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Double-structure room temperature infrared detector array and manufacturing method thereof

An infrared detector and double-layer structure technology, applied in the field of micro-sensors, can solve the problems of low detection rate, equivalent noise temperature difference, etc., and achieve the effects of reducing heat loss, increasing device filling rate, and improving infrared absorption efficiency

Inactive Publication Date: 2008-11-05
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the main disadvantage of this kind of thermal detector is the low detection rate, and its equivalent noise temperature difference is usually 1-2 orders of magnitude lower than that of photon detectors. Ideally, a NETD of 20mk-50mK can be achieved

Method used

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  • Double-structure room temperature infrared detector array and manufacturing method thereof
  • Double-structure room temperature infrared detector array and manufacturing method thereof
  • Double-structure room temperature infrared detector array and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0037](1) On the SOI substrate 10, utilize micromachining technology to manufacture heat sensitive device 24, utilize integrated circuit manufacturing technology to manufacture interconnection line 22 and signal processing circuit 14, heat sensitive device 24 is a diode, deposit nitrogen on heat sensitive device 24 silicon protection layer 23, and then etch the protection layer 23 and the buried silicon dioxide layer 12 of SOI to form the pattern of the heat-sensitive device carrying layer 21 and the folding line support structure 31, see image 3 ;

[0038] (2) Deposit a sacrificial layer 25 on the protective layer 23, etch the sacrificial layer 25 to form the support point of the thermal conduction column 30, deposit silicon nitride as the material of the thermal conduction column, and remove other parts other than the thermal conduction column 30 by photolithography and etching to form a thermal conduction column. Column 30, the number of thermal conduction columns 30 is 2,...

Embodiment 2

[0044] Step is identical with embodiment 1, difference is:

[0045] The heat sensitive device 24 in the step (1) is a metal oxide field effect transistor; a silicon dioxide protective layer 23 is deposited on the heat sensitive device 24;

[0046] The material of the heat conduction column 30 in the step (2) is aluminum; the quantity is 1, and the material of the supporting film layer 41 is silicon dioxide;

[0047] In step (3), above the support film layer 41 of the infrared heat conversion layer, three layers of nanoparticle heat absorption layer 42 are deposited, the weight ratio range of the first layer of nanoparticles to the polymer carrier is 100:1, and the nanoparticle It is nano-titanium oxide, the diameter of the nano-particles is 1 micron, and the high molecular polymer is polyimide; the weight ratio range of the second layer of nano-particles to the high molecular polymer carrier is 1:50, and the nano-particles are nano-magnesium oxide, A mixture of nano-titanium ...

Embodiment 3

[0049] Step is identical with embodiment 1, difference is:

[0050] The thermosensitive device 24 in the step (1) is a thermistor;

[0051] The material of the heat conduction column 30 in the step (2) is chromium; the number is 3, and the material of the support film layer 41 is silicon dioxide;

[0052] In step (3), the mixture of nanoparticles and high molecular polymer is deposited on the support film layer 41 to form a nanoparticle heat absorbing layer, and the high molecular polymer is cured by heating to form a solid film layer. The weight ratio range of the polymer carrier is 1:100, the nano particles are a mixture of nano silicon dioxide and nano alumina, the diameters of the nano particles are respectively 0.1 nanometer and 10 microns, and the high molecular polymer is benzocyclobutene.

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Abstract

The invention discloses a room temperature infrared detector array with the two-layer structure and a preparation method, wherein the array is composed of a plurality of infrared detecting units which are the two-layer structures including an upper infrared thermal conversion layer and a lower heat-sensitive apparatus layer; the infrared thermal conversion layer comprises a supporting film and a heat adsorption layer; the heat-sensitive apparatus layer includes a heat-sensitive apparatus, a bearing layer arranged at the lower part of the heat-sensitive apparatus, a polyline supporting structure for supporting the bearing layer and the heat-sensitive apparatus to make both hang above the underlay, and a protective layer arranged above the heat-sensitive apparatus and the interlinking line; the infrared thermal conversion layer is supported on the heat-sensitive apparatus layer through the heat exchange pole. The invention effectively advances the infrared adsorption and the heat conversion efficiency through the nanometer particles, and uses a plurality of nanometer particles to realize the multichannel or the all band infrared sensitive measurement, and the

Description

technical field [0001] The invention belongs to the field of microsensors, in particular to a room-temperature infrared detector array with a double-layer structure and a manufacturing method thereof. Background technique [0002] Infrared detector arrays are a useful tool for imaging in environments with poor visibility, such as night, smog, and haze. Infrared detector arrays are widely used in military remote sensing, target recognition and tracking, automotive night vision, disaster prevention and relief, medical testing, weather forecasting, agriculture, geological surveying and many other fields, and its research and production have received extensive attention. There are two ways to achieve infrared imaging, active and passive. The active type transmits and receives the reflected echo of the object through the imaging device, and images the object under test. The passive method takes advantage of the fact that objects above absolute zero produce infrared heat radiati...

Claims

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Application Information

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IPC IPC(8): G01J5/10
Inventor 王喆垚张琪刘理天
Owner TSINGHUA UNIV
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