Method for preparing copper indium gallium selenide solar cell optical absorption layer

A solar cell, copper indium gallium selenide technology, applied in the direction of circuits, electrical components, final product manufacturing, etc., can solve the problems affecting the large-scale production of CIGS, complex equipment, difficult high temperature and high pressure, etc., to achieve environmental protection and large-scale production. , The effect of simple equipment structure and high production efficiency

Inactive Publication Date: 2014-07-30
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]IBM company uses solution method to prepare CIGS solution with hydrazine (NH2NH2) as solvent and spin coating The conversion efficiency of CIGS solar cells prepared by film formation and heat treatment ("Thin Solid Films" 2009, No. 517, 2158–2162) exceeds 10%, but NH2NH2 It is a highly volatile and highly toxic solvent, which limits the large-scale promotion of this method
Kvapur et al. ("Thin Solid Films" 2003, No. 431–432, 53–57) used metal oxides as precursors, selenized in hydrogen sulfide (H2Se) after hydrogen reduction The conversion efficiency of CIGS solar cells reaches 13.6%, but H2Se is an expensive and highly toxic volatile gas, which has extremely strict requirements for storage and use, which seriously affects the performance of CIGS. mass production
In addition, it is also possible to prepare CIGS solar cell devices by using the organic liquid phase solvothermal method to prepare CIGS nanoparticles and then form a film and selenize them. In this method, the preparation of CIGS nanoparticles requires a high-pressure reactor ("Thin Solid Films" 2005, No. 480-481, 46-49) or Schlenk's complex reaction device ("Journal of the American Chemical Society" 2008, Vol. 130, No. 49, 16770-16777), complex equipment, high temperature and high pressure are difficult to control, thus limiting the method for large-scale production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] (1) According to the molecular formula CuInSe 2 The mol ratio of Cu, In and Se in weighs 2.060g of cuprous selenide (Cu 2 Se) and 4.663g of indium selenide (In 2 Se 3 ) were mixed and placed in a ball mill jar for ball milling for 8 hours to prepare a chalcopyrite-type CuInSe with a particle size of 10nm-5000nm 2 Nanoparticles;

[0019] (2) The prepared CuInSe 2 Nanoparticles are dispersed in 70 ml of dispersant ethylene glycol and 0.1 g of film-forming agent vinyl cellulose, 2 ml of terpineol, 0.01 g of polyoxypropylene ether, and 0.01 g of polyurethane-modified butadiene resin. In the composed solvent, CuInSe is dispersed by mechanical stirring to form a uniform and stable CuInSe with suitable viscosity 2 Precursor slurry;

[0020] (3) The prepared CuInSe 2 The precursor slurry was sprayed onto the cleaned silicon wafer, then placed on a preheated electric furnace, and dried to remove the dispersant and film-forming agent. The drying time was 5 min, and the tem...

Embodiment 2

[0024] (1) According to the molecular formula CuIn 0.5 Ga 0.5 Se 2 The molar ratio of Cu, In, Ga and Se in the medium weighs 2.060 g of Cu 2 Se, 2.332 g of In 2 Se 3 , 1.882 g of Gallium Selenide (Ga 2 Se 3 ) were mixed and placed in a ball mill jar for 12 hours to prepare CuIn with a particle size of 10 nm-5000 nm 0.5 Ga 0.5 Se 2 Nanoparticles;

[0025] (2) The prepared CuIn 0.5 Ga 0.5 Se 2The nano powder is dispersed in a mixed solvent consisting of 90 ml of dispersant methanol and film-forming agent 0.02g butadiene resin, 0.2g methylcellulose, 0.1g polyvinyl alcohol, 0.01g EDTA, and 0.01g polyethylene. , a uniform and stable CuIn with suitable viscosity is formed after magnetic stirring. 0.5 Ga 0.5 Se 2 precursor slurry;

[0026] (3) The prepared CuIn 0.5 Ga 0.5 Se 2 The precursor slurry was scraped onto the cleaned borosilicate glass sheet, then placed on a preheated electric furnace, dried to remove the dispersant and film-forming agent, the drying time...

Embodiment 3

[0030] (1) According to the molecular formula CuIn 0.7 Ga 0.3 Se 2 In the molar ratio of Cu, In, Ga and Se, weigh 2.060g of Cu 2 Se, 3.264g of In 2 Se 3 , 1.129g of Ga 2 Se 3 After mixing, it was placed in a ball mill for 6 hours to prepare CuIn with a particle size of 50 nm to 5000 nm. 0.7 Ga 0.3 Se 2 Nanoparticles;

[0031] (2) The prepared CuIn 0.7 Ga 0.3 Se 2 The nano powder is dispersed in 100 ml of dispersant absolute ethanol and film-forming agent 0.3g terpineol, 0.01g ethyl cellulose, 0.02g EDTA, 0.01g polyoxypropylene ether, 0.01g polyurethane modified butadiene fiber. In the mixed solvent of 0.7 Ga 0.3 Se 2 precursor slurry;

[0032] (3) The prepared CuIn 0.7 Ga 0.3 Se 2 The precursor slurry was spin-coated on the cleaned soda-lime glass sheet, then placed on a pre-heated electric furnace, heat-treated to remove the dispersant and film-forming agent, the drying time was 3 minutes, the temperature was 300 °C, and 4 microns were prepared. thick CuIn...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to a preparation technology of a thin-film solar cell, in particular to a preparation method of a copper indium gallium selenide light absorbing layer. The preparation process is (1) mix metal copper, indium, gallium selenide or metal copper, indium, gallium and selenium according to the stoichiometric ratio, mix and stir evenly, and then ball mill to obtain copper indium gallium selenide nanometer with a particle size of 10-10000nm Particles; wherein the atomic molar ratio of Cu:In:Ga:Se is 0.9-1:0-1:0-1:2; (2) Disperse copper indium gallium selenide nanoparticles in a mixture composed of a dispersant and a film-forming agent solution, stirring or grinding or ultrasonic or magnetic stirring to disperse to obtain CIGS precursor slurry; (3) coating the precursor slurry on the substrate, drying in the air atmosphere to remove the dispersant and film-forming agent, to obtain Precursor thin film; (4) rapid heating and heat treatment of the precursor thin film in an inert atmosphere to obtain a finished copper indium gallium selenium solar cell light absorption layer thin film. The method simplifies the technological process, has high production efficiency, is beneficial to environmental protection, and broadens the thinking for the large-scale industrialization of CIGS-based thin film solar cells.

Description

technical field [0001] The invention relates to a preparation method of a thin-film solar cell in the field of new energy, in particular to a preparation method of a copper indium gallium selenide light absorbing layer in the solar cell. Background technique [0002] Energy shortage and environmental pollution are major issues facing the 21st century. The development of clean and environmentally friendly new energy to replace traditional fossil energy has become one of the effective scientific ways to solve these problems. Among them, as an inexhaustible, inexhaustible, environmentally friendly and pollution-free renewable energy, solar energy is ubiquitous, making solar photovoltaic power generation an important part of the development of new energy. At present, silicon solar cells, the most mature technology in the market, are limited in their development as the most ideal solar energy materials due to the characteristics of high pollution, high energy consumption, high c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 刘英孔德义尤晖赵聪陈池来林新华高理升王焕钦李加伟
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap