Preparation method of interface-enhanced high-light-heat-stabilized perovskite film

A technology of interface enhancement and perovskite, which is applied in the direction of photovoltaic power generation, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of perovskite film decomposition, poor conductivity, and charge interface accumulation, etc., to improve various properties, Effect of grain size increase and thin film defect reduction

Active Publication Date: 2019-04-05
ZHENGZHOU UNIV
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Problems solved by technology

[0003] Although the efficiency of perovskite solar cells is comparable to that of silicon-based solar cells, and even far exceeds that of other thin-film cells, its long-term thermal stability and light stability are still one of the insurmountable problems in commercialization.
The main reason is that titanium dioxide is currently the mainstream electron transport layer in perovskite solar cells. Its disadvantage is that ultraviolet light and high temperature will accelerate the photocatalytic degradation of titanium dioxide, which will lead to the decomposition of perovskite film; in addition, titanium dioxide often requires high temperature sintering ( 450-500°C), it is impossible to prepare flexible perovskite devices, and these limitations have seriously affected the commercialization of high-performance perovskite solar cells.
In view of the photosensitive and thermosensitive inertness of fullerenes and their derivatives, they are strong candidates for electron transport layers. However, fullerene derivatives, as commonly used organic electron transport layers, have poor conductivity and low electron mobility. , it is easy to cause charge interface accumulation; in addition, the interface with perovskite is easy to form holes, especially under high temperature and continuous light, which will seriously affect the film quality of the perovskite layer, resulting in serious carrier recombination and weakening device performance.

Method used

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  • Preparation method of interface-enhanced high-light-heat-stabilized perovskite film

Examples

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Embodiment 1

[0029] A method for preparing a perovskite film, the steps are as follows:

[0030] (1) Wash the FTO conductive glass with deionized water, acetone, absolute ethanol, and isopropanol in sequence for 15 minutes;

[0031] (2) Dry the cleaned FTO conductive glass in the air, and then perform UV ozone treatment for 15 minutes;

[0032] (3) Prepare a fullerene derivative chlorobenzene solution with a concentration of 20mg / mL;

[0033] (4) Add an N-type organic dopant accounting for 3% of the mass of the fullerene derivative into the chlorobenzene solution obtained in step (3), and stir uniformly;

[0034] (5) The solution obtained in step (4) is spin-coated on FTO conductive glass;

[0035] (6) The substrate is dried at room temperature (no further thermal annealing is required) to form a fullerene derivative film;

[0036] (7) Preparation of perovskite film CH 3 NH 3 PbI 3 : After step (6), the FTO conductive glass is placed in the glove box; the CH 3 NH 3 I (1.25 M), PbI 2 (1.25 M) dissolve...

Embodiment 2

[0047] In order to further verify the technical effects before and after the addition of N-type organic dopants, on the basis of the perovskite films obtained in Example 1 and Comparative Example 1, a perovskite solar cell was further fabricated. The steps are as follows:

[0048] Step S1—According to the method of Example 1 or Comparative Example 1, that is, adding and not adding N-type organic dopants to prepare perovskite films on the substrate respectively;

[0049] Step S2--The hole transport layer is prepared by the spin coating process: the hole transport layer solution ratio is 144.6 mg Spiro-OMeTAD, 58 μL tetra-tert-pyridine, and 35 μL bis(trifluoromethanesulfonyl) 520 mg / mL The acetonitrile solution of lithium amide was mixed with 2ml of chlorobenzene, and spin-coated for 30 seconds at a rotation speed of 3000 rpm;

[0050] Step S3—Prepare the metal electrode gold by vacuum thermal evaporation process, the specific parameters are: the initial pressure is 3.5×10 -7 Torr, the...

Embodiment 3

[0054] The difference from Example 1 is that the fullerene derivative is replaced with: [6,6]-phenyl-C71-isomethyl butyrate, and the N-type organic dopant is replaced with: 1, 3-Dimethyl-2-phenyl-2,3-dihydro-1H-benzimidazole, other steps remain unchanged.

[0055] The photo-thermal stability of the perovskite film can also be greatly improved, and the efficiency and stability of the corresponding battery can be greatly improved.

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Abstract

The invention belongs to the technical field of photoelectric thin films, and discloses a preparation method of an interface-enhanced high-light-heat-stabilized perovskite film. The method comprises the following steps of: (1) dissolving the fullerene derivative and the N-type organic dopant in a non-polar solvent, wherein the concentration of the fullerene derivative in the non-polar solvent is 10-20 mg/mL, and by the mass percentage, the dosage of the N-type organic dopant is 1-5% of the dosage of the fullerene derivative; (2) spinning the solution obtained in the step (1) on the substrate for drying at the room temperature, and forming a fullerene derivative doped film in a self-assembling mode on the substrate; and (3) preparing a perovskite film on the fullerene derivative doped filmto obtain an interface-enhanced high-light-heat-stabilized perovskite film. The perovskite film greatly improves the film forming property and reduces the film defects, the grain size is increased, the interface-enhanced high-light-heat-stabilized perovskite film cannot be decomposed in the continuous illumination or high temperature environment, thereby greatly improving the performance of the solar cell.

Description

Technical field [0001] The invention belongs to the technical field of photoelectric thin films, and in particular relates to a method for preparing an interface enhanced high-light-thermal stable perovskite thin film. Background technique [0002] Facing the current energy crisis and environmental pollution, solar energy, as a renewable energy source, is one of the important methods to meet the growing energy demand worldwide. An effective way to convert solar energy into electrical energy is to prepare solar cells based on the photovoltaic effect. The research and development of high-efficiency and low-cost new solar cells is the technical basis for the wide application of solar photovoltaic power generation. Since 2009, the new organic-inorganic hybrid perovskite solar cell has attracted wide attention from many scholars and industrialists due to its excellent light absorption performance, low manufacturing cost, and simple preparation process. Its photoelectric conversion T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48
CPCH10K71/12H10K30/10Y02E10/549
Inventor 张懿强宋延林刘小涛吴振华
Owner ZHENGZHOU UNIV
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