Nitride high electron mobility transistor and manufacturing method thereof

Abstract

The invention discloses a nitride high-electron-mobility transistor and a manufacturing method thereof, and mainly solves the problems of heat accumulation effect and heat dissipation when an existing nitride electronic device works at high voltage and high power. The transistor comprises a high-thermal-conductivity substrate (1), a channel layer (4), an insertion layer (5) and a barrier layer (6) from bottom to top, a bonding layer (2) and a back barrier layer (3) are arranged between the substrate (1) and the channel layer (4), a barrier protection layer (7) and an insulated gate dielectric layer (8) are sequentially arranged on the upper portion of the barrier layer (6), and a gate electrode is arranged on the insulated gate dielectric layer (8); and ohmic contact areas are arranged from the insertion layer (5) to the two sides of the insulated gate dielectric layer (8), and a source electrode and a drain electrode are arranged on the ohmic contact areas respectively. The transistor is high in output power, the self-heating effect of the device is greatly improved, the heat dissipation capability and the working reliability of the device are improved, the manufacturing process is simple, the consistency is high, and the device can be used for a high-frequency microwave power amplifier and a microwave millimeter wave integrated circuit.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor device, and more particularly to a nitride high electron mobility transistor, which can be used to make high frequency microwave power amplifiers and microwave millimeter wave single-chip integrated circuits. Background technique [0002] The gallium nitride semiconductor material has a large bandwidth, high high-performance, electronic saturation drift speed, microwave power devices and single-chip microwave integrated circuits based on the heterojunction of the gallium nitride heterogenesis. Increasingly improved, a high application value in the new generation of 5G communications and national defense weapons and equipment, which has attracted extensive attention from international research institutions. With the improvement and improvement of the device design and process level, the output power of the gallium nitride microwave power device is increased and the dimension becomes small. Under t...

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Problems solved by technology

[0004]First, the thermal conductivity of the substrate is low. As the size of GaN devices decreases and the power density increases, the heat accumulation effect in the active area of ​​the device increases significantly, resulting in a Performance indicators such as reliability and stability deteriorate rapidly, making it difficult to give full play to the advantages of nitride materials in high-frequency and high-power applications;

[0005] Second, there are large lattice mismatch and thermal mismatch between substrates with high thermal conductivity such as diamond and copper metals and nitride materials. It is difficult to achieve high crystalline quality for heteroepitaxially grown nitride device materials;

[0006]Third, when transferring gallium nitride devices to high thermal conductivity substrates such as diamond and copper metals, the sacrificial layer used in traditional methods is mostly SiO2 and other materials, because there is still a large lattice mismatch and thermal mismatch between the sacrificial layer and the nitride epitaxial material, the epitaxial layer on the SiO2 and other sacrificial layers Nitride materials have high-density dislocation defects, which cause the device to form a leakage channel under high-voltage long-term operation, thereby reducing the breakdown voltage of the device, and trapping electrons at the same time causes the current collapse of the device;

[0007] Fourth, the stripping process is complicated during device transfer, the etching process is difficult to control accurately, the stripping interface is rough and uneven, and the completeness and success rate of device stripping are low, resulting in Device performance degradation

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