Manufacturing method for surface type-P conductive diamond heat sink material

A technology of conductive diamond and heat sink materials, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of low electrical conductivity, non-diamond self-supporting film treatment, poor controllability of boron-doped diamond film, etc. Problems, to achieve the effect of low surface roughness, meet the application requirements, and excellent adhesion

Active Publication Date: 2016-02-17
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of this method include: the thickness of the boron-doped diamond film cannot be accurately controlled by the process of deposition first and then grinding; secondly, the boron-doped diamond film synthesized by direct current injection CVD technology has poor controllability and low electrical conductivity, which cannot meet the requirements of practical applications.
Chinese patent CN200810051719.2 uses diamond self-supporting film for high-power LED packaging, but it mainly involves welding the diamond film to the ceramic sheet, and does not process the diamond self-supporting film
U.S. Patent US6337513 reports a report of using diamond film instead of other coatings for chip heat sink materials, but does not involve diamond self-supporting films with better thermal conductivity

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Example 1: Using 100mm diameter high-temperature molybdenum as the substrate material, the surface was first coated with a transition layer treatment, and then diamond powder was used for manual grinding to increase the subsequent coating nucleation rate. Using a DC arc plasma jet CVD system, argon / hydrogen / methane as the reactive gas source, the deposition time is 100h, the temperature is 1050℃, and the deposition thickness is about 800μm, to obtain a 100mm diameter complete diamond self-supporting film. Then mechanical grinding and polishing are carried out separately, and the abrasive is diamond powder with different particle sizes, and finally a double-sided roughness of less than 20nm and an overall thickness of 500μm diamond self-supporting film are obtained. Laser cutting technology is used to process the diamond self-supporting film into 20mm×20mm diamond slices, which are cleaned with acetone and alcohol, and then dried to be used as a substrate. A microwave pla...

Embodiment 2

[0022] Example 2: Using the same self-supporting diamond thick film as in Example 1, using a microwave plasma chemical vapor deposition system to excite hydrogen to obtain hydrogen plasma for plasma surface treatment, the hydrogen flow rate is 100 sccm, and the substrate temperature is 700°C. Processing time 1h; then keep the MPCVD system in working condition, trimethyl borate is boron source, hydrogen is carrier gas, hydrogen is carrier gas, flow is 8sccm, methane / hydrogen is reaction gas (where hydrogen flow is 200sccm, methane flow is 4sccm) , The substrate temperature is 800℃, the deposition time is 6h, and the 10μm thick boron-doped diamond film is obtained. Finally, a layered high thermal conductivity, surface p-type conductive diamond heat sink body is formed, and the overall material thermal conductivity is 1600W·m after testing -1 k -1 ,Surface resistivity 7.7×10 -3 Ω·cm, P-type conductivity.

Embodiment 3

[0023] Example 3: Using the same self-supporting diamond thick film as in Example 1, using a microwave plasma chemical vapor deposition system to excite hydrogen to obtain hydrogen plasma for plasma surface treatment, the hydrogen flow rate is 200 sccm, and the substrate temperature is 600°C. Treatment time 2h; then keep the MPCVD system in working condition, trimethyl borate is boron source, hydrogen is carrier gas, hydrogen is carrier gas, flow is 2sccm, methane / hydrogen is reaction gas (where hydrogen flow is 100sccm, methane flow is 1sccm) , The substrate temperature is 700℃, the deposition time is 10h, and the 6μm thick boron-doped diamond film is obtained. Finally, a layered high thermal conductivity, surface p-type conductive diamond heat sink body is formed, and the overall material thermal conductivity is 1780W·m after testing -1 k -1 , Surface resistivity 1.5×10 -2 Ω·cm, P-type conductivity.

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Abstract

The invention discloses a manufacturing method for a surface type-P conductive diamond heat sink material, and belongs to the technical field of diamond free-standing film application. A polished thick free-standing diamond film is adopted as a substrate, and a thin boron-doped diamond film with the type-P conductivity is deposited after microwave hydrogen plasma surface treatment is performed. Due to the fact that homoepitaxy growth is adopted, an epitaxial conductive layer and the substrate have the perfect attachment performance, and the interface resistance can be lowered to the minimum extent; and the microwave CVD technology is adopted for manufacturing the boron-doped diamond film, the thickness is controllable, the surface roughness is low, and the film conductivity is high. Hydrogen plasma is adopted in the middle for processing the surface of the substrate, atomic-size cleaning can be performed on the substrate, and epitaxial growth of the boron-doped diamond film is further facilitated through a formed hydrogen dangling bond. The surface type-P conductive diamond heat sink material can be used for the field of packaging of some high-power electronic devices needing heat sink material surface conduction.

Description

Technical field [0001] The invention relates to a method for preparing a surface P-type conductive diamond heat sink material, which can be used for the packaging of high-power electronic devices and belongs to the technical field of diamond self-supporting film applications. Background technique [0002] Among all known materials, natural diamond has the highest thermal conductivity, up to 2000W·m -1 k -1 , Is 5 times that of copper. With the continuous development of CVD diamond film preparation technology, the thermal conductivity of the synthetic CVD diamond self-supporting film has reached the level of natural diamond, and the preparation efficiency and cost are sufficient to meet the needs of commercialization, and it is very expected to become the next generation of electronic devices. The heat sink packaging material. On the other hand, through artificial doping and other means, the original insulating diamond can be converted into a semiconductor material with P-type co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/511C23C16/503C23C16/02
CPCC23C16/0245C23C16/272C23C16/274C23C16/278
Inventor 魏俊俊李成明刘金龙陈良贤黑立富高旭辉
Owner UNIV OF SCI & TECH BEIJING
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