B) has the thickness of 0.2 mu m and the aluminum ion doped concentration of 3*10<18>cm<-3>. The device has the advantages of high inversion layer electron mobility, high switching reaction speed and low power consumption, and can be used for high-power electrical equipment, solar modules and hybrid fuel electric vehicles.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to a silicon carbide DEMOSFET device with an N-type buried channel and a preparation method thereof. Background technique [0002] Silicon carbide is a wide bandgap semiconductor material that has developed rapidly in the past ten years. Compared with other semiconductor materials, such as Si and GaAs, silicon carbide materials have the advantages of wide band gap, high thermal conductivity, high carrier saturation mobility, and high power density. Silicon carbide can be thermally oxidized to form silicon dioxide, making it possible to realize the circuit of silicon carbide MOSFET devices. Since the 1990s, it has been widely used in switching regulated power supplies, high-frequency heating, automotive electronics, and power amplifiers. [0003] However, there are still many problems in the development process of SiC MOSFET. The rou...

Claims

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Application Information

Patent Timeline
21 Sep 2011
Publication
CN102194885A
IPC
H01L29/78; H01L29/06; H01L29/10; H01L21/336
CPC
H01L29/66068; H01L29/7828; H01L29/1608
Inventors
汤晓燕; 元磊