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Manufacturing method of photovoltaic cell electrode

A production method and technology of photovoltaic cells, which are applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of expensive materials, broken silicon wafers, and high requirements for environmental control, and achieve the effect of simplifying process steps and improving yield.

Pending Publication Date: 2021-06-18
SUZHOU SUNWELL NEW ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process and materials are expensive, and have high requirements for the control of the use environment, so the application in the photovoltaic industry has been limited to the project development of high-end scientific research laboratories
Dry film combined with photosensitive components has been used as a cheap substitute material for photoresist in the mask opening process of solar cells, but due to the process of pasting, laminating and peeling off the dry film, it is very easy to cause silicon wafers to break. This material and the mask opening process using it have not been used on a large scale in the photovoltaic industry at the mass production level

Method used

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  • Manufacturing method of photovoltaic cell electrode
  • Manufacturing method of photovoltaic cell electrode
  • Manufacturing method of photovoltaic cell electrode

Examples

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Comparison scheme
Effect test

Embodiment 1

[0038] A method for manufacturing a photovoltaic cell electrode, comprising the following steps:

[0039] (1) Deposit the liquid mask material containing the photosensitive component on the surface of the photovoltaic device whose surface is a dielectric layer. The deposition method of the mask material includes screen printing, roll coating, brush coating, slit coating, and curtain coating Any one of cloth, spray coating, spin coating or inkjet printing; the viscosity of the mask material is 2-30000cP, preferably 150-6000cP; the dielectric layer is silicon oxide, silicon nitride, silicon oxynitride, silicon carbide or aluminum oxide Any one of them, the photovoltaic device is a TOPCON cell whose structure at least applies the method to the light-receiving surface;

[0040] (2) Expose part of the mask material to laser light, the laser wavelength range is 300-425nm, preferably 350-425nm, wherein a chemical reaction occurs in the exposed area, and the chemical reaction is photo...

Embodiment 2

[0046]A method for manufacturing a photovoltaic cell electrode, comprising the following steps:

[0047] (1) Deposit the liquid mask material containing the photosensitive component on the surface of the transparent conductive oxide, the deposition method of the mask material includes screen printing, roll coating, brush coating, slit coating, curtain coating , spray coating, spin coating or inkjet printing; the viscosity of the mask material is 2-30000cP, preferably 150-6000cP; the transparent conductive oxide is indium tin oxide, tin oxide, indium tungsten oxide, aluminum-doped zinc oxide , molybdenum oxide, tungsten-doped indium tin oxide, zirconium-doped tin oxide or zirconium-doped indium tin oxide; the photovoltaic device is a back-contact cell whose structure is only applied to the backlight side of the device;

[0048] (2) Expose part of the mask material to laser light, the laser wavelength range is 300-425nm, preferably 350-425nm, wherein a chemical reaction occurs i...

Embodiment 3

[0054] A method for manufacturing a photovoltaic cell electrode, comprising the following steps:

[0055] (1) Deposit the liquid mask material containing the photosensitive component on the surface of the photovoltaic device whose surface is a conductive seed layer. The deposition method of the mask material includes screen printing, roll coating, brush coating, slit coating, curtain coating, etc. Any one of coating, spray coating, spin coating or inkjet printing; the viscosity of the mask material is 2-30000cP, preferably 150-6000cP; the conductive seed layer is titanium, nickel, copper, nickel-vanadium alloy or titanium-tungsten alloy Any one of the above; the photovoltaic device is a heterojunction cell whose structure is at least applied to the method on the light-receiving surface; (2) exposing a part of the mask material to laser light, the laser wavelength range is 300-425nm, preferably 350-425nm, in which a chemical reaction occurs in the exposed area, and the chemical...

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Abstract

The invention provides a manufacturing method of a photovoltaic cell electrode. The manufacturing method comprises the following steps: depositing a liquid mask material containing a photosensitive component on the surface of a photovoltaic device of which the surface is a dielectric layer or a transparent conductive oxide or a conductive seed layer; exposing a partial region of the mask material under laser, wherein the exposed region is subjected to chemical reaction; developing to remove the mask material of the unexposed area from the surface of the photovoltaic device so that the dielectric layer or the transparent conductive oxide or the conductive seed layer is exposed, thereby forming a local opening of the mask material; etching the dielectric layer to expose a semiconductor layer at the opening position, and attaching a conductive material to the semiconductor surface at the opening position through an electrochemical deposition mode; or attaching a conductive material on the open transparent conductive oxide or conductive seed layer to the surface of the locally open photovoltaic device in an electrochemical deposition manner; and removing the mask material on the surface.

Description

technical field [0001] The invention relates to the field of solar cell and semiconductor manufacturing, in particular to a method for manufacturing a photovoltaic cell electrode and a photovoltaic cell formed according to the method. Background technique [0002] Crystalline silicon solar cells usually use screen printing silver paste and then sintered at high temperature or low temperature to form ohmic contact electrodes between semiconductors and metals to export photogenerated carriers, which is currently the most widely used metallization method for crystalline silicon solar cells. This method has a simple process and is currently the mainstream mass production process, and the printed fine grid lines can be as low as about 45 microns in width. In recent years, with the continuous development of silicon wafer and battery technology, the production cost of solar cells has continued to decline, and the cost of expensive silver paste in the metallization process has conti...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/1804H01L31/022425Y02P70/50
Inventor 姚宇李中天
Owner SUZHOU SUNWELL NEW ENERGY CO LTD