Preparation method of metal/non-metal composite film of vertical array structure
A technology of array structure and composite thin film, which is applied in metal material coating technology, ion implantation plating, coating, etc., can solve the problems of not being able to obtain crystalline ceramics, affecting the quality of composite thin films, and having many defects in metal arrays. The effect of application prospect, high reliability and convenient operation of equipment
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[0033] The preparation method of the metal / nonmetal composite thin film with vertical array structure of the present invention comprises the following steps:
[0034] 1) Ultrasonic cleaning and drying of substrates made of P-type monocrystalline silicon, sapphire, conductive glass, PET, plexiglass or quartz wafers, then clamping them on the sample tray and sending them into the sputtering chamber ;
[0035] 2) It will include metal targets made of copper, silver, gold, platinum, ruthenium, iridium, rhodium or aluminum and materials including oxides of aluminum oxide, zinc oxide, titanium oxide or tungsten oxide, including silicon nitride, aluminum nitride , titanium nitride, zirconium nitride, or carbide non-metallic targets including silicon carbide, titanium carbide, tungsten carbide or chromium carbide are installed on the target position with an unbalanced magnetic field, and the sputtering chamber is pumped to a predetermined position Background vacuum up to 1×10 -5 ~3×...
Embodiment 1
[0040] Al 2 o 3 Preparation of / Cu vertical array composite film: select P-type single crystal silicon (resistivity is about 9-15Ω·cm, and there is an oxide layer with a thickness of 2±0.5nm on it) as the substrate, successively in acetone, anhydrous Sonicate in ethanol and deionized water for 15 minutes, and dry in a nitrogen atmosphere. After drying, clamp the substrate on the sample tray and send it into the sputtering chamber. Then the copper target (purity 99.999%) and the alumina target (purity 99.99%) are installed on the unbalanced magnetron target position respectively, and the background vacuum degree of the sputtering chamber is evacuated to 2×10 -4The coating operation starts after Pa. Introduce Ar (purity 99.999%) gas and keep the working pressure at 0.15Pa. Co-sputter the copper target and alumina target with radio frequency power supply. The power of alumina and copper is 120W and 40W respectively. The power ratio of ceramic and metal targets is The temperatu...
Embodiment 2
[0043] Al 2 o 3 Preparation of / Ag vertical array composite film: use conductive glass as the substrate, ultrasonically in acetone, absolute ethanol, and deionized water for 15 minutes, and dry in a nitrogen atmosphere. After drying, the substrate is clamped on the sample After being placed on the tray, it is sent into the sputtering chamber. Then the silver target (purity 99.999%) and the alumina target (purity 99.99%) are installed on the unbalanced magnetron target position respectively, and the background vacuum degree of the sputtering chamber is evacuated to 1×10 -4 The coating operation starts after Pa. Introduce Ar (purity 99.999%) gas and keep the working pressure at 0.10Pa, use RF power supply to co-sputter the silver target and alumina target, the power of alumina and silver is 120W and 30W respectively, the power ratio of ceramic and metal targets The temperature is 4:1, the substrate temperature is 100°C, turn on the rotation switch of the sample plate, and the...
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