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Method for preparing silicon nitride ceramic substrate through gel tape casting

A silicon nitride ceramic and gel casting technology is applied in the field of inorganic non-metals to achieve the effects of improving yield and production efficiency, good mechanical and electrical properties of products, and cost saving

Pending Publication Date: 2022-07-29
ZHENGZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Gel casting technology combines the advantages of gel injection molding and tape casting to solve the problems of traditional casting technology, reduce environmental pollution, fast film formation, short drying time, uniform green body structure and good performance

Method used

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  • Method for preparing silicon nitride ceramic substrate through gel tape casting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A preparation method for gel casting molding of a silicon nitride ceramic substrate with high thermal conductivity is as follows:

[0031] (1) Weigh 1.5g of acrylamide and 0.2g of N,N'-methylenebisacrylamide, add them to 100mL of absolute ethanol, heat in a water bath at 45°C, stir for 15min, cool to room temperature and add ammonia water and hydrochloric acid to adjust the pH to be 10.4.

[0032] (2) The solution obtained in step (1), 150 g of silicon nitride powder, 1.5 g of ammonium polyacrylate, 2.5 g of yttrium oxide and 1.5 g of magnesium oxide were all added to the ball mill, and ball milled at a speed of 200 r / min for 2 hours.

[0033] (3) 6g polyethylene glycol is added to the mixture in step (2), and ball milling is continued for 8h to obtain a slurry with a certain viscosity.

[0034] (4) Add 0.4 g initiator ammonium persulfate to the slurry, vacuum defoaming for 20 min at a speed of 40 r / min, and tape casting at a temperature of 40 °C and a speed of 0.5 m / m...

Embodiment 2

[0038] (1) Weigh 1.5g of acrylamide and 0.2g of N,N'-methylenebisacrylamide, add them to 100mL of absolute ethanol, heat in a water bath at 45°C, stir for 15min, cool to room temperature and add ammonia water and hydrochloric acid to adjust the pH to be 10.4.

[0039] (2) The solution obtained in step (1), 150 g of silicon nitride powder, 1.5 g of ammonium polyacrylate, 5 g of yttrium oxide and 3 g of magnesium oxide are all added to a ball mill, and ball milled at a speed of 200 r / min for 2 hours.

[0040] (3) 8g polyethylene glycol is added to the mixture in step (2), and ball milling is continued for 8h to obtain a slurry with a certain viscosity.

[0041] (4) Add 0.4 g initiator ammonium persulfate to the slurry, vacuum defoaming for 20 min at a speed of 40 r / min, and tape casting at a temperature of 40 °C and a speed of 0.5 m / min.

[0042](5) Drying at 30° C. for 1 hour, and cutting into green sheets of predetermined size. The green sheet was first heated to 1200 °C und...

Embodiment 3

[0045] (1) Weigh 10 g of acrylamide and 1 g of N,N'-methylenebisacrylamide, add them to 100 mL of absolute ethanol, heat in a water bath at 45°C, stir for 15 min, add ammonia water and hydrochloric acid after cooling to room temperature to adjust the pH to 10.4.

[0046] (2) The solution obtained in step (1), 150 g of silicon nitride powder, 3 g of ammonium polyacrylate, 5 g of yttrium oxide and 3 g of magnesium oxide are all added to a ball mill, and ball milled at a speed of 200 r / min for 2 hours.

[0047] (3) 6g polyethylene glycol is added to the mixture in step (2), and ball milling is continued for 8h to obtain a slurry with a certain viscosity.

[0048] (4) Add 0.3 g of initiator ammonium persulfate to the slurry, vacuum defoaming at a speed of 40 r / min for 20 min, and at a temperature of 40° C., at a speed of 0.5 m / min for tape casting.

[0049] (5) Drying at 30° C. for 1 hour, and cutting into green sheets of predetermined size. The green sheet was first heated to 12...

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Abstract

The invention discloses a gel tape casting method for preparing a silicon nitride ceramic substrate, which comprises the following steps: adding silicon nitride powder, a gel monomer, a cross-linking agent, a dispersing agent, a plasticizer and the like into an alcohol organic solvent, fully mixing, defoaming, adding an initiator, and carrying out tape casting. The innovation of the technical method lies in that sol-gel forming and tape casting process forming are organically combined, the respective advantages of the sol-gel forming and the tape casting process forming are fully played, the biscuit density of the silicon nitride substrate can be obviously improved, subsequent sintering is more compact, the oxygen content is reduced, and the thermal conductivity of the product is improved; rapid curing of a green body can be realized, the tape casting efficiency is improved, and the method is green and environment-friendly.

Description

technical field [0001] The invention relates to a gel tape casting method for preparing a silicon nitride ceramic substrate, and belongs to the technical field of inorganic nonmetals. Background technique [0002] The development speed of the integrated circuit industry is increasing. In order to adapt to the complex application environment, power electronic devices are developing in the direction of high voltage, high current, high power density and small size, especially IGBT modules for electric vehicles. Therefore, an efficient heat dissipation system is an integral part of high integrated circuits. The function of the substrate in the power device is to absorb the heat generated by the chip and transfer it to the heat sink to achieve heat exchange with the outside world. Therefore, the preparation of high thermal conductivity substrate materials is the key to the development of high-power module electronic products. [0003] Silicon nitride (Si 3 N 4 ) as a structura...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/622
CPCC04B35/584C04B35/622C04B2235/6562C04B2235/6567C04B2235/6025C04B2235/96C04B2235/9607C04B2235/6581C04B2235/3206C04B2235/3225
Inventor 马成良刘源高正霞赵振威李祥刘伟陶梦雅
Owner ZHENGZHOU UNIV
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