Preparation method of CIGS-sulfur thin-film light absorption layer with sulphur-enriched surface

Abstract

The invention, which is suitable for the technical field of the photovoltaic material, provides a preparation method of a CIGS-sulfur thin-film light absorption layer with a sulphur-enriched surface. Nitrates of copper, indium, and gallium, and selenium powders are used raw materials and are fixed with oleylamine, and reaction is carried out at the temperature between 220 DEG C and 300 DEG C to generate CIGS nano particles; the obtained CIGS nano particles are dispersed into a benzene solvent or a hexanethiol solvent so as to form a stable colloidal solution; a Mo-plated soda-lime glass base body is coated with the CIGS nano particle colloidal solution by a physical method, thereby forming precursor prefabricated membrane; and annealing processing and sulfidizing are successively carried out on the CIGS precursor prefabricated membrane, and then a CIGS-sulfur thin-film light absorption layer with a sulphur-enriched surface of a solar cell is formed. According to the preparation method, the composition and the energy band structure of the CIGS-sulfur thin film surface are changed, thereby improving the light absorption and utilization by the CIGS-sulfur thin film. Moreover, the preparation process is simple; the equipment investment is low; the cost is low; the efficiency is low; and an environment-friendly effect is realized.

Description

Technical field [0001] The invention belongs to the technical field of photovoltaic new energy materials, and in particular relates to a method for preparing a sulfur-rich copper indium gallium selenide thin film light absorption layer. Background technique [0002] With the development of industry and population growth, non-renewable energy sources such as coal, oil, and natural gas have been excessively consumed, which has led to energy shortages. Therefore, people began to pay attention to renewable energy such as wind energy, geothermal energy, day and night energy, and solar energy. Among them, solar energy has the advantages of large energy, inexhaustible, clean and pollution-free, and has become the most promising energy source. There are two main forms of utilization of solar energy: thermal energy and electrical energy, such as solar water heaters and solar cells. [0003] Solar cells have become the focus of people's research due to their wide range of uses, convenient ...

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Problems solved by technology

Vacuum co-evaporation method is currently the most widely used method for preparing CIGS thin films. The thin films prepared by it have high purity, smooth surface, excellent compactness, and the highest photoelectric conversion rate, which has reached 20.3%. However, this method has disadvantages It is an instrument and equipment that requires high vacuum. It has high investment cost, high energy consumption, poor uniformity of preparing large-area thin films, and it is difficult to achieve large-scale production.

In the process of preparing CIGS thin films by electrochemical deposition, due to the difficulty in matching the deposition potentials of copper, indium, gallium, and selenium, the stoichiometric ratio of the thin films is difficult to control, and the composition of impurity phases is high, so the thin film is compact and adherent. very bad

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