In-situ combination abrasive particle copper polishing composition

A polishing composition and composition technology, applied in the field of in-situ combined abrasive copper polishing composition and chemical mechanical polishing composition, can solve the problems of soft copper surface scratches, high hardness of inorganic particles, and decreased polishing rate. Achieve the effect of reducing surface scratches, reducing scratches, and high cost performance

Inactive Publication Date: 2011-08-03
TSINGHUA UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, copper polishing liquids, such as patents US2002/0106897A1, US2007/0043230A1, US2008/0119052A1, WO2009/048203A1, all use inorganic metal oxide abrasive particles (aluminum oxide, silicon oxide, etc.), which better solve the planarization of copper wiring However, due to the high hardness of inorganic particles, it is easy to produce scratches on the surface

Method used

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  • In-situ combination abrasive particle copper polishing composition
  • In-situ combination abrasive particle copper polishing composition
  • In-situ combination abrasive particle copper polishing composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Prepare 700g of polishing liquid: take 7g of aminoacetic acid, add it into deionized water under stirring, add 0.07g of benzotriazole, 0.35g of maleic acid, 0.35g of sodium sulfate of fatty alcohol polyoxyethylene ether, and 0.14g of peroxal, Stir 1.4g of sodium fluoride until clarification, then add 14g of silica sol (30wt% silicon dioxide content, average particle size of 50nm) and 14g of hydrogen peroxide and stir until uniform, weigh to 700g with deionized water, adjust the polishing with phosphoric acid The pH value of the solution is 4.2. With the IC 1000-XY / SUBA IV20 type composite polishing pad of Rodel Company, through the CETRCP4 polishing test machine, under the conditions of polishing pressure 4psi, polishing relative motion speed 1m / s, and polishing liquid flow rate 70mL / min, the polishing test was carried out. Measure the change of wafer quality before and after polishing, and then consider the density and area of ​​the wafer to obtain the polishing rate o...

Embodiment 2

[0028] Preparation of 700g polishing liquid: take 7g glutamic acid, add deionized water under stirring, add 0.07g methyl benzotriazole, 0.35g diethyl maleate, 0.35g fatty alcohol polyoxyethylene ether sodium sulfate, 0.14g of Bioxad, 1.4g of sodium fluoride were stirred until clarified, then 4.2g of polystyrene particles (average particle size of 100nm) and 14g of urea hydrogen peroxide were added and stirred until uniform, and the weight was determined to 700g with deionized water, and Phosphoric acid adjusts the pH of the polishing solution to 4.2. Using the IC 1000-XY / SUBA IV20 type composite polishing pad of Rodel Company, through the CETR CP4 polishing test machine, under the conditions of polishing pressure 4psi, polishing relative motion speed 1m / s, and polishing liquid flow rate 70mL / min, the polishing test was carried out. By measuring the quality change of the wafer before and after polishing, and then considering the density and area of ​​the wafer, the polishing ra...

Embodiment 3

[0030]Prepare 700g of polishing liquid: take 7g of serine, add it to deionized water under stirring, and add 0.07g of benzotriazole, 0.35g of dioctyl maleate, 0.35g of fatty alcohol polyoxyethylene ether sodium sulfate, and 0.14g of basil Obtained, 1.4g sodium fluoride was stirred until clarification, then added 4.2g polymethyl methacrylate particles (average particle diameter is 100nm) and 14g hydrogen peroxide and stirred until uniform, fixed weight to 700g with deionized water, adjusted with phosphoric acid The pH of the polishing solution is 4.2. With the IC 1000-XY / SUBA IV20 type composite polishing pad of Rodel Company, through the CETRCP4 polishing test machine, under the conditions of polishing pressure 4psi, polishing relative motion speed 1m / s, and polishing liquid flow rate 70mL / min, the polishing test was carried out. Measure the change of wafer quality before and after polishing, and then consider the density and area of ​​the wafer to obtain the polishing rate of...

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Abstract

The invention discloses an in-situ combination abrasive particle copper polishing composition, belonging to the technical field of micro-electronic auxiliary materials and ultra-precision machining process. The composition comprises deionized water, organic-inorganic in-situ combination abrasive particles, an oxidizing agent, a complexing agent, a corrosion inhibitor, a PH conditioning agent, an interface reaction addition agent, a surface active agent, bactericide and a polishing accelerating agent, wherein the organic-inorganic in-situ combination abrasive particles are nuclear shell structure combination abrasive particles which are formed in situ and take organic particles as cores and inorganic particles as surface coating layer. The chemically mechanical polishing composition can form in situ the nuclear shell structure combination abrasive particles which take organic particles as cores and inorganic particles as surface coating layers under the synergistic effect of long rang and short range surface acting forces, and realizes the polishing process of high removal, low scratching and high surface accuracy of metal surfaces in the condition of grinding particles with lower concentration.

Description

technical field [0001] The invention relates to a chemical mechanical polishing composition, in particular to an in-situ combined abrasive grain copper polishing composition, and belongs to the technical field of microelectronic auxiliary materials and ultra-precision processing technology. Background technique [0002] With the continuous development of microelectronics technology, the feature size of integrated circuits is continuously reduced, and the proportion of interconnection delay in the total delay is increasing, and gradually develops into the main delay factor. An important means to reduce the interconnection delay is to reduce the resistivity of the interconnection metal and enhance the anti-electromigration properties of the interconnection metal. Compared with traditional aluminum wiring, copper wiring has smaller resistivity and stronger anti-electromigration characteristics, which can well solve the device reliability problem caused by interconnection delay....

Claims

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Application Information

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IPC IPC(8): C09G1/02
Inventor 潘国顺王宁龚剑锋雒建斌路新春刘岩
Owner TSINGHUA UNIV
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