Low-radiation paint composition as well as preparation method and low-radiation material thereof
A technology of low radiation and composition, applied in the field of low radiation materials, can solve the problems of reducing the resistance of the coating, reducing the thermal insulation performance of the coating, increasing the surface heat transfer coefficient, etc., so as to improve the electrical conductivity and thermal insulation performance. Good, improve the effect of emissivity
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[0021] The present invention provides a kind of preparation method of above-mentioned low radiation paint composition, specifically comprises the following steps:
[0022] 1) Add 0.1-0.5% surfactant of the total weight of the semiconductor nanomaterial dispersion into the solvent, ultrasonically mix the above-mentioned semiconductor nanoparticles for 0.5-2.5 hours, preferably 1 hour, and then use a ball mill for 8-12 hours, preferably After 10 hours, a modified semiconductor nanometer material dispersion is obtained, wherein the content of the inorganic semiconductor nanoparticle is 20-50% of the total weight of the semiconductor nanoparticle dispersion.
[0023] The surfactant used can be one or more of sodium dodecylsulfonate, sodium lauryl sulfate, sodium dodecylbenzenesulfonate, oleic acid, stearic acid, polysorbate 80, polysorbate 60 kind.
[0024] The aforementioned solvent may include a mixed solvent of two or more of ethanol, n-propanol, isopropanol, n-butanol, isobut...
Embodiment 1
[0038] 0.1 g of sodium dodecylbenzenesulfonate was added to 100 mL of deionized water, and 40 g of ATO particles with an average particle diameter of 5 nm were added thereto. The resulting mixture was ultrasonically mixed for 1 hour, and then ball milled for 10 hours with a ball mill to obtain a modified 28.6% nano-ATO aqueous dispersion. The particle state observed by transmission electron microscope (Japan Electronics, JEM-100CXII) to this nanometer ATO aqueous dispersion is as follows figure 1 Shown, and its particle size distribution figure measured with a laser particle size analyzer (Malvern, UK, zs90) is as follows figure 2 shown.
[0039] 12.8g (90mmol) of ethylenedioxythiophene was added as a conductive polymer monomer into 37g (180mmol) of sodium polystyrene sulfonate, and mixed by ultrasonic to form a mixed emulsion. Add 24.3g (90mmol) ferric trichloride as oxidizing agent to this mixed emulsion, and fully stir evenly. The resulting mixture was oxidatively polym...
Embodiment 2
[0044] 0.1 g of sodium dodecylsulfonate was added to 500 mL of deionized water, and 150 g of ATO particles having an average particle diameter of 100 nm were added thereto. The resulting mixture was ultrasonically mixed for 1 hour, and then ball milled for 10 hours with a ball mill to obtain a modified 23.1% nano-ATO aqueous dispersion.
[0045] 12.8 g (90 mmol) of ethylenedioxythiophene was added as a conductive polymer monomer into 18.5 g (90 mmol) of sodium polystyrene sulfonate, and mixed by ultrasonic to form a mixed emulsion. Add 102.7g (450mmol) ammonium persulfate as an oxidizing agent to the mixed emulsion, and stir well. The resulting mixture was oxidatively polymerized at 25° C. for 5 hours to prepare a water-soluble conductive polymer material solution having a water-soluble conductive polymer material content of 7%.
[0046] Take 180g of methyltrimethoxysilane and add it to 20g of deionized water, add 3.4g of 2M hydrochloric acid as a catalyst, heat to 30°C under...
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