Saturable absorption device based on silicon quantum dot thin film and application thereof in fiber pulse laser device
A saturable absorption, silicon quantum dot technology, used in nonlinear optics and laser fields, can solve the problems of expensive manufacturing and integration, slow response time, short operable wavelength, etc., to achieve optimized performance, reduced signal light loss, improved The effect of output efficiency
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Embodiment 1
[0023] The signal light is transmitted to structures with different core diameters through the silicon quantum dot film, such as figure 1 shown. Making silicon quantum dots with high third-order nonlinear coefficients into nc-Si films or nc-Si / SiO 2 The thin film is embedded, and the thin film is placed between single-mode or multi-mode optical fibers with specific mode field parameters to form a saturable absorbing device. Under the action of the incident strong laser electric field, as the light intensity increases, the refractive index of the thin film material increases, so that the outer edge of the laser beam will be deflected toward the center; using the self-focusing effect of the material, by increasing the optical fiber at the receiving end of the signal core diameter, when the incident light intensity is weak, when the receiving signal end is connected to the large core diameter fiber 13, the signal light transmission loss is lower than the small core diameter fibe...
Embodiment 2
[0027] The pump source 1 can be a semiconductor laser diode whose center wavelength is the first wavelength value; the pump isolator 2 is used to protect the pump light source; the pump coupler 3 is used to guide the input light into the ring cavity, and a wave Division multiplexing coupler or circulator; gain medium 4, used to convert the pumping light of the first wavelength value into laser light with the second wavelength value, the gain medium 4 is a doped optical fiber, and its doping ions include neodymium and ytterbium One or more of praseodymium, erbium, and its fiber matrix can include quartz, silicate, phosphate, tellurate, fluoride; the structure of the gain fiber 4 can be a single-clad structure or a double-clad structure; isolation A device 5 is used to ensure the unidirectionality of laser transmission in the ring cavity; a silicon quantum dot thin film saturable absorber 6 is used to control the output mode of the output mode-locked pulsed laser or Q-switched pu...
Embodiment 3
[0033] The pump source 1 can be a semiconductor laser diode whose center wavelength is the first wavelength value; the pump isolator 2 is used to protect the pump light source; the pump coupler 3 is used to guide the input light into the linear cavity, which can be selected A wavelength division multiplexing coupler; a total reflection mirror 8 or a total reflection Bragg grating 10, which is used as an end mirror on one side of the laser linear cavity; a gain medium 4, which is used to convert the pump light with the first wavelength value into a pump light with a second wavelength value Laser wavelength value, the gain medium 4 is a doped fiber, its dopant ions include one or more of neodymium, ytterbium, praseodymium, and erbium, and its fiber matrix can include quartz, silicate, phosphate, tellurate , fluoride; the gain fiber structure can be a single-clad structure or a double-clad structure; a silicon quantum dot thin film saturable absorber device 6 is used to control th...
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