Method for preparing high-quality large silicon carbide single crystal and silicon carbide single crystal prepared by same

A silicon carbide single crystal, high-quality technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc. It can meet the problems of stable growth of high-quality large SiC single crystal, uniformity of radial temperature distribution of difficult seed crystals, etc., and achieve the effect of single crystal form, strong binding force, and improved temperature field uniformity.

Active Publication Date: 2012-06-06
安徽微芯长江半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The place where the hole is sandwiched between the seed crystal and the seed crystal frame has poor heat transfer and high temperature, while the place with carbon adhesion has good heat transfer and low temperature, and the temperature distribution on the surface of the seed crystal is also different. Growth of high-quality, single polytype silicon carbide single crystals
[0007] To sum up, the seed crystal fixing method used for SiC crystal growth in the prior art is difficult to ensure the uniformity of the radial temperature distribution of the seed crystal, and it is inevitable that there are differences in crystallization conditions in various regions in the early growth stage, and parasitic 6H, 15R, 4H polytype competitive growth cannot satisfy the stable growth of high-quality large SiC single crystal

Method used

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  • Method for preparing high-quality large silicon carbide single crystal and silicon carbide single crystal prepared by same
  • Method for preparing high-quality large silicon carbide single crystal and silicon carbide single crystal prepared by same
  • Method for preparing high-quality large silicon carbide single crystal and silicon carbide single crystal prepared by same

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A modified phenolic resin was used to bond the 6H-SiC seed crystal to grow a 6H-SiC single crystal.

[0041] This embodiment implements according to the preferred embodiment in the summary of the invention:

[0042] In step (1), the resin adopts the phenolic resin modified by salicylaldehyde and Resorcinarenes calixarene;

[0043] In step (2), the seed crystal adopts 6H-SiC on the (0001) Si surface;

[0044]In step (3), heat to 180°C for heat curing, and form a highly cross-linked three-dimensional network resin structure after curing, which can firmly and densely bond the 6H-SiC seed crystal and the seed crystal frame together;

[0045] In step (6), in an argon atmosphere, heat up at a certain heating rate (generally less than 10°C / h), gradually heat to 1200°C, slowly pyrolyze and carbonize, and the residual carbon rate of the resin is 73%;

[0046] In step (7), put the carbonized and bonded 6H-SiC seed crystal and the seed crystal frame into the graphite crucible fi...

Embodiment 2

[0049] A modified furfuryl ketone resin was used to bond 4H-SiC seed crystals to grow 4H-SiC single crystals.

[0050] This embodiment implements according to the preferred embodiment in the summary of the invention:

[0051] In step (1), resin adopts the modified furfuryl ketone resin formed by condensation of cyclohexanone, urea, formaldehyde and furfuryl alcohol, the first step is the synthesis of ketone aldehyde resin, the second step is the synthesis of pulse aldehyde resin, the third step It is the polycondensation of furfurone resin to obtain modified furfurone resin;

[0052] In step (2), the seed crystal adopts 4H-SiC with a carbon surface of (0001);

[0053] In step (3), heat to 150°C for heat curing, and form a highly cross-linked three-dimensional network resin structure after curing, which can firmly and densely bond the 4H-SiC seed crystal and the seed crystal frame together;

[0054] In step (6), in a nitrogen atmosphere, heat up at a certain heating rate (gen...

Embodiment 3

[0058] A modified epoxy resin was used to bond the 15R-SiC seed crystal to grow a 15R-SiC single crystal.

[0059] This embodiment implements according to the preferred embodiment in the summary of the invention:

[0060] In step (1), resin adopts the epoxy resin modified with cyanate ester;

[0061] In step (2), the seed crystal is 15R-SiC with (0001) silicon surface;

[0062] In step (3), heat to 250°C for heat curing, and form a highly cross-linked three-dimensional network resin structure after curing, which can firmly and densely bond the 15R-SiC seed crystal and the seed crystal frame together;

[0063] In step (6), in a nitrogen atmosphere, the temperature is raised at a certain heating rate (generally less than 7°C / h), gradually heated to 800°C, slowly pyrolyzed and carbonized, and the residual carbon rate of the resin is 65%;

[0064] In step (7), put the carbonized and bonded 15R-SiC seed crystal and the seed crystal frame into the graphite crucible filled with raw...

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Abstract

The invention relates to a method for preparing a high-quality large silicon carbide single crystal and a silicon carbide single crystal prepared by the method. The method comprises the following steps: placing a seed crystal on a seed crystal frame coated with a carbon-enriched polymer and heating so that the carbon-enriched polymer is thermocured; heating in an inert atmosphere so that the carbon-enriched polymer is pyrolyzed and carbonized; and growing the silicon carbide crystal on the carbonized and bonded seed crystal by a seed crystal guide gas phase transport technology (PVT). The seed crystal and the seed crystal frame are tightly bonded by the carbon-enriched polymer and pyrolyzed and carbonized after being cured to form a dense middle carbon layer, thereby effectively improvingthe temperature field uniformity of the silicon carbide seed crystal and solving the problems of polycrystals, multinuclear intergrowth, multiform mixture, and the like caused by uneven temperature distribution; the growing silicon carbide crystal has a single crystal form, the size of the crystal is larger than 2 inches, and the n-type or p-type mixed silicon carbide crystal can be prepared by mixing impurities in the growing process of the seed crystal.

Description

technical field [0001] The invention relates to the technical field of wide bandgap semiconductor wafer preparation, in particular to a method for preparing a high-quality large silicon carbide single crystal and a silicon carbide single crystal prepared by the method. Background technique [0002] Silicon carbide (SiC) is one of the cores of the third-generation semiconductor materials. It not only has the advantages of large band gap, high thermal conductivity, high carrier saturation migration velocity, and high critical breakdown electric field strength, but also has excellent Chemical stability, very suitable for making electronic devices with high temperature, high frequency, radiation resistance, high power and high density integration. Due to its important strategic position in national defense and military affairs, SiC materials are highly valued by various countries. At present, a variety of SiC-based microelectronic devices have come out and are used in aerospace...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/36
Inventor 严成锋陈之战施尔畏肖兵陈义
Owner 安徽微芯长江半导体材料有限公司
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