Modified urethane acrylate copolymer, photoresist and preparation method of photoresist

A polyurethane acrylate and acrylate technology, applied in the field of photoresist, can solve problems such as poor heat resistance, and achieve the effects of strong chemical resistance, short production cycle and simple process

Pending Publication Date: 2017-07-14
SHENZHEN DALTON ELECTRONICS MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved in the present invention is: aiming at the deficiencies such as the poor heat resistance of polyurethane acrylate synthesized by existing polyether polyols, a modified polyurethane acrylate copolymer and its preparation method are proposed. Ether polyol reaction, then adding carboxyl diol for chain extension, then modifying it with an appropriate amount of epoxy resin, and finally capping with hydroxyl-containing acrylate monomer, the relative molecular weight distribution of the obtained oligomer is relatively small Narrow, at the same time, the residence time of the acrylate monomer is shorter, avoiding the long-term reaction of the double bond, and ensuring the photoinitiated polymerization in the later stage

Method used

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  • Modified urethane acrylate copolymer, photoresist and preparation method of photoresist

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preparation example Construction

[0068] The preparation method of described modified polyurethane acrylate copolymer, comprises the steps:

[0069] Step 1: Preparation of polyurethane prepolymer: Add polyisocyanate and catalyst to the reaction equipment with thermometer, stirring paddle, and condenser tube, add polyether polyol dropwise at 60-90°C while stirring, and keep warm for reaction 1 ~3h, take a sample to measure the NCO content until it is close to the theoretical value;

[0070] Step 2: Chain extension: Dissolve the dried chain extender carboxyl diol in the solvent at 60-75°C, add it dropwise to the reaction equipment, react for 2-4 hours, and take samples to measure the NCO content until it is close to the theoretical value;

[0071] Step 3: Epoxy resin modification: heat up to 80-95°C, add epoxy resin, react for 2-4 hours, and take samples to measure the acid value;

[0072] Step 4: Capping of hydroxyl-containing acrylate: cooling down to 50-65° C., adding dropwise an appropriate amount of hydrox...

Embodiment 1

[0089] Preparation of modified polyurethane acrylate copolymer: add 33.6g HDI and 0.01g catalyst dibutyltin dilaurate in a four-necked flask equipped with condenser tube, stirring paddle and thermometer, and add 40.2g of dibutyltin dilaurate dropwise while stirring. Polyoxypropylene diol, heat preservation reaction at 75°C for 3h, and take a sample to measure the NCO group content during the reaction by the toluene-di-n-butylamine back titration method;

[0090] Then lower the temperature to 60°C, dissolve 6.65g of dried dimethylolpropionic acid in 60g of acetone, and add it dropwise into a four-neck flask, stir and react for 2h, and take samples to measure the NCO group content until it is close to the theoretical value of 2.11%;

[0091] Then heat up to 80°C, add 13.5g of epoxy resin E-44, continue to react for 3h, and measure the acid value;

[0092] Finally, the temperature was lowered to 60°C, and 15g of hydroxyethyl acrylate and 0.1g of polymerization inhibitor p-hydroxy...

Embodiment 2

[0096] The preparation of modified polyurethane acrylate copolymer: add 50.9g IPDI and 0.04g catalyst dibutyltin dilaurate in the four-necked flask that condensation tube, stirring paddle, thermometer are housed, while stirring, dropwise add 25g molecular weight is 1000 poly Oxypropylene glycol, heat preservation reaction at 75°C for 3h, and take a sample to measure the NCO group content during the reaction by the toluene-di-n-butylamine back titration method;

[0097] Then lower the temperature to 60°C, dissolve 3.1g of dried dimethylolpropionic acid in 10g of acetone, and add it dropwise into the flask, stir and react for 2h, and take samples to measure the NCO group content until it is close to the theoretical value of 2%;

[0098] Then heat up to 80°C, add 5.3g of epoxy resin E-44, continue to react for 3h, and measure the acid value;

[0099] Finally, the temperature was lowered to 60°C, and 10.7g of hydroxyethyl acrylate and 0.4g of polymerization inhibitor p-hydroxyanis...

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Abstract

The invention discloses a modified urethane acrylate copolymer. The modified urethane acrylate copolymer is prepared from 16.1 to 50.9 parts by mass of polyisocyanate, 15.4 to 40.2 parts by weight of polyether polyol, 0. 01 to 0.09 parts by weight of a catalyst, 3.1 to 11.6 parts by weight of carboxylated diol, 5.3 to 20.8 parts by weight of epoxy resin, 0.1 to 0.5 parts by weight of a polymerization inhibitor, 10.7 to 35.5 parts by weight of hydroxyl group-containing acrylate, and 10 to 80 parts by weight of a solvent. The polyisocyanate is a mixture of one or more of hexamethylene diisocyanate, tolylene diisocyanate, 1, 6-hexamethylene diisocyanate, isophorone diisocyanate, diphenylmethane diisocyanate, xylylene diisocyanate, and polymethylene polyphenyl polyisocyanate. The modified urethane acrylate copolymer has the advantages of simple operation and short production period. The modified urethane acrylate copolymer has the advantages of adjustable acid value, good heat resistance, strong corrosion resistance, good adhesion to the substrate and stable performance. The prepared photoresist has good comprehensive performances and is easy to promote and use.

Description

technical field [0001] The invention relates to a photosensitive resin in the field of photoresists, a photoresist and a preparation method thereof. Background technique [0002] Photoresist is a thin film material that is sensitive to light and resists etching. It can undergo photocuring reaction quickly through the irradiation or radiation of exposure sources such as ultraviolet light, electron beam, excimer laser beam, X-ray, and ion beam. Physical properties, especially solubility, melting, affinity, etc., have changed significantly. Photoresist is a key basic chemical material for microfabrication technology in the electronic information industry. It has various varieties and different properties, and is widely used in integrated circuits, micro-electromechanical systems, flat panel displays and other fields. [0003] Photoresist is mainly composed of photosensitive resin, photoinitiator, reactive diluent and other additives. The improvement of photosensitive resin is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G18/73C08G18/75C08G18/67C08G18/66C08G18/48C08G18/58C08G18/34C08G18/10G03F7/027
CPCC08G18/73C08G18/10C08G18/4825C08G18/58C08G18/672C08G18/755G03F7/027C08G18/6541
Inventor 陈未凤顾奇王胜林
Owner SHENZHEN DALTON ELECTRONICS MATERIAL CO LTD
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