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Diester acid protection structure monomer and preparation method thereof

A technology of protective structure and diester acid, which is applied in the field of optical materials, can solve the problems of molecular weight affecting photoresist viscosity, high film hardness, poor adhesion and film formation, etc., to improve the efficiency of deprotection reaction, high yield and purity , the effect of improving performance

Inactive Publication Date: 2019-12-20
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0003] Currently used film-forming resins are mainly divided into three categories: 1. (meth)acrylate polymers; 2. cycloolefin-maleic anhydride copolymers; 3. norbornene polymers, in which (meth)acrylate polymers However, due to the lack of its monomer structure, the prepared photoresist has various defects, which ultimately affect the performance of photolithography products, such as the low purity of the monomer, and the rigid structure of the monomer leads to the film High hardness and brittleness, the molecular weight of the monomer affects the viscosity of the photoresist, which leads to poor adhesion and film formation, and the acid-sensitive group defects of the monomer lead to poor corrosion resistance of the photoresist, etc. These defects can only be passed through Continuously improve the monomer structure of film-forming resin to solve

Method used

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  • Diester acid protection structure monomer and preparation method thereof
  • Diester acid protection structure monomer and preparation method thereof
  • Diester acid protection structure monomer and preparation method thereof

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preparation example Construction

[0033] The invention provides a preparation method of the diester acid protection structure monomer, comprising the steps of:

[0034] S1: Mix haloalkane, cyclic ketone, and reaction solvent to obtain preparatory solution I; under protective gas, take lithium pellets and add them to the reaction solvent to obtain preparatory solution II;

[0035] S2: Add the preparatory solution I mentioned in S1 dropwise to the preparatory solution II, and the reaction temperature is 30-60° C. to obtain the reaction solution I;

[0036] S3: Pour the reaction solution I described in S2 into the acid, and obtain an alkyl-containing ring alcohol intermediate through stirring, separation, and distillation;

[0037] S4: adding acrylic acid monomers and lactic acid monomers into the reaction solvent, and distilling after reaction to obtain acrylic acid lactic acid esters;

[0038] S5: under a protective gas, mix the alkyl-containing cyclic alcohol intermediate described in S3 with the acrylic lact...

Embodiment 1

[0077] Embodiment 1 provides a kind of diester acid protection structure monomer, its chemical structural formula is as shown in formula II:

[0078]

[0079] The preparation of the diester acid protection structure monomer comprises the following steps:

[0080] S1: Weigh 100g of cyclopentanone and 253.5g of methyl iodide into 500g of tetrahydrofuran, mix to obtain the preparatory solution I, put it in a constant pressure dropping funnel, and the internal temperature is 20°C; weigh 19.2g of lithium particles, 50g of tetrahydrofuran in Put it in a 2L three-neck flask and protect it with dry nitrogen to obtain the preparation solution II.

[0081] S2: Add 5mL of preparatory solution Ⅰ to preparatory solution Ⅱ to trigger the reaction, release a lot of heat, the internal temperature of the solution rises to 60°C, the solution turns gray and a lot of white smoke comes out, when the internal temperature drops to 40°C, turn on Stir, and continue to add the preparatory solution ...

Embodiment 2

[0087] Embodiment 2 provides a kind of diester acid protection structure monomer, its chemical structural formula is shown in formula III:

[0088]

[0089] The preparation of the diester acid protection structure monomer comprises the following steps:

[0090] S1: Weigh 100g of cyclopentanone and 278.6g of iodoethane into 500g of tetrahydrofuran, mix to obtain the preparatory solution I, put it in a constant pressure dropping funnel, and the internal temperature is 20°C; weigh 19.2g of lithium particles, 50g of tetrahydrofuran Put it in a 2L three-neck flask and protect it with dry nitrogen to obtain the preparatory solution II.

[0091]S2: Add 5mL of preparatory solution Ⅰ to preparatory solution Ⅱ to trigger the reaction, release a lot of heat, the internal temperature of the solution rises to 60°C, the solution turns gray and a lot of white smoke comes out, when the internal temperature drops to 40°C, turn on Stir, and continue to add the preparatory solution I dropwis...

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Abstract

The invention relates to the field of optical materials and in particular to a diester acid protection structure monomer and a preparation method thereof. The diester acid protection structure monomeris used as a raw material of a photoresist required in integrated circuit manufacturing. Due to a diester long side chain, the photoresist has a better film-forming property; due to the fact that small-size and high-acid-sensitivity groups hung outside can improve the deprotection reaction efficiency in the photoetching process, the quality of a photoetched product is improved; and in addition, the diester acid protection structure monomer prepared through the process method has high yield and purity, and the performance of the photoresist is further guaranteed.

Description

technical field [0001] The invention relates to the field of optical materials, in particular to a diester acid protective structure monomer and a preparation method thereof. Background technique [0002] Photoresist is a photosensitive polymer material with high sensitivity to light and radiation. It is mainly used in the micrographic processing of integrated circuits and semiconductor discrete devices, and the production of flat panel displays in the field of optoelectronics. With the continuous development of electronic devices in the direction of high integration and high speed, the role of photoresist is becoming more and more important. Photoresists are generally composed of film-forming resins, photosensitizers, solvents and additives, among which film-forming resins are one of the important components of photoresists and play a decisive role in the performance of photoresists. [0003] Currently used film-forming resins are mainly divided into three categories: 1. (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C69/708C07C67/08C07C67/54C07C29/38C07C35/06C07C69/54G03F7/027
CPCC07C29/38C07C67/08C07C67/54C07C69/708C07C2601/08G03F7/027C07C35/06C07C69/54
Inventor 许东升马潇周浩杰顾大公毛智彪许从应
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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