Heat sink material used for light emitting diode for high-luminance semiconductor illumination

A technology of light-emitting diodes and heat sink materials, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of decreased brightness, insufficient length of diode pins, inconvenient installation, etc., and achieve cost saving and good installation stability , The effect of convenient maintenance and replacement

Inactive Publication Date: 2018-07-13
安徽普发电气有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] China will become the main driving force for the development of the global LED market. With the increase of market demand, the functions, performance and convenience of use of various diodes are also gradually increasing. In the process of use, many diodes are installed Sometimes due to the different installation environment and installation conditions, the pin length of many diodes will be insufficient, which is inconvenient to install, and there are still many light-emitting diodes whose brightness decreases obviously after a period of use. For these situations that affect normal use, this The patent provides a light-emitting diode for high-brightness semiconductor lighting that can adjust the length of the pin and increase the brightness

Method used

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  • Heat sink material used for light emitting diode for high-luminance semiconductor illumination
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  • Heat sink material used for light emitting diode for high-luminance semiconductor illumination

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Embodiment 1

[0040] A heat sink material for high-brightness semiconductor lighting light-emitting diodes, comprising the following components in parts by mass: 30 parts of graphene, 4 parts of carbon nanotubes, 3 parts of silicon carbide, 2 parts of silver conductive glue, and 0.5 parts of vanadium oxide 3 parts of calcium carbonate, 4 parts of sodium hydroxymethyl cellulose, 10 parts of alumina particles, 10 parts of magnesium oxide, 5 parts of antimony trioxide, 2 parts of sodium metasilicate, 2 parts of bentonite, 2 parts of calcium phosphate, 4 parts of zirconia sol, 3 parts of light calcium, 9 parts of cellulose, 3 parts of dimethyl itaconate, 5 parts of binder, 1 part of coupling agent, 1 part of compatibilizer, 0.8 parts of antioxidant, 0.5 part of stabilizer.

[0041] Among them, the bentonite is modified before use. During the treatment, 10 parts by mass of bentonite and 2 parts by mass of glycerin are mixed and stirred, then 0.5 parts by mass of citric acid is added, and stirred...

Embodiment 2

[0049] A heat sink material for high-brightness semiconductor lighting light-emitting diodes, comprising the following components in parts by mass: 35 parts of graphene, 6 parts of carbon nanotubes, 5 parts of silicon carbide, 5 parts of silver conductive glue, and 1.5 parts of vanadium oxide 4.5 parts of calcium carbonate, 5 parts of sodium hydroxymethyl cellulose, 12 parts of alumina particles, 15 parts of magnesium oxide, 8 parts of antimony trioxide, 3 parts of sodium metasilicate, 2 parts of bentonite, 3 parts of calcium phosphate, 4 parts of zirconia sol, 4 parts of light calcium, 11 parts of cellulose, 4 parts of dimethyl itaconate, 8 parts of binder, 2 parts of coupling agent, 1 part of compatibilizer, 1.2 parts of antioxidant, 1 part of stabilizer.

[0050] Among them, the bentonite is modified before use. During the treatment, 10 parts by mass of bentonite and 2 parts by mass of glycerin are mixed and stirred, then 0.5 parts by mass of citric acid is added, and stirr...

Embodiment 3

[0058] A heat sink material for high-brightness semiconductor lighting light-emitting diodes, comprising the following components in parts by mass: 40 parts of graphene, 8 parts of carbon nanotubes, 6 parts of silicon carbide, 8 parts of silver conductive glue, and 3 parts of vanadium oxide 5 parts of calcium carbonate, 6 parts of sodium hydroxymethyl cellulose, 15 parts of alumina particles, 20 parts of magnesium oxide, 10 parts of antimony trioxide, 4 parts of sodium metasilicate, 4 parts of bentonite, 3 parts of calcium phosphate, 6 parts of zirconia sol, 5 parts of light calcium, 13 parts of cellulose, 5 parts of dimethyl itaconate, 12 parts of binder, 2 parts of coupling agent, 2 parts of compatibilizer, 1.4 parts of antioxidant, 2 parts of stabilizer.

[0059] Among them, the bentonite is modified before use. During the treatment, 10 parts by mass of bentonite and 2 parts by mass of glycerin are mixed and stirred, then 0.5 parts by mass of citric acid is added, and stirr...

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Abstract

The invention discloses a heat sink material used for a light emitting diode for high-luminance semiconductor illumination, and relates to the technical field of semiconductor illumination. The heat sink material comprises graphene, carbon nanotubes, silicon carbide, silver conductive adhesive, vanadium oxide, calcium carbonate, carboxymethyl cellulose sodium, aluminium oxide particles, magnesiumoxide, antimonous oxide, sodium metasilicate, bentonite, calcium phosphate, zirconium dioxide sol, light weight calcium, cellulose, dimethyl itaconate, a binder, a coupling agent, a compatilizer, an antioxidant and a stabilizing agent. The heat sink material has high comprehensive performance and mechanical performance, excellent insulativity and heat conductivity and relatively low expansion coefficient, and can be widely applied to the heat sink material used for the light emitting diode for high-luminance semiconductor illumination in the semiconductor technology.

Description

Technical field: [0001] The invention relates to the technical field of semiconductor lighting, in particular to a heat sink material for a light-emitting diode used in high-brightness semiconductor lighting. Background technique: [0002] Light-emitting diodes are referred to as LEDs for short. Made of compounds containing Gallium (Ga), Arsenic (As), Phosphorus (P), Nitrogen (N), etc. Visible light can be radiated when electrons and holes recombine, so they can be used to make light-emitting diodes. It is used as an indicator light in circuits and instruments, or as a text or number display. Gallium arsenide diodes emit red light, gallium phosphide diodes emit green light, silicon carbide diodes emit yellow light, and gallium nitride diodes emit blue light. Due to chemical properties, it is divided into organic light-emitting diode OLED and inorganic light-emitting diode LED. [0003] LED products are mainly used in the three major fields of backlight, color screen and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/64
CPCH01L33/641H01L2933/0075
Inventor 缪和平
Owner 安徽普发电气有限公司
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